8002K
Abstract: TACB2J224 TACB2G824 TACB2E226 FTACB631V105 f 630 TACB2K563 3152F
Text: 高周波・大電流用（低圧用） RoHS指令 適合品 （標準品） ◆特 長 ● 弊社独自の円筒構造のため性能が優れております。 ● 通電時の発音が微小です。 （静音対応） ● 体積比で従来の TAC に比べ、平均 50％の小形化達成。
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250Vdc315Vdc400Vdc630Vdc800Vdc
033F22F
1100kHz
2100kHzFig
3100kHz
50Ao-p
8515K1057
12K6K
9095RH
1003O
8002K
TACB2J224
TACB2G824
TACB2E226
FTACB631V105
f 630
TACB2K563
3152F
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Untitled
Abstract: No abstract text available
Text: Internet Data Sheet, R e v . 1 . 0 0 , A p r . 2 0 0 6 Cover Page HYB39SC256[80/16]0FE–[6/7] HYB39SC256[80/16]0FF–[6/7] 256-MBit Synchronous DRAM SDRAM RoHS compliant product Memory Products Imprint Edition 2006-04 Published by Infineon Technologies AG,
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HYB39SC256
256-MBit
03062006-NMGU-CQ9D
PG-TSOPII-54-4
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Untitled
Abstract: No abstract text available
Text: March 2007 HYB39SC256[80/16]0FE HYI39SC256[80/16]0FF 256-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.1 Internet Data Sheet HY[B/I]39SC256[80/16]0F[E/F] 256-MBit Synchronous DRAM HYB39SC256[80/16]0FE, HYI39SC256[80/16]0FF Revision History: 2007-03, Rev. 1.1
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HYB39SC256
HYI39SC256
256-MBit
39SC256
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Untitled
Abstract: No abstract text available
Text: July 2007 HYB39SC256[80/16]0FE HYI39SC256[80/16]0FF 256-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.26 Internet Data Sheet HY[B/I]39SC256[80/16]0F[E/F] 256-MBit Synchronous DRAM HYB39SC256[80/16]0FE, HYI39SC256[80/16]0FF Revision History: 2007-07, Rev. 1.26
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HYB39SC256
HYI39SC256
256-MBit
39SC256
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ISO 8015
Abstract: HYB39SC256 "ISO 8015" PC166-333 HYI39SC256160FE-6 Qimonda AG HYB
Text: June 2007 HYB39SC256[80/16]0FE HYI39SC256[80/16]0FF 256-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.25 Internet Data Sheet HY[B/I]39SC256[80/16]0F[E/F] 256-MBit Synchronous DRAM HYB39SC256[80/16]0FE, HYI39SC256[80/16]0FF Revision History: 2007-06, Rev. 1.25
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HYB39SC256
HYI39SC256
256-MBit
39SC256
ISO 8015
"ISO 8015"
PC166-333
HYI39SC256160FE-6
Qimonda AG HYB
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PC133-222-520
Abstract: PC133-222 HYB39S256160FE-7 HYB39S256160FT-7 hyb39s256800fe P-TSOPII-54 HYB39S256160FE HYB39S256800FE-7 00FF TSOP-II-54
Text: September 2006 HYB39S256[4/8/16]00FT L HYB39S256[4/8/16]00FE(L) HYB39S256[4/8/16]00FF(L) 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB39S256[400/800/160]F[E/T/F](L) 256-MBit Synchronous DRAM HYB39S256[4/8/16]00FT(L), HYB39S256[4/8/16]00FE(L), HYB39S256[4/8/16]00FF(L)
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HYB39S256
256-MBit
PC133-222-520
PC133-222
HYB39S256160FE-7
HYB39S256160FT-7
hyb39s256800fe
P-TSOPII-54
HYB39S256160FE
HYB39S256800FE-7
00FF
TSOP-II-54
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HYB39S256400FE-7
Abstract: HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160
Text: September 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) HYB39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.42 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM
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39S256
HYB39S256
HYB39S
256-MBit
HYB39S256400FE-7
HYI39S256160FE7
HYB39S256160FT-7
hyb39s256800fe
HYB39S256800FE-7
HYB39S256400FF-7
HYB39S256407FE
HYB39S256160
HYB39S256160FE
HYI39S256160
