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    TA9404 Search Results

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    TA9404 Price and Stock

    KEMET Corporation C410C272K5R5TA9404

    2700PF 50.0V
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    DigiKey C410C272K5R5TA9404 Reel 4,000
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    KEMET Corporation C410C473K5R5TA9404

    .047UF 50.0V
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    DigiKey C410C473K5R5TA9404 Reel 4,000
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    KEMET Corporation C410C223K5R5TA9404

    .022UF 50.0V
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    DigiKey C410C223K5R5TA9404 Reel 4,000
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    KEMET Corporation C410C152K5R5TA9404

    1500PF 50.0V
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    DigiKey C410C152K5R5TA9404 Reel 4,000
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    KEMET Corporation C410C333K5R5TA9404

    .033UF 50.0V
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    DigiKey C410C333K5R5TA9404 Reel 4,000
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    TA9404 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFM10P12

    Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
    Text: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching


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    PDF RFP10P15 -150V, -150V TA9404. RFM10P12 RFM10P15 TA940 RFP10P12 RFP10P15 TB334

    RCA 467

    Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
    Text: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •


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    PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V RFM10P12 RFM10P15 RFP10P12 RFP10P15* 2CS-992T3 RCA 467 TA9405 transistor RCA 467 TA9404 TA940 92CS-38272 RFP10P15

    RFM10P12

    Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
    Text: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode


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    PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V and-150 RFM10P12 RFM10P15 RFP10P12 RFP10P15* RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233

    74ti

    Abstract: 68CKT
    Text: I.40±.05 l.2T±.05 68TH CIRCUIT r 35TH CIRCUIT­ ILO *.05 NOTES 1 MATERIAL HOUSING:HIGH TEMP. PLASTIC. WHITE PIN ; COPPER ALLOY 2 ) PLATING CONTACT AREA:5ELECTIVE GOLD.THICKNESS=0.1 MICROMETER MIN. OVER PALLADIUM-NICKEL SOLDER TAIL AREA: TIN-LEAD, THICKNESS^ 1.0 MICROMETER MIN.


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    PDF P5-89074 74TI-I TA94-I43 TA94-040 97092C 940B25 SDA-89147-« 74ti 68CKT

    Untitled

    Abstract: No abstract text available
    Text: -F IR S T C IR C U IT ^ 34TH NOTES C IR C U IT l.4 0 ± .0 5 1 M A T E R I A L H O U S IN G ; H IG H P IN T E M P . P L A S T I C , W H IT E ; CO PPER ALLO Y 2 ) P L A T IN G C O N TA CT A R E A :S E L E C T IV E O VER P A L L A D IU M -N IC K E L SOLD ER


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    PDF T98-074 TA94-M3 TA94-040 SDA-89147-«

    Untitled

    Abstract: No abstract text available
    Text: MATERIAL 8 HOUSING - PPS.U L 94V-0 . COLOR : BROWN TERMINAL - PHOSPHOR BRONZE. FINISH - GOLD FLASH IN CONTACT AREA. I.52um/60uln MIN. TIN IN SOLOER TAIL, BOTH OVER 0.76um/ 30uln MIN. NICKEL OVERALL. 1 - 0.25um /l0uln MIN. GOLD IN CONTACT AREA, l.52um/60uln M[N. TIN IN SOLDER TAIL. BOTH OVER


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    PDF 88SL0T 52um/60uln 30uln 25um/l0utn 76um/30uln

    Untitled

    Abstract: No abstract text available
    Text: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V -150V, and-150V TA9404. AN7254