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    W3H32M72E Price and Stock

    Microsemi Corporation W3H32M72E-667SBM

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    Bristol Electronics W3H32M72E-667SBM 1
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    Microchip Technology Inc W3H32M72E-667BM

    PBGA 208/ M�/ DDR2 SDRAM 1.8V 667Mbs CL5 (Alt: W3H32M72E-667BM)
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    Avnet Silica W3H32M72E-667BM 61 Weeks 1
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    Microchip Technology Inc W3H32M72E-533BI

    DRAM Chip DDR2 SDRAM 2.25Gbit 32M x 72 1.8V 208-Pin PBGA (Alt: W3H32M72E-533BI)
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    Avnet Silica W3H32M72E-533BI 53 Weeks 1
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    W3H32M72E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    W3H32M72E-400ESM White Electronic Designs 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package Original PDF
    W3H32M72E-533ESM White Electronic Designs 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package Original PDF
    W3H32M72E-667ESM White Electronic Designs 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package Original PDF
    W3H32M72E-XSBX White Electronic Designs 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package Original PDF

    W3H32M72E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB

    W3H32M72E-XSBX

    Abstract: calibration definition
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX W3H32M72E-XSBX calibration definition

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX W3H32M72E-XSBX 667Mbs

    W3H32M72E

    Abstract: BA0BA12
    Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX 667Mbs 533Mbs) 650ps, -550ps, 500ps. W3H32M72E BA0BA12

    W3H32M72E

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX * 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX 667Mbs

    JESD22

    Abstract: W3H32M72E-XSBX A104 A108 A113
    Text: W3H32M72E-XSBX Application Note W3H32M72E-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C


    Original     		PDF W3H32M72E-XSBX W3H32M72E-XSBX Sn63/Pb37 EIA/JESD22 200A00004-45) AN0044 JESD22 A104 A108 A113

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB W3H64M72E-XSBXF SN63Pb37 SAC305 256MB"

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX ADVANCED* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX W3H32M72E-XSBX 2M72E-ESSB

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB with11,

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX 667Mbs

    W3J128M72G-XPBX

    Abstract: w3j128m72
    Text: W3H32M72E-XSB2X 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  54% I/O reduction vs FPBGA


    Original     		PDF W3H32M72E-XSB2X W3J128M72G-XPBX w3j128m72

    W3H32M72E

    Abstract: fbga90
    Text: White Electronic Designs W3H32M72E-XSBX ADVANCED* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX W3H32M72E fbga90

    W3J2256M72-XPBX

    Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
    Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*


    Original     		PDF W3J128M64G-XPBX W3J128M72G-XPBX W3J256M72G-XPBX* W3J2256M72-XPBX* W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX W3J2256M72-XPBX W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    29f040b

    Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
    Text: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3


    Original     		PDF DMD2006F 29f040b teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6

    w3j128m72

    Abstract: ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32
    Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 1GB 1GB Organization 256M x 32 128M x 64 128M x 72 2 x 256M x 16 Part Number W3J256M32G-XNBXƒ W3J128M64G-XNBXƒ W3J128M72G-XNBXƒ W3J2256M16G-XNBXƒ


    Original     		PDF W3J256M32G-XNBX W3J128M64G-XNBX W3J128M72G-XNBX W3J2256M16G-XNBX W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX w3j128m72 ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32