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    TAA 920 Price and Stock

    Renesas Electronics Corporation RAA4892042GFT#AA0

    Battery Management RAA489204 Multi-cell Li-Ion Battery Manager, 64L TQFP, 10X10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RAA4892042GFT#AA0 301
    • 1 $12.93
    • 10 $11.89
    • 100 $10.85
    • 1000 $10.84
    • 10000 $10.84
    Buy Now

    Renesas Electronics Corporation RAA4892042GFT#HA0

    Battery Management RAA489204 Multi-cell Li-Ion Battery Manager, 64L TQFP, 10X10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RAA4892042GFT#HA0
    • 1 $17.01
    • 10 $15.64
    • 100 $13.21
    • 1000 $10.77
    • 10000 $10.77
    Get Quote

    TAA 920 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TAA920 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TAA920 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    TAA 920 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sy-10

    Abstract: SY100474
    Text: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.


    Original
    PDF SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 500ps 300mA, 220mA sy-10 SY100474

    SY101422

    Abstract: No abstract text available
    Text: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.


    Original
    PDF SY10422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 500ps 250mA, 200mA 10K/100K SY101422

    SA WA

    Abstract: SY101474-4 SY100474 1024-words-by-4-bits
    Text: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.


    Original
    PDF SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 500ps 300mA, 220mA SA WA SY101474-4 SY100474 1024-words-by-4-bits

    SY101422

    Abstract: No abstract text available
    Text: SY10422-3/4/5/7 SY100422-3/4/5/7 SY10422-3/4/5/7 SY101422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.


    Original
    PDF SY10422-3/4/5/7 SY100422-3/4/5/7 SY101422-3/4/5/7 500ps 250mA, 200mA 10K/100K SY101422

    Untitled

    Abstract: No abstract text available
    Text: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns


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    PDF SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 -180mA 10K/100K SY10L/100L7101L474-7FCS F24-1 SY10L/10017101L474-7JCS J28-1 000113S

    Untitled

    Abstract: No abstract text available
    Text: * SY10494-6/7 SY100494-6/7 SY101494-6/7 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 6/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns ■ Power supply current,


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    PDF SY10494-6/7 SY100494-6/7 SY101494-6/7 SY10/100/101494 65536-bit 16384-words-by-4-bits 10K/100K C28-1 F28-1

    Untitled

    Abstract: No abstract text available
    Text: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on


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    PDF SY10494-5 SY10494-6 500ps -395mA SY10494 65536-bit SY10494-5CCF C28-1 SY10494-5FCF F28-1

    SY101L484

    Abstract: No abstract text available
    Text: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity


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    PDF TD013 QDDD07C -180m 10K/100K/ 101KECL 384-bit SY10L/10017101L484-7PCS SY10L/100L/101L484-7FCS SY10L/100L/101L484-7YCS SY10L/100L/101L484-8PCS SY101L484

    Untitled

    Abstract: No abstract text available
    Text: SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 4/5/6ns max. ■ Chip select access time, tA c: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns


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    PDF SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 500ps -350m 10K/100K SY101484-6SCF S28-1 SY101484-6MCF SY101484-6CCF

    Untitled

    Abstract: No abstract text available
    Text: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !


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    PDF IBM11S4325BP IBM11S4325BM 72-Pin 104ns 124ns

    Untitled

    Abstract: No abstract text available
    Text: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on


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    PDF SY10484-3 500ps -350mA SY10484 16384-bit C28-1 F28-1 S28-1

    Untitled

    Abstract: No abstract text available
    Text: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.


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    PDF SY10L494-7/8/10 SY100L494-7/8/10 101L494-7/8/10 -180m 10K/100K/ SY10L/100L/101L494-7PCS P28-1 F28-1 SY10L/10017101L494-7YCS SY10L/100L/101L494-7FCS

    Untitled

    Abstract: No abstract text available
    Text: IB M 11S4 3 2 0 BN IB M 11S4 3 2 0 BL 4M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 W c RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tRC Cycle Time


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    PDF 72-Pin 110ns 130ns 256ms IBM11S4320BN IBM11S4320BL 4Mx32 QDG070S

    Untitled

    Abstract: No abstract text available
    Text: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns


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    PDF SY10L494-10 SY100L494-10 SY101L494-10 -220mA 10K/100K T-10FCS F28-1 SY10L/100L7101L494-10YCS Y28-1

    Untitled

    Abstract: No abstract text available
    Text: SYNERGY SEMICON DUC TOR S7E ]> • ^001301 0000053 310 SY10494-5/6 S Y N E R G Y SEMICONDUCTOR X^ RAM SY100494-5/6 SY101494-5/6 -r-^ 6 -2 5 -1 0 DESCRIPTION FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max.


