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    HY57V Price and Stock

    SK Hynix Inc HY57V653220BTC-55DR

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    Bristol Electronics HY57V653220BTC-55DR 1,000
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    SK Hynix Inc HY57V653220BTC-55DR-A

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    Bristol Electronics HY57V653220BTC-55DR-A 1,000
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    SK Hynix Inc HY57V161610ETP-7

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    Bristol Electronics HY57V161610ETP-7 979
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    SK Hynix Inc HY57V161610D

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    Bristol Electronics HY57V161610D 693
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    SK Hynix Inc HY57V64820HGT-8DR

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    Bristol Electronics HY57V64820HGT-8DR 500
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    Find more HY57V price and stock on Findchips.com

    HY57V Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V121620 Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V121620LT Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V121620LT-6 Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V121620T Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V121620T-6 Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V121620T-H Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V121620T-K Hynix Semiconductor 4 Banks x 8M x 16-Bit Synchronous DRAM Original PDF
    HY57V12420LT Hynix Semiconductor 4 Banks x 32M x 4-Bit Synchronous DRAM Original PDF
    HY57V12420T Hynix Semiconductor 4 Banks x 32M x 4-Bit Synchronous DRAM Original PDF
    HY57V12820LT Hynix Semiconductor 4 Banks x 16M x 8-Bit Synchronous DRAM Original PDF
    HY57V12820T Hynix Semiconductor 4 Banks x 16M x 8-Bit Synchronous DRAM Original PDF
    HY57V161610D Hynix Semiconductor 2 Banks x 512K x 16 Bit Synchronous DRAM Original PDF
    HY57V161610D-I Hynix Semiconductor 2 Banks x 512K x 16 Bit Synchronous DRAM Original PDF
    HY57V161610DTC Hynix Semiconductor SDRAM - 16Mb Original PDF
    HY57V161610DTC Hynix Semiconductor SDRAM - 16Mb Original PDF
    HY57V161610DTC-10 Hynix Semiconductor 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 100 MHz Original PDF
    HY57V161610DTC-10(I) Hynix Semiconductor SDRAM - 16Mb Original PDF
    HY57V161610DTC-10(I) Hynix Semiconductor SDRAM - 16Mb Original PDF
    HY57V161610DTC-10I Hynix Semiconductor 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M Original PDF
    HY57V161610DTC-15 Hynix Semiconductor SDRAM - 16Mb Original PDF
    ...

    HY57V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY57V641620B

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.


    Original     		HY57V651620B 16Bit HY57V641620B 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75 PDF

    HY57V281620A

    Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI PDF

    HY57V56820BT-H

    Abstract: HY57V56820B HY57V56820BT-6 HY57V56820BT-K
    Text: HY57V12820 L T 4 Banks x 16M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820B is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 16,777,216x8.


    Original     		HY57V12820 HY57V56820B 512-Mbit 216x8. 400mil 54pin HY57V56820BT-H HY57V56820BT-6 HY57V56820BT-K PDF

    HY57V561620T

    Abstract: HY57V561620
    Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of


    Original     		HY57V561620T 16Bit HY57V561620 456bit 304x16. 400mil 54pin HY57V561620T PDF

    HY57V658020B

    Abstract: HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		HY57V658020B HY57V658020B 864-bit 152x8. initiat00MHz 100MHz 83MHz HY57V658020BTC-75I HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I PDF

    4 Banks x 1m x 32Bit Synchronous DRAM

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


    Original     		HY57V283220 HY5V22 32Bit 133MHz 11x13 400mil 86pin HY5V22F 4 Banks x 1m x 32Bit Synchronous DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16


    Original     		HY57V281620HC 16bits 728bit 152x16 400mil 54pin PDF

    HY57V161610D

    Abstract: HY57V161610DTC-10I HY57V161610DTC-55I HY57V161610DTC-6I HY57V161610DTC-7I
    Text: HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of


    Original     		HY57V161610D HY57V161610D 216-bits 288x16. HY57V161610DTC-10I HY57V161610DTC-55I HY57V161610DTC-6I HY57V161610DTC-7I PDF

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function DRAM CMOS Type HY57V561620BLT-H Model AVIC-DRV150 VDD1 1 54 VSS3 DQ0 2 53 DQ15 VDDQ1 3 52 VSSQ4 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9 DQ5 10 DQ6 11 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output


    Original     		HY57V561620BLT-H AVIC-DRV150 A0-A11 DQ0-DQ15 A10/AP PDF

    HYNIX HY57V641620HG

    Abstract: 3clk HY57V641620HG
    Text: HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.


