Untitled
Abstract: No abstract text available
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
2N3792"
2N3792
2N3792CECC
2N3792LPCECC
2N3792SMD
2N3792SMD-JQR-B
O276AB)
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2N3792
Abstract: tansistors TANSISTOR
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
200mA
2N3792
tansistors
TANSISTOR
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Untitled
Abstract: No abstract text available
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
O-204AA)
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NP80N055MHE
Abstract: 80N055 NP80N055MHE-S18-AY NP80N055NHE NP80N055NHE-S18-AY
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MHE,NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Tansistors designed for high current switching applications. ORDERING INFORMATION
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NP80N055MHE
NP80N055NHE
NP80N055MHE-S18-AY
O-220
MP-25K)
NP80N055NHE-S18-AY
O-262
MP-25SK)
O-220)
80N055
NP80N055MHE-S18-AY
NP80N055NHE
NP80N055NHE-S18-AY
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Untitled
Abstract: No abstract text available
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
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XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target
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XH035
XH035
35-micron
mos rm3 data
nmos transistor 0.35 um
MOS RM3
"X-Fab" Core cell library
bsim3v3
jfet wn 428
PHVC
polysilicon resistor
bsim3
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Voltage Controlled Oscillators
Abstract: SAW Oscillators clapp oscillator bjt oscillator BJT phase shift oscillator rohde tuner rohde BB141 noise diode generator power bjt advantages and disadvantages
Text: VOLTAGE CONTROLLED OSCILLATORS INTRODUCTION The steady-state loop equations are In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output
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T 402 transistor
Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Text: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte grated circuits consisting of vertical NPN and PNP
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OCR Scan
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ALA401/402
PR352A21
PR352A2
NR151A01
NR151
005002b
T 402 transistor
702 TRANSISTOR npn
transistor+1906
pnp 8 transistor array
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UA 758 pc
Abstract: LT 758
Text: K7 > y DTC363TK $ /Transistors DTC363TK ry iu H ' 7 >->'*? JSRrtKh 5 >->';* Digital Transistors (Includes Resistors) 0. —T- 'f >^ 7 , b ' 7 > v Z . ' f y ^-/Muting, Transistor Switch • ^ ffi^ is H / D im e n s io n s (Unit : mm) 1) V c e (sat) 5 i - t <
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OCR Scan
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DTC363TK
600mA>
UA 758 pc
LT 758
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bjt oscillator
Abstract: westinghouse oscillator clapp oscillator BJT phase shift oscillator
Text: VOLTAGE CONTROLLED OSCILLATORS Introduction In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output power into the load and the overall circuit
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PDF
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Untitled
Abstract: No abstract text available
Text: Motor Esnoge CocuOs rom SIEMENS The first product which can claim to meet this objec tive is the universal driver TLE 5208-6G. This device contains 6 HS and 6 LS switches, which can be used as desired for lamps, for relays, or for motor control in half- and full-bridge applications.
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OCR Scan
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SO-28
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PDF
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2SA1776
Abstract: 2SB1242 2SB1460 2SB1485 2SD1225M pin 29c40 2sa154 2SB1240 2sb148 2SA1547
Text: Transistors <Pin Inserting Types> ROHM CO LTD SbE D • 0007031» 0^4 ■ RHM ■ATR • ATV Almost the same size as TO-92 but 1W Pc package type. Taped type for automated placement; or bulk specification. Package Application ATR VbED V *VcES *VCER ATV Type
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OCR Scan
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G007031Â
2SA937MLN
2SC2021MLN
2SA937M
2SA1547
2SC202M
2SC4010
2SC4776M
2SC4778
2SA874M
2SA1776
2SB1242
2SB1460
2SB1485
2SD1225M pin
29c40
2sa154
2SB1240
2sb148
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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OCR Scan
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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