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    UPD4216165 Search Results

    UPD4216165 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPD4216165LG5-A50-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    UPD4216165LG5-A60 NEC DRAM Original PDF
    uPD4216165LG5-A60-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    UPD4216165LG5-A70 NEC DRAM Original PDF
    uPD4216165LG5-A70-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD4216165LLE-A50 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD4216165LLE-A60 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD4216165LLE-A70 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF

    UPD4216165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec A2C

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 50-pin 42-pin pPD42S16165L-A60, 4216165L-A60 /iPD42Sl6165L-A70, nec A2C

    Untitled

    Abstract: No abstract text available
    Text: pPD4216165 1M X 16-Bit Dynamic CM OS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ji/PD4216165 devices are dynam ic CM O S RAMs with an optional hyper-page mode organized as 1,048,576 words by 16 bits. A single-transistor dynam ic storage


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    PDF pPD4216165 16-Bit ji/PD4216165 42-Pin 64-ms /JPD4216165G5-70 //PD4216165G5-50-7KF JUPD4216165G5-60 /iPD4216165G5-70 //PD4216165LE-50

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 4 2 S 1 6 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD42S16165 uPD4216165 PD42S16165 PD42S16165, 50-pin 42-pin uPD42S16165-50 uPD42S16165-60 uPD42S16165-70

    nec hyper

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.


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    PDF 16-BIT, uPD4216165 /zPD4216165 50-pin 42-pin cycles/64 /iPD4216165-50 /iPD4216165-60 PD4216165-70 20too§ nec hyper

    Untitled

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT M P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ¿¿PD4216165 is a 1 048 576 words by 16 bits dynamic CMOS RAM with optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD4216165 fiPD4216165 50-pin 42-pin cycles/64 PD4216165-50 /iPD4216165-60 /iPD4216165-70 20t8os

    65G5

    Abstract: NEC 4216165-60
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165 uPD4216165 16-BIT, PD42S16165, PD42S16165 50-pin 42-pin uPD42Sl6l65-50 iuPD42S16165-60 65G5 NEC 4216165-60

    Untitled

    Abstract: No abstract text available
    Text: NEC USER'S MANUAL HOW TO USE DRAM Document No. M10339EJ3V0UMQ0 {3rd édition Date Published July 1996 P NEC Corporation 1994, 1995, 1996 Printed in Japan 1103 R a m b u s is a trad em ark o f R a m b us Inc. T h e in fo rm a tio n in th is d o c u m e n t is s u b je c t to c h a n g e w ith o u t n otice.


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    PDF M10339EJ3V0UMQ0

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.


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    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin