Untitled
Abstract: No abstract text available
Text: FEDD51V17400J-01 Issue Date: Mar. 31, 2011 MSM51V17400J 4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400J is a 4,194,304-word 4-bit dynamic RAM fabricated in OKI SEMICONDUCTOR’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration,
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FEDD51V17400J-01
MSM51V17400J
304-Word
MSM51V17400J
26/24-pin
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Untitled
Abstract: No abstract text available
Text: FEDD51V17400J-01 Issue Date: Mar. 31, 2011 MSM51V17400J 4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400J is a 4,194,304-word 4-bit dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration, high-speed operation,
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FEDD51V17400J-01
MSM51V17400J
304-Word
MSM51V17400J
26/24-pin
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64256
Abstract: lh64256 LH64256BD 20-PIN 26-PIN
Text: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words × 4 bit The LH64256B is a 262,144 word × 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’s advanced CMOS double-level polysilicon gate technology. With its input
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LH64256B
LH64256B
20-pin
26-pin
20ZIP
ZIP020-P-0400)
20ZIP-2
64256
lh64256
LH64256BD
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IBM11M16735B
Abstract: IBM11M16735C e22441d
Text: Discontinued 8/98 - last order; 12/98 last ship IBM11M16730CB16M x 72 E13/11, 3.3V, Au. IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • Optimized for ECC applications • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • System Performance Benefits:
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IBM11M16730CB16M
E13/11,
IBM11M16735B
IBM11M16735C
168-Pin
16Mx72
104ns
IBM11M16735B
IBM11M16735C
e22441d
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74std
Abstract: aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040
Text: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C040 Product: 4 Mbit UV EPROM Organization: Technology: 512K x 8 CMOS Process: Die Size: Passivation: TS55 145.1 X 201.9 mils
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FM27C040
74std
aval PKW 1000
bytek
TAA 521
versatest 2100
elan digital systems
cmos 4000 series
FM27040
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m 9835
Abstract: trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor
Text: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C010 Product: 1 Mbit UV EPROM Organization: Technology: 128k x 8 CMOS Process: Die Size: Passivation: TS55 91.2 x 136.2 mils
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FM27C010
m 9835
trasistor
bytek
bytek Programmers
11801
aval PKW 1000
aval pkw 3000
TAA 521
TAA 521 A
fairchild reliability report transistor
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Hitachi DSA00189
Abstract: No abstract text available
Text: HB56UW873E-F 64MB Buffered EDO DRAM DIMM 8-Mword x 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M × 8 components ADJ-203-506B (Z) Rev. 2.0 ’00 6. 5 概要 HB 56 UW8 73 E は，6 4M ビット DR AM HM5 16 58 05 （TS OP パッケージ）を 9 個および 1 6 ビットラインド
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HB56UW873E-F
72-bit,
ADJ-203-506B
ns/60
HB56UW873E-5F
HB56UW873E-6F
168-pin
Hitachi DSA00189
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CI 2272 AN
Abstract: No abstract text available
Text: SMART SM5643240UUN4GU Modular Technologies July 24, 1997 256MByte 32M x 64 DRAM Module - 16Mx4 based 168-pin DIMM, Non-Buffered Features Part Numbers • • • • • • • • • • • SM56432400UNUGU SM56432401UNUGU SM56432408UNUGU SM56432409UNUGU
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SM5643240UUN4GU
256MByte
16Mx4
168-pin
SM56432400UNUGU
SM56432401UNUGU
SM56432408UNUGU
SM56432409UNUGU
50/60/70ns
400mil
CI 2272 AN
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Hitachi DSA00175
Abstract: No abstract text available
Text: HB56UW3272ETL-F 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 8k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADJ-203-507A (Z) Rev.1.0 ’00. 3. 15 概要 HB 56 UW3 27 2E TL は，6 4M ビット DR AMHM5 16 44 05 （TS OP パッケージ）を 3 6 個および 1 6 ビットラ
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HB56UW3272ETL-F
256MB
32-Mword
72-bit,
ADJ-203-507A
ns/60
ns/20
HB56UW3272ETL-5F
HB56UW3272ETL-6F
Hitachi DSA00175
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PDF
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bytek
Abstract: 408-730-5511 FM27C256 AVAL DATA PKW 1000 TAA 521
Text: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C256 Product : 256K bit UV EPROM Organization: Technology : 32k x 8 CMOS Process : TS-55 Die Size : 100 x 92 mils
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FM27C256
TS-55
bytek
408-730-5511
FM27C256
AVAL DATA PKW 1000
TAA 521
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HB56UW865DB-6FL
Abstract: HB56UW865DB-5FL Hitachi DSA00175 N/HB56UW865DB-F HB56UW865DB
Text: HB56UW865DB-F 64MB EDO DRAM S.O.DIMM 8-Mword x 64-bit, 4k refresh, 1 Bank Module 8 pcs of 8M × 8 components ADJ-203-508A (Z) Rev. 1.0 ’99. 12. 10 概要 HB56UW865DB は，64M ビット DRAM HM5165805 （TSOP パッケージ） を 8 個およびシリアル EEPROM
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HB56UW865DB-F
64-bit,
ADJ-203-508A
HB56UW865DB
HM5165805
ns/60
ns/15
HB56UW865DB-5F
HB56UW865DB-6F
HB56UW865DB-6FL
HB56UW865DB-5FL
Hitachi DSA00175
N/HB56UW865DB-F
HB56UW865DB
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Hitachi DSA00175