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    PDF SY10494-5/6 SY100494-5/6 SY101494-5/6 SY10/100/101494 65536-bit 16384-words-by-4-bits 10K/100K C28-1 F28-1

    Untitled

    Abstract: No abstract text available
    Text: * SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 255 x 4 ECL RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. ■ Block select access time, tAB: 2ns max. ■ Write pulse width, tww: 3ns min.


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    PDF SY10422-2 SY100422-2 SY101422-2 10K/100K

    MBT- 100K

    Abstract: No abstract text available
    Text: SYNERGY SEMI CON D U CT OR *SYNERGY S7E ]> • T0013A1 0000033 SE2 I SY10484-3.5/4/5/6 4K x 4 ECL RAM SY100484-3.5/4/5/6 SY101484-3.5/4/5/6 SEMICONDUCTOR -T -H é -Z 3 '0 8 ■ FEATURES Address access tim e, tAA: 3.5/4/5/6ns max. Chip select access tim e, tAc: 3ns max.


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    PDF T0013A1 500ps SY10484-3 SY100484-3 SY101484-3 SY10/100/101484 16384-bit 4096-words-by-4-bits 10K/100K SY100age MBT- 100K

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER * ovlnm îû î’ï ü n -1c i / „ a c m DAn/i 16K x 4 E C L R A M S t N E n G a SEMICONDUCTOR S Y100L494-7/8/10 SY101L494-7/8/10 DESCRIPTION FEATURES • Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.


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    PDF Y100L494-7/8/10 SY101L494-7/8/10 -180mA 10K/100K/ FlatSY10L/100L/101L494-7PCS P28-1 F28-1 Y28-1 SY10L/100L/101L494-8PCS

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 S 4 3 2 5 B P IB M 1 1 S 4 3 2 5 B M 4M X 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 W c RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tRC Cycle Time


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    PDF 72-Pin 104ns 124ns 128ms 50H4745 IBM11S4325BP IBM11S4325BM QQQS24fi

    MP 130B transformer

    Abstract: mp 130b power transformer MP 130B MP 130B 00 UL5085-1 UL5085 Q230VAC IAO6 Class 130B transformer mp - 130b
    Text: TAA AkJIA REV. S ta tu s REVISION 0 6 / 1 1 / 0 3 YS REVISION A ADDED RoHS & UPDATED LABELS 0 3 / 0 1 / 0 6 MP REVISION B CHG TUV FILE # WAS 8 1 0 / 8 9 E N 6 0 9 5 0 & VDE 0 5 5 1 . CLARIFIED PIN OUTS 0 4 / 2 3 / 0 7 YS REVISION C UPDATE LOGO’S TO STD IED.


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    PDF 115/230VAC 50/60Hz MP 130B transformer mp 130b power transformer MP 130B MP 130B 00 UL5085-1 UL5085 Q230VAC IAO6 Class 130B transformer mp - 130b

    Untitled

    Abstract: No abstract text available
    Text: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and


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    PDF SY10422-4 SY10422 1024-bit 256words-by-4 SY10422-3DCF D24-1 F24-1 SY10422-4DCF

    A1312

    Abstract: tba810s st TAA630S TBA510 TBA520 TBA970 A3065 double channel double balanced demodulators IF am VIDEO DEMODULATOR synchronous color killer circuits block diagram
    Text: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Am p. Lim. Detector //A 3065 Video Amplifier T BA 970 Chrom a Processing N T S C AiA746 , n A 780, M 781, /uA787 , M 788 Chrom a Processing P A L TAA 630 S, T BA 510 , T B A 520, T B A 540 , T B A 560 C, TBA 990


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    PDF //A3064 //A3065 TBA970 //A746, //A780, //A781, //A787, //A788 TAA630S, TBA510, A1312 tba810s st TAA630S TBA510 TBA520 TBA970 A3065 double channel double balanced demodulators IF am VIDEO DEMODULATOR synchronous color killer circuits block diagram

    cea 141

    Abstract: A5A 103 A5A 101 D4047
    Text: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •


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    PDF 64-bit 32/64/128K A4-16 D32-39 256/512/1024KB D08-15 D16-23 cea 141 A5A 103 A5A 101 D4047

    Untitled

    Abstract: No abstract text available
    Text: « S Y 1 0422-3/4/5/7 SY1 00422-3/4/5/7 S Y 101422-3/4/5/7 S Y101 M 422-5/7 256 x 4 ECL RAM SYNERGY S E M IC O N D U C T O R F E A TU R E S D E S C R IP TIO N Address access time, 3/4/5/7ns max. tAA: Block select access time, tAB: 2ns max. Write pulse width, tww: 3ns min.


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    PDF 500ps -200mA 10K/100K Sel100/101422-5DCS SY10/100/101422-5FCS SY10/100/101422-5JCS SY10/100/101422-5JCSTR SY10/100/101422-5PCS 101M422-5DCS SY101M422-5PCS