    Original     		HY57V641620HG 16Bit HY57V641620HG 864-bit 576x16. 400mil 54pin HYNIX HY57V641620HG 3clk PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620B L T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


    Original     		HY57V561620B 16Bit HY57V561620B-I 456bit 304x16. 400mil 54pin PDF

    HY57V161610E

    Abstract: HY57V161610ET-10I HY57V161610ET-15I HY57V161610ET-55I HY57V161610ET-5I HY57V161610ET-6I HY57V161610ET-7I HY57V161610ET-8I HY57V161610ET-I
    Text: HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.


    Original     		HY57V161610ET-I HY57V161610E 216-bits 288x16. 400mil 50pin 1Mx16 HY57V161610ET-10I HY57V161610ET-15I HY57V161610ET-55I HY57V161610ET-5I HY57V161610ET-6I HY57V161610ET-7I HY57V161610ET-8I HY57V161610ET-I PDF

    54PIN

    Abstract: 54pin TSOP HY57V561620C HY57V561620CT HY57V561620ctp
    Text: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.


    Original     		HY57V561620C 16Bit 456bit 304x16. 400mil 54pin 54pin TSOP HY57V561620CT HY57V561620ctp PDF

    HY57V281620HCT-HI

    Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
    Text: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16


    Original     		HY57V281620HC 16bits 728bit 152x16 400mil 54pin HY57V281620HCT-HI HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI PDF

    HY57V56820T

    Abstract: No abstract text available
    Text: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.


    Original     		HY57V56820 HY57V56820T 456bit 608x8. 400mil 54pin PDF

    HYNIX HY57V641620HG

    Abstract: HY57V641620HG
    Text: HY57V641620HG L TP 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG(L)TP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG(L)TP is organized as 4banks of 1,048,576x16.


    Original     		HY57V641620HG 16Bit 864-bit 576x16. 400mil 54pin HYNIX HY57V641620HG PDF

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


    Original     		HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S PDF

    0235

    Abstract: No abstract text available
    Text: HY57V64420HGTP 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HGTP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HGTP is organized as 4banks of 4,194,304x4.


    Original     		HY57V64420HGTP HY57V64420HGTP 864-bit 304x4. HY57V644020HGTP 400mil 54pin 0235 PDF

    HY57V56820CT-6

    Abstract: No abstract text available
    Text: HY57V56820C L T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8.


    Original     		HY57V56820C 456bit 608x8. 400mil 54pin HY57V56820CT-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of


    Original     		HY57V56420T HY57V56420 456bit 216x4. 400mil 54pin PDF

    HY57V56820

    Abstract: No abstract text available
    Text: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.


    Original     		HY57V56820 456bit 608x8. 400mil 54pin PDF

    HY57V161610ETP-5I

    Abstract: HY57V161610ETP-7I HY57V161610E HY57V161610ETP-10I HY57V161610ETP-15I HY57V161610ETP-55I HY57V161610ETP-6I HY57V161610ETP-8I HY57V161610ETP-I HY57V161610ETP
    Text: HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.


    Original     		HY57V161610ETP-I HY57V161610E 216-bits 288x16. 400mil 50pin 1Mx16 HY57V161610ETP-5I HY57V161610ETP-7I HY57V161610ETP-10I HY57V161610ETP-15I HY57V161610ETP-55I HY57V161610ETP-6I HY57V161610ETP-8I HY57V161610ETP-I HY57V161610ETP PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    HY57V161610B

    Abstract: No abstract text available
    Text: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610B is organized as 2banks of


    OCR Scan     		161610B HY57V161610B 216-bits 288x16 400mil 1Mx16 47M11 1SD22- PDF