Abstract: No abstract text available
Text: HB56UW1672E-F 128MB Buffered EDO DRAM DIMM 16-Mword x 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADJ-203-510A (Z) Rev. 1.0 ’00. 3. 15 概要 HB56UW1672E は，64M ビット DRAM HM5164405 シリーズ（TSOP パッケージ）を 18 個および 16 ビ
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HB56UW1672E-F
128MB
16-Mword
72-bit,
ADJ-203-510A
HB56UW1672E
HM5164405
ns/60
ns/20
TTL166
Hitachi DSA00175
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hb56hw465db-6FL
Abstract: HB56HW465DB-5FL HB56HW465 HB56HW465DB-F Hitachi DSA0015
Text: HB56HW465DB-F 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M × 16 components ADJ-203-509A (Z) Rev. 1.0 ’99. 12. 10 概要 HB 56 HW4 65 DB は，6 4M ビット DR AM HM5 16 51 65 シリーズ（TS OP パッケージ）を 4 個および，シ
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HB56HW465DB-F
64-bit,
ADJ-203-509A
ns/60
ns/15
HB56HW465DB-5F
HB56HW465DB-6F
HB56HW465DB-5FL
HB56HW465DB-6FL
hb56hw465db-6FL
HB56HW465DB-5FL
HB56HW465
HB56HW465DB-F
Hitachi DSA0015
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4054
Abstract: CMOS 4054
Text: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High density 4 megabit and 8 megabit static RAM modules • Low profile 72-lead, gold plated SIMM Single In-line
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IDT7MPV4060
IDT7MPV4145
72-lead,
IDT7MPV4060
IDT7MPV4145
T7MPV4060
IDT7MPV4060/7MPV4145
7MPV4060
7MPV4145
4054
CMOS 4054
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Untitled
Abstract: No abstract text available
Text: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on
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SY10494-5
SY10494-6
500ps
-395mA
SY10494
65536-bit
SY10494-5CCF
C28-1
SY10494-5FCF
F28-1
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IPD42S18165-60
Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode
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16-BIT,
uPD42S18165
uPD4218165
fiPD42S18165
PD42S18165,
50-pin
42-pin
iPD42S18165-60,
PD42S18165-70,
043lg
IPD42S18165-60
tfk 014
PD42S18165
HV Tr 3
TFK 227
PD4218165
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7C192-12
Abstract: 7C192-15 7C192-20 CY7C191 CY7C192
Text: bSE SEMICONDUCTOR » SSfl'ibhE OOIOGIE 243 M C Y P CY7C191 CY7C192 PRELIMINARY r^ y p p rc q = SEMICONDUCTOR 64K x 4 Static RAM with Separate I/O Features Functional Description • H ighspeed — 1 2 ns • T ransparent write 7C191 • CMOS for optim um speed/power
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CY7C191
CY7C192
7C191)
CY7C191
CY7C192
tA\VE1151
7C192-12
7C192-15
7C192-20
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s727E
Abstract: d4216165 uPD4216165-60 tlu 011 PD4216165
Text: DATA SHEET 'J E C MOS INTEGRATED CIRCUIT /¿PD4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD4216165 is a 1 048 576 w ords by 16 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.
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uPD4216165
16-BIT,
/iPD4216165
fiPD4216165
50-pin
42-pin
cycles/64
/1PD4216165-50
uPD4216165-60
iiPD4216165-70
s727E
d4216165
tlu 011
PD4216165
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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*81c4256a
Abstract: 4256A
Text: June 1991 Edition 3.0 — — FUJITSU DATASHEET — M B 8 1 C 4 2 5 6 A -70U -80U -10L CMOS 256K x 4 BIT FAST PAGE MODE LOW POWER DRAM CMOS 262,144 x 4 Bit Fast Page Mode Low Power DRAM 1 The Fujitsu MB81C4256A is a CMOS, fully decoded dynamic RAM organized as 262,144 words x 4
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MB81C4256A
MB81C4256A-80L
MB81C4256A-10L
24-LEAD
FPT-24P-M05)
63ttt
F24021S-3C
374175b
*81c4256a
4256A
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4265165G5
Abstract: Oil 00037
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
IPD4264165-A50,
4265165-AS0
HPD4264165-A60,
426S165-A60
HPD4264165-A70,
4265165G5
Oil 00037
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PDF
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Untitled
Abstract: No abstract text available
Text: ADE-203-385A Z HN62448N Series 524,288-word x 16-bit / 1,048,576-word x 8-bit CMOS Programmable Mask ROM HITACHI T he H itach i H N 62448N is a 8-M bit CMOS Programm able Mask ROM organized either as 524,288 words by 16 bits or as 1,048,576 words by 8 bits. Realizing low power consumption, this
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ADE-203-385A
HN62448N
288-word
16-bit
576-word
62448N
HN62448NP-10
HN62448NP-12
HN62448NFB-10
HN62448NFB-12
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nec hyper
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.
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OCR Scan
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16-BIT,
uPD4216165
/zPD4216165
50-pin
42-pin
cycles/64
/iPD4216165-50
/iPD4216165-60
PD4216165-70
20too§
nec hyper
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MB81C1000
Abstract: 70/230/12L
Text: February 1990 Edition 1.0 FUJITSU DATA SHEET MB81CWOO-70U-80L/-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu M B81C1000 is a CM OS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000 has been designed for mainframe
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OCR Scan
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MB81CWOO-70U-80L/-10U-12L
B81C1000
MB81C1000
MB81C1000-70L
MB81C1000-80L
MB81C1000-10L
MB81C1000-12L
26-LEAD
C26064S-1C
70/230/12L
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