capacitor 100MF
Abstract: TACAN IC M103 A BS 415 capacitor gp 845 M103 SD1538-02 SD1538-2 SD1538
Text: SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN
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SD1538-02
SD1538-02
capacitor 100MF
TACAN
IC M103 A
BS 415 capacitor
gp 845
M103
SD1538-2
SD1538
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capacitor 100MF
Abstract: TACAN M103 SD1538-02 SD1538-2
Text: SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN
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SD1538-02
SD1538-2
SD1538-02
capacitor 100MF
TACAN
M103
SD1538-2
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capacitor 100mf 50v
Abstract: TACAN SD1538-02 M103 SD1538-2
Text: SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN
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SD1538-02
SD1538-2
SD1538-02
capacitor 100mf 50v
TACAN
M103
SD1538-2
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d1536
Abstract: TRANSISTOR 8019 SD1536-08 TACAN transistor
Text: SGS-THOMSON S D 15 3 6 -0 8 iy RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 100 WATTS typ. IFF 1030 - 1090 MHz . 90 WATTS (min.) DME 1025 - 1150 MHz i 90 WATTS (typ.) TACAN 960 - 1215 MHz
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SD1536-08
d1536
TRANSISTOR 8019
TACAN transistor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M350
IB0912M350
IB0912M350-REV-NC-DS-REV-D
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N S D 1 5 3 8 -0 2 m RF & M I C R O W A V E T R A N S I S T O R S A V IO N IC S A P P L IC A T IO N S DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 200 WATTS typ. IFF 1030 - 1090 MHz 150 WATTS (min.) DME 1025 - 1150 MHz 140 WATTS (typ.) TACAN 960 - 1215 MHz
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SD1538-02
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Untitled
Abstract: No abstract text available
Text: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1
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MS2552
MS2552
MS2575
MSC1665
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MRF1375
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz
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MRF1375/D
MRF1375
MRF1375/D*
MRF1375
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Power Transistors MRF1090MA MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc
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MRF1090MA
MRF1090MB
960-121S
MRF1090MB
OCH227A
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TACAN 41 RF transistor
Abstract: No abstract text available
Text: MSC81325M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 X .400 2NLFL DESCRIPTION: 1 The ASI MSC81325M is a Common Base Device Designed for DME and TACAN Pulse Applications. 3 2 FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting
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MSC81325M
MSC81325M
TACAN 41 RF transistor
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Untitled
Abstract: No abstract text available
Text: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 SD1540 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS (typ.) IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz
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SD1540
SD1540
-10lus
045/Ll*
C55/1
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ARM-184
Abstract: ASM-663 1030mhz ARINC 568 AC0820 Transponder ID 48 mil 50071 G.N.M 2nd year IFR 640 AN/ARM-184
Text: Avionics IFR 6015 Ramp Test Set The IFR 6015 is a compact, lightweight and weatherproof unit designed for testing transponder modes 1,2,3A/C/S, TCAS I, II and Military E-TCAS as well as TACAN. • One main user screen for each test mode • Detachable antenna
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AN/ASM-663,
AN/ARM-184,
ARM-184
ASM-663
1030mhz
ARINC 568
AC0820
Transponder ID 48
mil 50071
G.N.M 2nd year
IFR 640
AN/ARM-184
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Untitled
Abstract: No abstract text available
Text: l i Ma jnm jf i.jninfii m Commerce Drive microsemi * «* Tel: 215 631-9840 Montgomeryvilie, P A 18936-1013 »"•«ÿ'WXPow ea-iijjy S U I 527-0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNATED FDR HIGH POWER PULSE !FF AMD TACAN . 5.0 WATTS (min.IIF F 1030-1090MH2.
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1030-1090MH2.
SD1527-B
05S/f
S45-S
132/S
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AVF250
Abstract: ASI10571
Text: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:
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AVF250
AVF250
ASI10571
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Untitled
Abstract: No abstract text available
Text: /= T * 7 J S G S -1 H 0 M S 0 N . M » l l L i g T O ( M [ ] S _S D 1 5 3 8 - 0 2 RF & MICROWAVE TRANSISTO R S AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 200 WATTS (typ. IFF 1030 - 1090 MHz
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SD1538-02
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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Untitled
Abstract: No abstract text available
Text: n = ^ 7 J # . S G S -T H O M S O N M » E L B g T m [ ] f _ S D 1 5 2 8 - 0 8 RF & MICROWAVE TR AN SISTO R S _ A VIO N IC S APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 20 WATTS (typ. IFF 1030 - 1090 MHz
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SD1528-08
7G571
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PDF
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Untitled
Abstract: No abstract text available
Text: fZ 7 S G S -T H O M S O N ^ 7 #. K M SD1540 « « ® « ! RF & M ICROW AVE TR AN SISTO RS AVIONICS APP LIC ATIO N S • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 350 WATTS typ. IFF 1030 - 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz
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SD1540
SD1540
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PDF
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Untitled
Abstract: No abstract text available
Text: M 2 fV I$ C § T S & fY I! 140 C o m m e rc e D riv e W fo n tg o m e iy v ilte , PA 1893 6-10 13 Tel: 215) 631-9840 SD1536-8 RF & MiCROWAVE TRANSISTORS IFF/D ME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DM!'' TACAN 100 W ATTS (typ.) IFF 1030-1090M Hz
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SD1536-8
1030-1090M
1215MH?
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PDF
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Untitled
Abstract: No abstract text available
Text: ü J S S j r x m r r \ ’> j ,x j t î l «n t n t m "f 4 0 C o m m e r c e D r iv e M ic ro s e m j SD152o.8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNED FOR PULSE POW ER IFF, DÍ4E, TACAN * 0 2 b W ATT tvp IFF 1030 1090M M ; « 0.20 WATT (tin .! PME 102Í»-1130MMZ
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SD152o
1090M
-1130MMZ
SCM520-08
24S/G
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 SD1527-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS • DESIGNATED FOR HIGH POWER PULSE IFF ANDTACAN • 5.0 WATTS (min.) IFF 1030-1090MH!
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SD1527-8
1030-1090MH!
960-1215MH*
2502LFL
SD1527-B
SD1527-8
S6//14
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Germanium itt
Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470
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P-100
N-1500
N-2200
Germanium itt
thyratron pl 21
Mallory Vibrator Data Book
National Electronics ignitrons
bat CR Li Mn lab test result
Helipot POTENTIOMETER
Bendix Transistors
selenium rectifier westinghouse
5000W AUDIO AMPLIFIER
6cl6
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PDF
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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HCW51
Abstract: MX0912B350Y D0310 IEC134
Text: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting
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MX0912B350Y
bbS3131
00351Mb
HCW51
MX0912B350Y
D0310
IEC134
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