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    TC 9147 Search Results

    TC 9147 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL69147IRAZ-T Renesas Electronics Corporation Digital Dual Output 7-Phase AMD PWM Controller Visit Renesas Electronics Corporation
    ISL29147IROMZ-T7 Renesas Electronics Corporation Low Power Ambient Light and Proximity Sensor with Enhanced Infrared Rejection Visit Renesas Electronics Corporation
    ISL69147IRAZ Renesas Electronics Corporation Digital Dual Output 7-Phase AMD PWM Controller Visit Renesas Electronics Corporation
    P9147NRGI8 Renesas Electronics Corporation Distributed Power Unit for P9145 Visit Renesas Electronics Corporation
    ISL69147IRAZ-T7A Renesas Electronics Corporation Digital Dual Output 7-Phase AMD PWM Controller Visit Renesas Electronics Corporation
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    TC 9147 Price and Stock

    Hirschmann Electronics GmbH & Co Kg BRS40-00089999-STCY99HHSEAXX.X

    Unmanaged Ethernet Switches BRS40-00089999-STCY99HHSEAXX.X
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    Mouser Electronics BRS40-00089999-STCY99HHSEAXX.X
    • 1 $2626.07
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    Hirschmann Electronics GmbH & Co Kg GMM40-OOOOTTTTCZ9HHS999.9.99

    Ethernet Modules GMM40-OOOOTTTTCZ9HHS999.9.99
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    Mouser Electronics GMM40-OOOOTTTTCZ9HHS999.9.99
    • 1 $1138.13
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    Hirschmann Electronics GmbH & Co Kg RSP30-08033O6TT-TCCY9HSE3SXX.X

    Unmanaged Ethernet Switches RSP30-08033O6TT-TCCY9HSE3SXX.X
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    Mouser Electronics RSP30-08033O6TT-TCCY9HSE3SXX.X
    • 1 $4625.18
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    • 100 $4625.18
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    Toshiba America Electronic Components TC9147BP

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    Bristol Electronics TC9147BP 28
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    TC 9147 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC9147BP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TC9147BP Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TC9147BP Toshiba Analog IC Scan PDF
    TC9147BP Toshiba LSI for Static FM-MW-LW 3 Bands Digital Tuning System Scan PDF
    TC9147P Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TC9147P Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TC9147P Toshiba DTS-8: FM / MW / LW3 Driver IC Scan PDF

    TC 9147 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4BC20UD

    Abstract: CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U
    Text: IGBTs www.irf.com V CES Collector-to-Emitter Voltage V Part Number Max. V CE(on) Collector-to-Emitter Voltage (V) IC Continuous Collector Current T C =25°C TC =25°C (A) (A) PD Max. Power Dissipation (W) Fax on Demand Number Case Outline Key Discrete High Efficiency WARP(tm) Speed


    Original     		PDF 75-150kHz O-220AB IRG4BC20W IRG4BC30W IRG4BC40W O-247AC IRG4PC30W IRG4PC40W IRG4PC50W IRG4BC20UD CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    F100K

    Abstract: SY100S336 SY100S336A SY100S336AFC SY100S336AJC SY100S336AJCTR
    Text: ENHANCED 4-STAGE COUNTER/SHIFT REGISTER FEATURES DESCRIPTION • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1100ps ■ Sn to TC speed improved by 50% ■ Sn set-up and hold time reduced by more than 50% ■ IEE min. of –170mA ■ Industry standard 100K ECL levels


    Original     		PDF 700MHz 1100ps 170mA F100K 24-pin 28-pin SY100S336A SY100S336, SY100S336AJC J28-1 F100K SY100S336 SY100S336AFC SY100S336AJC SY100S336AJCTR

    SY100S336

    Abstract: SY100S336A SY100S336AFC SY100S336AJC SY100S336AJCTR F100K
    Text: ENHANCED 4-STAGE COUNTER/SHIFT REGISTER FEATURES DESCRIPTION • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1100ps ■ Sn to TC speed improved by 50% ■ Sn set-up and hold time reduced by more than 50% ■ IEE min. of –170mA ■ Industry standard 100K ECL levels


    Original     		PDF 700MHz 1100ps 170mA F100K 24-pin 28-pin SY100S336A SY100S336, SY100S336AJC J28-1 SY100S336 SY100S336AFC SY100S336AJC SY100S336AJCTR F100K

    IRF3415

    Abstract: K 9008
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 poIRF3415 O-220AB IRF3415 K 9008

    Untitled

    Abstract: No abstract text available
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 O-220AB

    IRF3415

    Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
    Text: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477D IRF3415 O-220 IRF3415 IRF3415 circuit IRF3415 equivalent 1810ms

