transistor x1 3001
Abstract: x1 3001 H 76 KM616FS1010 KM616FU1010 SRAM 64k
Text: K6F1016S4M, K6F1016R4M Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft - UB, LB controls standby mode July 3, 1996 Preliminary 1.0 Finalize
|
Original
|
K6F1016S4M,
K6F1016R4M
KM616FU1010
transistor x1 3001
x1 3001 H 76
KM616FS1010
SRAM 64k
|
PDF
|
cs x1 3001
Abstract: KM616FS1010 KM616FU1010
Text: KM616FS1010, KM616FR1010 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft - UB, LB controls standby mode July 3, 1996 Preliminary 1.0
|
Original
|
KM616FS1010,
KM616FR1010
KM616FU1010
cs x1 3001
KM616FS1010
|
PDF
|
SM-1994
Abstract: A2000V
Text: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The
|
Original
|
HY62UF16100/
HY62QF16100/
HY62EF16100/
HY62SF16100
64Kx16bit
HY62UF16100
HY62QF16100
HY62EF16100
16bit.
SM-1994
A2000V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention
|
Original
|
HY62UF16400/
HY62QF16400/
HY62EF16400/
HY62SF16400
256Kx16bit
HY62UF16400
HY62QF16400
HY62EF16400
16bits.
|
PDF
|
SM-1994
Abstract: No abstract text available
Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The
|
Original
|
HY62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
128Kx16bit
HY62UF16200
HY62QF16200
HY62EF16200
16bits.
SM-1994
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
|
Original
|
HY62UF16400A/
HY62QF16400A/
HY62EF16400A/
HY62SF16400A
256Kx16bit
HY62UF16400A
HY62QF16400A
HY62EF16400A
16bits.
|
PDF
|
HY62QF16200A
Abstract: No abstract text available
Text: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The
|
Original
|
HY62UF16200A/
HY62QF16200A/
HY62EF16200A/
HY62SF16200A
128Kx16bit
HY62UF16200A
HY62QF16200A
HY62EF16200A
16bits.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400 / HY62QF16400 / HY62EF16400 / HY62SF16400 is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
|
Original
|
HY62UF16400/
HY62QF16400/
HY62EF16400/
HY62SF16400
256Kx16bit
HY62UF16400
HY62QF16400
HY62EF16400
16bits.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Y62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention • Standard pin configuration
|
Original
|
Y62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
128Kx16bit
HY62UF16200
HY62QF16200
HY62EF16200
16bits.
|
PDF
|
e53 modbus
Abstract: EN 50470 kwh meter 3 phase socomec EN50470-3 socomec countis e53 modbus iec 62053-21 COUNTIS E41 b 548 rs485 modbus connection 307U
Text: COUNTIS E Energy Measurement for your installations MADE TO MEASURE A comprehensive range for measuring your energy efficiency Software Control Vision DIRIS 514 A GAMME 115 A GB Designed to communicate with all the installation’s products, including and reading COUNTIS Ci, it offers the option of
|
Original
|
F-67235
e53 modbus
EN 50470
kwh meter 3 phase socomec
EN50470-3
socomec countis e53 modbus
iec 62053-21
COUNTIS E41
b 548
rs485 modbus connection
307U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
|
Original
|
HY62UF16401A/
HY62QF16401A/
HY62EF16401A/
HY62SF16401A
256Kx16bit
HY62UF16401A
HY62QF16401A
HY62EF16401A
16bits.
|
PDF
|
KM616FS1010
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616FS1010Z, KM616FR1010Z Family Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision History Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997
|
Original
|
KM616FS1010Z,
KM616FR1010Z
64Kx16
48-CSP
KM616FS10B
25/Typ.
32/Typ.
55/Typ.
KM616FS1010
|
PDF
|
HY62SF16201A
Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
Text: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The
|
Original
|
HY62UF16201A/
HY62QF16201A/
HY62EF16201A/
HY62SF16201A
128Kx16bit
HY62UF16201A
HY62QF16201A
HY62EF16201A
16bits.
