IRF350
Abstract: IRF350 and its equivalent TB334 TA9399
Text: IRF350 Data Sheet March 1999 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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IRF350
TA9399.
IRF350
IRF350 and its equivalent
TB334
TA9399
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RFH12N35
Abstract: RFH12N40 RFM12N35 RFM12N40 RFH12N
Text: Gl De J BÛ7SGÔ1 O O l ö l t i l 0 3875081 G E SOLID STATE 01E Standard Power MOSFETs 18161 _ File Number 1630 RFH12N35, RFH12N40 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM
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RFH12N35,
RFH12N40
RFH12N35
RFH12N40*
7SD01
RFM12N35,
RFM12N40
9ZCS-57236
RFH12N40
RFM12N35
RFM12N40
RFH12N
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RFM12N40
Abstract: RFM12 B RFM12N35
Text: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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RFM12N35,
RFM12N40
RFM12N35
RFM12N40*
AN-7254
AN-7260.
92cs-37236
92cs-37237
92cs-37238
92cs-37239
RFM12N40
RFM12 B
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IRF350
Abstract: No abstract text available
Text: IRF350, IRF351, IRF352, IRF353 S e m iconductor October 1998 Data Sheet 13A and 15A, 350V and 400V, 0.300 and 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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IRF350,
IRF351,
IRF352,
IRF353
IRF350
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