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HYB39S256160FE
Abstract: HYB39S256160FE-7
Text: March 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) HYB39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.3 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM
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39S256
HYB39S256
HYB39S
256-MBit
HYB39S256160FE
HYB39S256160FE-7
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION — »— LOC ALL RIGHTS RESERVED. COPYRIGHT DIST GW BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR DESCRIPTION SR10-0504-01 CONNECTOR ASSEMBLY EXEMPLARY CONNECTOR LOADED V E R S IO N S C O N TAC T
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31MAR2000
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BB02-JF
Abstract: BB02-HY O2 micro
Text: BBQ 2-JF B B 0 2 - J F - 2.54mm CUSTOMER PRODOCT SPECIFICATION SHEET FEMALE HEADER PROFILED.1mm, SINGLE ROW 02 to 40 C ON TAC TS SPECIFICATIONS CURRENT RATING CONTACT RESISTANCE INSULATOR RESISTANCE DIELECTRIC W IT H S T A N D I N G OPERATING TEMPERATURE CONTACT MATERIAL
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BB02-JF
20MOHMSMAX
BB02-JF
BB02-HY
O2 micro
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IC 1608B
Abstract: 1608B sd1616a IC 1628b
Text: SUMICON 1600 SERIES RECTANGULAR CONNECTORS T he S U M IC O N 1600 series are m u lti-c o n tac t c o n n e c are C case, CA case, C B A case, ST sto p per, ST A s t o f > \ tors d esig n e d by H irose. per, and S T B sto p per. 8, 12, 16, 20, 24, 28, 34, 45
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MSG100L41
Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Text: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41
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CU16J6S3
CU16L6A3
CU16Q6S3
CU30J6S3
CU30L6A3
CU30Q6S3
CU50J6S3
CU50L6A3
CU50Q6S3
CU80J6S3
MSG100L41
TSS1G41
SF5B42
SM6G14
TSS2G41
1J44
1J-44
TSS25J47S
TSS2J2A44S
f0r3g
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION CONTROL DRAWING 1. MATING INTERFACE DIMENSIONS PER M IL -C -3 9 0 1 2 /T N C SERIES AND DYNAWAVE M D -8 5 KTNC, 18GHz . 2. ELECTRICAL DC TO 1.05 + .04 dB 50 250 100 dB - 6 5 °c 750 FREQUENCY RANGE G H z -VSWR (M A X ) * -INSERTION LOSS (dB M A X )-NOMINAL IMPEDANCE (OHMS)-VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB DOW N)-TEMPERATURE RATING (DEGREES CENTIGRADE) —
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18GHz)
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Untitled
Abstract: No abstract text available
Text: r@ £ ' ••*-./£?<?-‘®r «/9 € ~ ® -l.oosl _ r -" \ i T Y P j\ '- i , -<$• <200 TYP.) - _L (* , ■.asg-& /Ä : M IN: CTYPj ' PR IN TED C IR C U IT M O U N T I N G 'HOLE PATTEJ<.F4 ' ' r 1 A '7 & r £ ? /e /# L , aJ o t æ 1 //\ - ! B m s s P £fZ Çj0-3~&2(2j
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-4S204-
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION CONTROL DRAWING * CONNECTDR SHIPPED AS SHOWN 1. M ATIN G INTERFACE DIMENSIONS FOR 2 .9 2 m m , JACK p e r M D -95 . 2. ELECTRICAL FREQUENCY RANGE GHzVSWR MAX. * INSERTION LOSS (dB MAX.)-NOMINAL IMPEDANCE (OHMS)— VOLTAGE RATING (MAX. VRMS)RF LEAKAGE (MIN. dB DOWN)TEMPERATURE RATING (DEGREES CENTIGRADE) —
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intel ifx780
Abstract: R3051 R3057 3051M
Text: £DRAM Controller For 25MHz & 33MHz IDT R3051 Microprocessors ô \j/ _ ^ p M T R O IM nummary i lup 3R \M ca c lu . the liD R W t tan load a new page into ca th e in just 33ns a single wait slate at 2S or 33MII/. bus rales I . W rite cycles are RanHi'on's enhanced DRAM ( I ’D K W I I is t,u idea! iiic m so ia for
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25MHz
33MHz
R3051
33MII/.