HY62SF16201A-I
HY62UF16201A-I
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Metal Case Power Supplies TXH Series, 120–360 Watt CB Scheme Features ◆ Compact U-bracket and enclosed power UL 60950-1 supplies ◆ Screw terminal block ◆ Very high efficiency up to 93% ◆ No internal fan for 120 W & 240 W models. ◆ Universal input 90 – 264 VAC
|
Original
|
CH-8002
|
PDF
|
|
|
BGA-48-0608
Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 FEATURES DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current
|
Original
|
BS616UV2021
120ns
150ns
R0201-BS616UV2021
-40oC
BGA-48-0608
BS616UV2021
BS616UV2021AC
BS616UV2021AI
BS616UV2021DC
BS616UV2021DI
|
PDF
|
TBA120A
Abstract: ELEKTOR DSAGER00063 tba 120 ub
Text: IBA 120 Symmetrischer sechsstufiger Begrenzer-Verstärker mit symmetrischem Koinzidenzdemodulator. NF Gehäuse: TBA 120: D IL ; TBA 120A: Q IL . DC.1 MHz DC DC . . 35 MHz EIN Entkopplung 0V Fi R si n ri ov Entkopplung ov +5 V . + 15 V DC . 35 MHz Demodulator
|
OCR Scan
|
|
PDF
|
TBA120S
Abstract: fz 79 470 TBA120 TBA 470 tba 120 TBA120AS e fzr Keramikfilter SFE murata filter SFE 10.7 120AS
Text: FM-ZF-Verstärker mit Demodulator TBA 120 S TBA 120 AS Bipolare Schaltung S ym m etrischer, achtstu fig er V erstärker m it sym m etrischem Koinzidenzdem odulator zur Verstärkung, Begrenzung und Dem odulation von frequenzm odulierten Signalen, beson ders g ee ig n e t für den Ton-ZF-Teil in FS-G eräten und als FM -ZF -V erstärker in R u ndfunkge
|
OCR Scan
|
Q67000-A657
Q67000-A525
QIP14
TBA120S
fz 79 470
TBA120
TBA 470
tba 120
TBA120AS
e fzr
Keramikfilter SFE
murata filter SFE 10.7
120AS
|
PDF
|
TBA120UB
Abstract: CDA 5.5 MC CDA 5,5 MC TBA120 TBA120T VOGT V8 TBA 325 b TBA120 WITH IC TBA120 tba120 function
Text: SIEM ENS FM IF Amplifier with Demodulator TBA 120 Bipolar IC Features • • • • • • Outstanding limiting qualities Few external components Terminal for video recorder AF output voltage independent of supply voltage Insensitive to hum Very little residual IF
|
OCR Scan
|
Q67000-A919
P-DIP-14
Q67000-A920
TBA120UB
CDA 5.5 MC
CDA 5,5 MC
TBA120
TBA120T
VOGT V8
TBA 325 b
TBA120 WITH
IC TBA120
tba120 function
|
PDF
|
tba 120 ub
Abstract: tba120 TBA120 WITH TBA 850
Text: 47E D B23SbOS DD3404Ö SIEMENS 3 «SIE6 S I E M EN S A K T I E N G E S E L L S C H A F FM IF Amplifier with Demodulator TBA 120 Bipolar IC Features • • • • • • Outstanding limiting qualities Few external components Terminal for video recorder AF output voltage independent of supply voltage
|
OCR Scan
|
B23SbOS
DD3404Ã
Q67000-A919
P-DIP-14
Q67000-A920
34D5fl
TBA120
tba 120 ub
tba120
TBA120 WITH
TBA 850
|
PDF
|
Halbleiterbauelemente DDR
Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder
|
OCR Scan
|
|
PDF
|
MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
|
OCR Scan
|
|
PDF
|
Hyundai HD 170
Abstract: F16-100 HY62SF16100-0
Text: V i m n A l HY62UF16100/ HY62QF16100/ HY62EF16100/ W T il RU A l HY62SF16100 Series 64Kxi6bit full cmos sram PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM
|
OCR Scan
|
HY62UF16100/
HY62QF16100/
HY62EF16100/
HY62SF16100
64Kxi6bit
HY62UF16100
HY62QF16100
HY62EF16100
16bit.
Hyundai HD 170
F16-100
HY62SF16100-0
|
PDF
|
ic tba 810
Abstract: No abstract text available
Text: KM616FS1010Z, KM616FR1010Z Family Preliminary CMOS SRAM Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997 Preliminary
|
OCR Scan
|
KM616FS1010Z,
KM616FR1010Z
64Kx16
48-CSP
KM616FS1010L
KM616FR1010L
ic tba 810
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • J W V i i il n III •■ ■ l i l i l i i l l HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series i 28Kxisbit full cmos sram PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM
|
OCR Scan
|
HY62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
28Kxisbit
48ball
HY62UF16200
HY62QF16200
HY62EF16200
|
PDF
|
