TRANSISTOR mcr 100-8
Abstract: No abstract text available
Text: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault
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MC33389
MC33389
100mA
200mA
125kBaud
MC33388
TRANSISTOR mcr 100-8
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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laptop motherboard chip level crb
Abstract: CL-GD5320 LAPTOP Motherboard CHIP LEVEL book GD610 CL-GD610 gd5320 GD6340 gd510 CL-GD6410 cirrus logic gd610
Text: CL-GD6420 Data Book FEATURES • Single-chip VGA controller ■ Pin-compatible with the CL-GD6410 in 2-DRAM applications High-Resolution LCD VGA Controller for Notebook Computers ■ Up to 1 Mbyte 2, 4, or 8 256K x 4 DRAM Video Memory ■ Extended resolution up to 1024 x 768 with 256 colors on
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CL-GD6420
CL-GD6410
CL-GD6420
CL-GD6410,
laptop motherboard chip level crb
CL-GD5320
LAPTOP Motherboard CHIP LEVEL book
GD610
CL-GD610
gd5320
GD6340
gd510
cirrus logic gd610
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
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Untitled
Abstract: No abstract text available
Text: W3H264M16E-XBX ADVANCED* 256MB – 2 x 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS Data rate = 400 Mb/s, 533 Mb/s, 667 Mb/s* Larger ball pitch for higher reliability Package: Footprint compatible with W3H64M16E • 79 Plastic Ball Grid Array PBGA , 11 x 14mm
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W3H264M16E-XBX
256MB
W3H64M16E
128MB"
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DNU-A13
Abstract: No abstract text available
Text: W3H64M16E-XBX 128MB – 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS Data rate = 400 Mb/s, 533 Mb/s Larger ball pitch for higher reliability Package: Pinout compatible with 2-Rank Version • 79 Plastic Ball Grid Array PBGA , 11 x 14mm
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W3H64M16E-XBX
128MB
DNU-A13
128MB"
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Untitled
Abstract: No abstract text available
Text: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays
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IDT82V2082
772KHz
TBR12/13
82V2082
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Untitled
Abstract: No abstract text available
Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp
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AS4DDR232M64PBG
32Mx64
AS4DDR232M64PBG
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CHN 703
Abstract: CHN G4 112
Text: IDT82V2048 OCTAL T1/E1 SHORT HAUL LINE INTERFACE UNIT FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ Fully integrated octal T1/E1 short haul line interface which supports 100Ω T1 twisted pair, 120Ω E1 twisted pair and 75Ω E1 coaxial applications Selectable single rail or dual rail mode and AMI or HDB3/B8ZS
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IDT82V2048
CTR12/
on3/25/2002
CHN 703
CHN G4 112
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spdif jack 6 pin
Abstract: VRM Section of laptop Motherboard INTEL 845 MOTHERBOARD CIRCUIT diagram STAC9700 STAC9721 STAC9750 STAC9752 STAC9753 STAC9756 STAC9766
Text: DATASHEET TWO-CHANNEL, 20-BIT, AC’97 2.3 CODECS WITH HEADPHONE DRIVE, SPDIF OUTPUT MICROPHONE & JACK SENSING Description IDT's STAC9752/9753 are general purpose 20-bit, full duplex, audio CODECs conforming to the analog component specification of AC'97 Audio CODEC 97
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20-BIT,
20-bit
STAC9750
STAC9766
STAC9700,
STAC9721,
STAC9756
STAC9753)
STAC9752)
STAC9752/9753
spdif jack 6 pin
VRM Section of laptop Motherboard
INTEL 845 MOTHERBOARD CIRCUIT diagram
STAC9700
STAC9721
STAC9752
STAC9753
STAC9756
STAC9766
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W3H32M72E-XSBX
Abstract: calibration definition
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
W3H32M72E-XSBX
calibration definition
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S3F828BX
Abstract: S3F8285X S3F8289X
Text: S3C828BX/F828BX /C8289X/F8289X /C8285X/F8285X 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.5 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no
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S3C828BX/F828BX
/C8289X/F8289X
/C8285X/F8285X
SEG23/P4
SEG25/P4
SEG27/P5
SEG10/P6
SEG12/P6
SEG14/P6
SEG16/P6
S3F828BX
S3F8285X
S3F8289X
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IST13
Abstract: No abstract text available
Text: CR16MNS5, CR16MFS5, and CR16MPS5 are Obsolete Devices CR16MES5,CR16MES9,CR16MFS5,CR16MFS9, CR16MHS5,CR16MHS9,CR16MNS5,CR16MNS9, CR16MPS5,CR16MUS5,CR16MUS9 6MPS5/CR16MUS5/CR16MUS9 Family of CompactRISC 16-Bit Microcontrollers
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CR16MNS5,
CR16MFS5,
CR16MPS5
CR16MES5
CR16MES9
CR16MFS5
CR16MFS9,
CR16MHS5
CR16MHS9
CR16MNS5
IST13
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446H
Abstract: 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 640-Pin
Text: 21 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2821 Version 3 February 6, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.