intel ifx780
R3057
3051M
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Untitled
Abstract: No abstract text available
Text: 1 , 2 ,5 9 , 6 0 , S 1 ,6 2 ,1 1 9 ,1 2 0 r i - i 20fig m i w u k q s t= a i f f i , t 1 21 "2 4 0 3 5 W : « * & 1 3 E Í = » « r 1 - 1 2 0 ru s , I 1 21 - 2 4 0 J E rw I. No. A » fflS E N o. A »*3 «S N o. C-ffl. u 1 , 5 9 , 61 , 1 1 91SE a t lift
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20fig
C-353967
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tl 0741
Abstract: No abstract text available
Text: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4800A/AL
GM71CS4800A/AL
71C4800A/AL
GM71CS4800A/AL
tl 0741
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PDF
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Untitled
Abstract: No abstract text available
Text: CD CD CD g CD i O -jA M P K U -K V -^ 7 TRAD E MARK A ji • i Í 1 r CNJ 1 -i I a 0Ï o: h- o LU I l i ? SECT A - A B r L IM^i CAP 7 PLUG 1ÈE. E * 1. : 108—5 4 5 9 N O T E S; 1. PRODUCT S P E C . i 1 0 8 - 5 4 5 9 2 . A P P L IC A B L E CONN. P / N l S E E T A B L E
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10-2C
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Untitled
Abstract: No abstract text available
Text: F U J IT S U S E M IC O N D U C T O R D A TA S H E E T AE1E MEMORY CMOS 4 x 1 Mx 1 6 B I T SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-10 CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81 F641642D is a CMOS Synchronous Dynamic RandQtfi:AcG§SS Memory SDRAM containing
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MB81F641642D-75/-102/-10
576-Word
F641642D
16-bit
54-pin
FPT-54P-M02)
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BR03
Abstract: No abstract text available
Text: £èl : 2 0 .3 * 0 .4 4t~ A - 0 .5 5 e & ¿z  -â * . 2. £ « 7 7 2 77 3, 772730 3- 5Eèoo3g?L*&- Mo. 7OÔ—57S 5# 51 6 o . 4 . ïR f * Ä ^ S m ? S Mo. 1 7 4 -5 0 7 7 . ^ ^ 3 2 « ; 7*72500 -te A ¿Âsfe#- *J — A? _ £ T w l j JÛ k T77? 3 -3 EË/TEST C^C
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772776--S
ECO-11-005294
BR03
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Untitled
Abstract: No abstract text available
Text: 2.54mm FLEX CIRCUIT / FLAT CABLE FLEXLOK HBLB SERIES Burndy FLEXLOK is the first significant breakthrough in a reliable, low-cost connector directly pluggable to flexible printed circuitry and flat cable. Burndy FLEXLOK offers the user reliability, economy, and
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asea rp1
Abstract: asea EH relays working ASEA protection relay ASEA EG 20 asea directional relay
Text: FLjr. J. T ype RP 1 s-ijigk-phnse- p g w fi ic la v , 2É32S In selective p ro tec tio n an d re g u latio n , p ow er relay s a te era ployed fo r m any p u rp o se s an d in each in d iv id u al case s p e d a l re q u ire m e n ts m u st be fulfilled •with regard to th e p ro p ertie s o f th ese
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-S06-
asea rp1
asea EH
relays working
ASEA protection relay
ASEA EG 20
asea directional relay
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION CONTROL DRAWING 1. MATING 2. INTERFACE DIM ENSIONS PE R DYNAWAVE S PE C IF IC A TIO N M D -2 5 . ELECTRICAL FREQUENCY RANGE GHzVSWR MAX. m DC TO 6 GHz. 1.25 .050 dB x \! FGHz. INSERTION LOSS (d B MAX.) — NOMINAL IMPEDANCE (OHMS) - 50 VOLTAGE RATING (MAX. VRMS)
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MIL-C-14550
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