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    39S256 Price and Stock

    Infineon Technologies AG HYB39S256400DT-7

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    Bristol Electronics HYB39S256400DT-7 1,298
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    HYB39S256400DT-7 764
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    Infineon Technologies AG HYB39S256160CT7.5

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    Bristol Electronics HYB39S256160CT7.5 420
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    Qimonda AG HYB39S256160FF-7

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HYB39S256160FF-7 380
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    Infineon Technologies AG HYB39S256160DT-7

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HYB39S256160DT-7 153
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    Siemens HYB39S256400T-7.5

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    Bristol Electronics HYB39S256400T-7.5 124
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    Find more 39S256 price and stock on Findchips.com

    39S256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYB39S256400FE-7

    Abstract: HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160
    Text: September 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) 39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.42 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM


    Original     		PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256400FE-7 HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160

    PC100-322-620

    Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-322-620 PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15

    HYB39S256160FE

    Abstract: HYB39S256160FE-7
    Text: March 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) 39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.3 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM


    Original     		PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256160FE HYB39S256160FE-7

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3

    39S256160T

    Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 39S256160T PC100-322-620 MARKING AX5 SMD MARKING T20

    Untitled

    Abstract: No abstract text available
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit P-TSOPII-54 400mil PC133 PC100 SPT03933

    CAY smd marking code

    Abstract: smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 P-TSOPII-54 PC100-222-620 PC100-323-620
    Text: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information • High Performance: • • • • -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		PDF 39S256400/800/160T cycles/64 P-TSOPII-54 400mil SPT03933 CAY smd marking code smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 PC100-222-620 PC100-323-620

    39S256160DT-7

    Abstract: HYB39S256400D PC133-222-520 PC166
    Text: Data Sheet, Rev. 1.02, Feb. 2004 39S256400D[C/T] L 39S256800D[C/T](L) 39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB39S256400D HYB39S256800D HYB39S256160D 256-MBit P-TSOPII-54 GPX09039 10072003-13LE-FGQQ HYB39S256 TFBGA-54 39S256160DT-7 PC133-222-520 PC166

    PPC823

    Abstract: MGT5100 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16
    Text: Application Note AN2248/D Rev. 1, 02/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred memories where


    Original     		PDF AN2248/D MGT5100 MGT5100 PPC823 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: 39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: 39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2

    PC100-322-620

    Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
    Text: 39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 PC100-322-620 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620

    PC133 registered reference design

    Abstract: No abstract text available
    Text: 39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design

    PC100-322-620

    Abstract: Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider P-TSOPII-54 PC133 registered reference design
    Text: 39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03910 SPT03923 PC100-322-620 Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider PC133 registered reference design

    PC100-322-620

    Abstract: P-TSOPII-54 PC133 registered reference design
    Text: 39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC100-322-620 PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.30, Feb. 2006 39S256400D[C/T] L 39S256800D[C/T](L) 39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM Memory Products Edition 2006-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.


    Original     		PDF HYB39S256400D HYB39S256800D HYB39S256160D 256-MBit P-TSOPII-54-1 10072003-13LE-FGQQ HYB39S256 P-TFBGA-54-8

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v

    MARKING CAW

    Abstract: P-TSOPII-54
    Text: 39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 MARKING CAW

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control


    OCR Scan     		PDF 39S256400/800/160T 0235b05 39S256400/80Q/160AT A53SbDS D1113G0

    39S256160T

    Abstract: PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH P-TSOPII-54
    Text: H Y B 39S 25 640 0/8 00/1 60 T 256M B it S ynch ro n o u s DRAM S IE M E N S 2 5 6 M B it S y n c h ro n o u s D R A M P re lim in a ry In fo rm a tio n • High Perform ance: Multiple Burst Operation -8 -8B -10 Units fC K 125 100 100 M Hz tC K 3 8 10 10 ns


    OCR Scan     		PDF HYB39S256400/800/160T 256MBit HYB39S256400/800/160AT 39S256160T PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH P-TSOPII-54

    39S256160T

    Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
    Text: H 39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled


    OCR Scan     		PDF YB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T APA10 39S256160T-8 39S256400T-8

    Untitled

    Abstract: No abstract text available
    Text: 39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write


    OCR Scan     		PDF HYB39S256400/800/160T 256MBit

    on semiconductor marking code A04

    Abstract: No abstract text available
    Text: H 39S25640x/80x/16xT 256MBit Synchronous DRAM S IE M E N S 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Perform ance: M ultiple Burst Operation -8 -10 Units fC K 125 100 M Hz tC K 3 8 10 ns tA C 3 6 7 ns Autom atic C om m and and Read


    OCR Scan     		PDF YB39S25640x/80x/16xT 256MBit HYB39S25640x/80x/16xT P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 on semiconductor marking code A04