fp50n06
Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LE,
RF1S50N06LESM
O-247
175oC
RF1S50N06LESM
fp50n06
F50N06LE
FP50N06L
FG50N06L
RF1S50N06LE
RF1S50N06LESM9A
RFG50N06LE
RFP50N06LE
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fp50n06
Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process
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Original
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PDF
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
fp50n06
c 4072
TA49164
F50N06LE
FG50N06L
FP50N06L
RF1S50N06LESM
RF1S50N06LESM9A
RFG50N06LE
RFP50N06LE
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fp50n06
Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process
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Original
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PDF
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
fp50n06
50n06l
50N06LE
F50N06LE
FG50N06L
FP50N06L
RF1S50N06LESM
RF1S50N06LESM9A
RFG50N06LE
RFP50N06LE
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50n06l
Abstract: No abstract text available
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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Original
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PDF
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
TA49164.
Cu94e-5)
50e-4
53e-6)
54e-3
21e-6)
50n06l
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50N06LE
Abstract: No abstract text available
Text: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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PDF
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
TA49164.
022i2
50e-4
53e-6)
54e-3
21e-6)
50N06LE
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fp50n06
Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE
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OCR Scan
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PDF
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RFG50N06LE.
RFP50N06LE,
RF1S50N06LE,
RF1S50N06LESM
O-247
022i2
RFG50N06LE,
RF1S50N06LESM
fp50n06
F50N06LE
50N06LE
rfp50n06
T0-262AA
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FP50N06L
Abstract: fp50n06 F50N06LE FG50N06L F50n06l RFPS0N06
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM interrii D ata S heet O cto b er 1999 File N u m b e r 4 0 7 2 .3 Features 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs • 5 0 A ,6 0 V These N-Channel enhancem ent mode power M O S F E Ts are manufactured using the latest manufacturing process
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OCR Scan
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PDF
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
TA49164.
RF1S50N06LESM
AN7254
AN7260.
FP50N06L
fp50n06
F50N06LE
FG50N06L
F50n06l
RFPS0N06
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