NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
MGP20N14CL/D*
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
NT 407 F power transistor
mosfet 407
MGP20N14CL
MOTOROLA TRANSISTOR TO-220
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
NT 407 F MOSFET TRANSISTOR
NT 407 F power transistor
MGP20N14CL
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SPPX4N60S5
Abstract: TRANSISTOR SMD MARKING CODE ag DIODE smd marking Ag SPBX4N60S5 X4N60S5
Text: SPPX4N60S5 SPBX4N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code
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SPPX4N60S5
SPBX4N60S5
X4N60S5
P-TO220-3-1
P-TO263-3-2
SPPX4N60S5:
SPPX4N60S5
TRANSISTOR SMD MARKING CODE ag
DIODE smd marking Ag
SPBX4N60S5
X4N60S5
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NT 407 F TRANSISTOR TO 220
Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N14CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
108 motorola transistor
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
motorola mosfet
632 transistor motorola
221A-09
MOTOROLA TRANSISTOR
MGP20N14CL
motorola transistor ignition
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
motorola mosfet
108 motorola transistor
motorola sps transistor
motorola transistor ignition
MGP20N14CL
mosfet transistor
NT 407 F transistor
MOTOROLA TRANSISTOR 279
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PTFB090901EA
Abstract: No abstract text available
Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB
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PTVA093002TC
960MHz
758MHz)
PXAC201602FC
2025MHz
2025MHz)
H-49248H-4
H-37248-4
400MHz
2700MHz]
PTFB090901EA
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D3200
Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF3200ZD
WI-2447
602-2H609
MMDF3200
D3200
MMDF3200Z
diode sy 166
TBD 135 Transistor
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TO247AE
Abstract: to-247AE MOTOROLA TRANSISTOR 726 MGW40N60U ADC 0803
Text: MOTOROLA Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGW40N60U Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGW40N60U/D
MGW40N60U
MGW40N60U/D*
TO247AE
to-247AE
MOTOROLA TRANSISTOR 726
MGW40N60U
ADC 0803
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BLF183XR
Abstract: No abstract text available
Text: BLF183XR; BLF183XRS Power LDMOS transistor Rev. 1 — 19 August 2014 Objective data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
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BLF183XR;
BLF183XRS
2002/95/EC,
BLF183XR
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MGP11N60DE
Abstract: 221A-06
Text: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C
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MGP11N60DE/D
MGP11N60DE
MGP11N60DE/D*
MGP11N60DE
221A-06
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632 transistor motorola
Abstract: MGP14N60E
Text: MOTOROLA Order this document by MGP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate IGBT IN TO–220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED
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MGP14N60E/D
MGP14N60E
MGP14N60E/D*
632 transistor motorola
MGP14N60E
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MTDF1P02HD
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTDF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTDF1P02HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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MTDF1P02HD/D
MTDF1P02HD
MTDF1P02HD/D*
MTDF1P02HD
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BLF184XR
Abstract: 001aan207 blf184xrs SOT1214B sot1214 BLF184
Text: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information
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BLF184XR;
BLF184XRS
2002/95/EC,
BLF184XR
001aan207
blf184xrs
SOT1214B
sot1214
BLF184
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MMSF3300R2
Abstract: MMSF3300R2/D
Text: MOTOROLA Order this document by MMSF3300R2/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3300R2 WaveFET Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology
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MMSF3300R2/D
MMSF3300R2
MMSF3300R2/D*
MMSF3300R2
MMSF3300R2/D
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BLF188XR NXP
Abstract: No abstract text available
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
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BLF188XR;
BLF188XRS
BLF188XR
BLF188XR NXP
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MMSF3305
Abstract: MMSF3305R2 S3305
Text: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device WaveFET devices are an advanced series of power MOSFETs
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MMSF3305/D
MMSF3305
MMSF3305
MMSF3305R2
S3305
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MGP5N60ED
Abstract: MGP5N60E Motorola 206 221A-06
Text: MOTOROLA Order this document by MGP5N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP5N60E Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate IGBT IN TO–220 5 A @ 90°C 6 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE
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MGP5N60E/D
MGP5N60E
MGP5N60E/D*
MGP5N60ED
MGP5N60E
Motorola 206
221A-06
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biss 0001
Abstract: PBLS2001D PBLS2003D PBLS2002D pbss4160dpn PBLS4003D PBLS4004Y SOT363 flash PBLS1503V PBLS4003V
Text: Single BISS transistors Double BISS transistors BISS loadswitches Low VCEsat BISS transistors selection guide Key features } Extensive range of BISS transistors } Low collector-emitter saturation voltage VCEsat , e.g. 235 mV @ 5.8 A } Up to 5.8 A collector current capability I C
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OT457
SC-74)
biss 0001
PBLS2001D
PBLS2003D
PBLS2002D
pbss4160dpn
PBLS4003D
PBLS4004Y
SOT363 flash
PBLS1503V
PBLS4003V
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transistor N14
Abstract: MOTOROLA TRANSISTOR TO-220 bt 135 motorola 113 TBD 135 Transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview SM A R TD ISCR ETES In tern ally Clam ped, N -Channel IG B T MGP20 N14 CL 20 A M P E R E S VOLTAGE C L A M P E D N -C H A N N E L IG BT VCE on = 1-9 VOLTS 135 VOLTS (C LA M PED ) T h is Logic Level Insulated Gate Bipolar Transistor (IG BT)
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MGP20
21A-09
transistor N14
MOTOROLA TRANSISTOR TO-220
bt 135
motorola 113
TBD 135 Transistor
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BYT 56 diode
Abstract: smd transistor marking TQ smd diode JD BYt 32
Text: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on
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SPPX4N60S5
VPT05154
SPBX4N60S5
X4N60S5
P-T0220-3-1
P-T0263-3-2
SPPX4N60S5:
BYT 56 diode
smd transistor marking TQ
smd diode JD
BYt 32
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ma2027
Abstract: PH1214-80M
Text: t,3E D 5L42E05 DQ0DÖM3 57T MAP MICROWAVE PULSED POW ER TRANSISTOR PH1214-8.0M PRELIMINARY REV. NC 05/05/92 n/A-con * M/A-COM PHI, INC. p h o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System
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5L42E05
PH1214-8
14ure
MA2027A
ATC100A
TT30M50A,
ma2027
PH1214-80M
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yb 0d
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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1090-400S
yb 0d
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Untitled
Abstract: No abstract text available
Text: M O TO R O L A Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M G W 40N 60U Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW40N60U/D
O-247
340F-03,
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F3200Z
Abstract: 050gj TBD 135 Transistor
Text: MOTOROLA Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F 3200Z WaveFET Motorola Preferred Device Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 11.5 AMPERES
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MMDF3200Z/D
3200Z
F3200Z
050gj
TBD 135 Transistor
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