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IDT82P2821
640-pin
BH640)
BHG640)
82P2821
446H
451H
RDN11
GR-253-CORE
GR-499-CORE
IDT82P2821
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
W3H32M72E-XSBX
667Mbs
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Untitled
Abstract: No abstract text available
Text: INVERSE MULTIPLEXING FOR ATM IDT82V2608 Version - 2 December 8, 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • • FAX: (408) 492-8674 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance
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IDT82V2608
BB208)
82V2608
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ether H5
Abstract: futaba vfd 9 GP1219A01A Futaba VFD display futaba vfd circuit diagram 256X64 Futaba VFD futaba 4 digit Futaba protocol futaba display 126
Text: TENTATIVE VACUUM FLUORESCENT DISPLAY MODULE ENGINEERING PROPOSAL GP1219A01A EVALUATION □ ACCEPTED WITHOUT ANY CHANGE □ THE FOLLOWING CHANGE IS REQUIRED April 1 , 2008 Engineering Group Electronic Components Division ISSUED Yasuo Ohno BY CHECKED BY CHECKED
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GP1219A01A
GP1219A01A
256Kbit
256x64
ether H5
futaba vfd 9
Futaba VFD display
futaba vfd circuit diagram
Futaba VFD
futaba 4 digit
Futaba protocol
futaba display 126
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges Organized as 32M x 64, user configurable as 2 x
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W3H32M64E-XSBX
667Mbs
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W3H32M72E
Abstract: BA0BA12
Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
667Mbs
533Mbs)
650ps,
-550ps,
500ps.
W3H32M72E
BA0BA12
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hy5rs123235b
Abstract: HY5RS123235BFP HY5RS123235
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
hy5rs123235b
HY5RS123235
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Untitled
Abstract: No abstract text available
Text: Lattica ispLSI and pLSI 1032 ;Semiconductor I Corporation High-Density Programmable Logic Functional Block Diagram Features HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers
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Military/883
1032-60LJI
84-Pin
1032-60LTI
100-Pin
MILITARY/883
1032-60LG/883
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Untitled
Abstract: No abstract text available
Text: Lattice ispLSr 1032 H I Semiconductor •■■ Corporation In-System Programmable High Density PLD Functional Block Diagram Features • HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs
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Military/883
84-Pin
1032-60LJ
1Q32-6GLT
100-Pin
1032-60LJI
1032-60LTI
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Untitled
Abstract: No abstract text available
Text: Lattice ispLSr and pLSI 1032 I Semiconductor I Corporation High-Density Programmable Logic Functional Block Diagram Features HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers
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Military/883
1032-60LT
100-Pin
1032-60LJI
84-Pin
1032-60LTI
MILITARY/883
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1032-60LJ
Abstract: 1032-60LJI 1032-60LTI 1032-90LJ 1032-90LT smd JSs 13 smd JSs 24
Text: Lattice ispLSI 1032 I Semiconductor I Corporation In-System Programmable High Density PLD Functional Block Diagram Features HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers
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Military/883
100-Pin
1032-60LJ
84-Pin
1Q32-6GLT
1032-60LJI
1032-60LTI
1032-90LJ
1032-90LT
smd JSs 13
smd JSs 24
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