    IRF6215

    Abstract: No abstract text available
    Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91479B IRF6215 -150V O-220 IRF6215

    Untitled

    Abstract: No abstract text available
    Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91479B IRF6215 -150V O-220 appl245,

    IRF6215

    Abstract: 49/diode 66a
    Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-150-25 IRF6215 HEXFET TO-220 PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating


    Original     		PDF IRF6215 O-220 91479B IRF6215 -150V 49/diode 66a

    IRF6215

    Abstract: No abstract text available
    Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91479B IRF6215 -150V O-220 IRF6215

    Untitled

    Abstract: No abstract text available
    Text: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91471B IRG4PC50UD O-247AC

    IGBT IRG4PC50UD

    Abstract: IRG4PC50UD
    Text: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91471B IRG4PC50UD O-247AC IGBT IRG4PC50UD IRG4PC50UD

    IRG4PC50U

    Abstract: IRG4PC50
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC IRG4PC50U IRG4PC50

    Untitled

    Abstract: No abstract text available
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC 25GATE

    91470F

    Abstract: IRG4PC50U IRG4PC50 DSA0031117 55A TO-247AC
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC 91470F IRG4PC50U IRG4PC50 DSA0031117 55A TO-247AC

    SY10E016

    Abstract: MC10H016 SY100E016
    Text: 8-BIT SYNCHRONOUS BINARY UP COUNTER SY10E016 SY100E016 DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The SY10/100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture


    Original     		PDF SY10E016 SY100E016 SY10/100E016 MC10H016 J28-1 SY10E016JC SY10E016JCTR SY100E016JC SY10E016 SY100E016

    SY10E016

    Abstract: No abstract text available
    Text: SY10E016 SY100E016 FINAL 8-BIT SYNCHRONOUS BINARY UP COUNTER DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The SY10/100E016 are high-speed synchronous, presettable and cascadable 8-bit binary counters designed for use in new, high-performance ECL systems. Architecture


    Original     		PDF SY10E016 SY100E016 SY10/100E016 MC10H016 J28-1 SY10E016JC SY10E016JCTR SY100E016JC SY10E016

    F100K

    Abstract: SY100S336 SY100S336FC SY100S336JC SY100S336JCTR
    Text: 4-STAGE COUNTER/ SHIFT REGISTER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The SY100S336 functions either as a modulo-16 up/ down counter or as a 4-bit bidirectional shift register and is designed for use in high-performance ECL systems. Three


    Original     		PDF SY100S336 modulo-16 SY100S336FC F24-1 SY100S336JC J28-1 SY100S336JCTR SY100S336 F24-1) F100K SY100S336FC SY100S336JC SY100S336JCTR

    F100K

    Abstract: SY100S336 SY100S336FC SY100S336JC SY100S336JCTR
    Text: 4-STAGE COUNTER/ SHIFT REGISTER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The SY100S336 functions either as a modulo-16 up/ down counter or as a 4-bit bidirectional shift register and is designed for use in high-performance ECL systems. Three


    Original     		PDF SY100S336 modulo-16 log0S336FC F24-1 SY100S336JC J28-1 SY100S336JCTR SY100S336 F24-1) F100K SY100S336FC SY100S336JC SY100S336JCTR

    smd 10 20U

    Abstract: 4BC20U irg4pc50ud 91571 4bc30ud G4BC IRG4PH50UD
    Text: International IG R Rectifier Part Number IGBTs VCES Collector-to-Emitter Voltage V IKax.Va(oit) Collector-to-Emitter Voltage M •c Continuous Collector Current T ,= 2 5 °C Tc = 25°C (A) (A) Pd Max. Power Dissipation (W) Fax on Demand Number Case Outline


    OCR Scan     		PDF 10-75kHz 1RG4RC10UD O-220AB O-247AC IRG4PC30UD IRG4PC40U IRG4PC50UD IRG4PH40UD IRG4PH50UD smd 10 20U 4BC20U 91571 4bc30ud G4BC

    SMD H21

    Abstract: international rectifier SMD 91313 smd 91432
    Text: International IÖ R Rectifier Port Number Government and Space Products Byoss ^DS on (V) (fiJ T f= 2S °C (*) • d Pd @ Tc= 25°C (W) I ^ J O IP C W 1EXFET Power MOSFETs Fax Case on Demand Outline Key Number SEE Hardened SMD-1 N-Channel IR H N 7 4 5 0 S E


    OCR Scan     		PDF O-204AA O-254AA O-259AA SMD H21 international rectifier SMD 91313 smd 91432

    Untitled

    Abstract: No abstract text available
    Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2


    OCR Scan     		PDF PD-91477D IRF3415 O-220