RHRG75100
Abstract: RHRG7570 RHRG7580 RHRG7590
Text: RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
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RHRG7570,
RHRG7580,
RHRG7590,
RHRG75100
RHRG7590
TA49068)
RHRG75100
RHRG7570
RHRG7580
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PDF
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40TB10
Abstract: RHRU50100 RHRU5070 RHRU5080 RHRU5090
Text: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of
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Original
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RHRU5070,
RHRU5080,
RHRU5090,
RHRU50100
RHRU5090
TA49066)
40TB10
RHRU50100
RHRU5070
RHRU5080
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PDF
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RHRU75100
Abstract: RHRU7570 RHRU7580 RHRU7590
Text: RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of
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Original
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RHRU7570,
RHRU7580,
RHRU7590,
RHRU75100
RHRU7590
TA49068)
RHRU75100
RHRU7570
RHRU7580
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PDF
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RHRU5080
Abstract: RHRU5090 RHRU50100 RHRU5070
Text: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of
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Original
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RHRU5070,
RHRU5080,
RHRU5090,
RHRU50100
RHRU5090
TA49066)
RHRU5080
RHRU50100
RHRU5070
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PDF
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RHRU75100
Abstract: RHRU7570 RHRU7580 RHRU7590
Text: RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of
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Original
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RHRU7570,
RHRU7580,
RHRU7590,
RHRU75100
RHRU7590
TA49068)
RHRU75100
RHRU7570
RHRU7580
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PDF
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
RHRU5040
RHRU5060
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PDF
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RHRU7540
Abstract: RHRU7550 RHRU7560
Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast
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RHRU7540,
RHRU7550,
RHRU7560
RHRU7550
TA49067)
RHRU7540
RHRU7560
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PDF
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast
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Original
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
RHRU5040
RHRU5060
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PDF
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RHRU7540
Abstract: RHRU7550 RHRU7560
Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast
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Original
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RHRU7540,
RHRU7550,
RHRU7560
RHRU7550
TA49067)
RHRU7540
RHRU7560
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PDF
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RHRG75100
Abstract: RHRG7570 RHRG7580 RHRG7590
Text: RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
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Original
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RHRG7570,
RHRG7580,
RHRG7590,
RHRG75100
RHRG7590
TA49068)
RHRG75100
RHRG7570
RHRG7580
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PDF
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tc 9310
Abstract: AN7254 AN7260 RFP15N15 TB334
Text: RFP15N15 Data Sheet October 1998 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP15N15
TB334
TA09195.
O-220AB
tc 9310
AN7254
AN7260
RFP15N15
TB334
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PDF
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2N6784
Abstract: TB334
Text: 2N6784 Data Sheet April 1998 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.25A, 200V • rDS ON = 1.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device
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2N6784
O-205AF
2N6784
TB334
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PDF
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1E14
Abstract: 2E12 3E12 FRL430R4 JANSR2N7281
Text: JANSR2N7281 Formerly FRL430R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET November 1998 File Number 4294 Features • 2A, 500V, rDS ON = 2.50Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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JANSR2N7281
FRL430R4
1000K
1E14
2E12
3E12
FRL430R4
JANSR2N7281
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PDF
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g6n50e
Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR
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HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTD6N50E1
O-251AA
O-252AA
g6n50e
G6N50
HGTD6N40E1
HGTD6N40E1S
HGTD6N50E1
HGTD6N50E1S
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G10N50
Abstract: HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S HGTD10N40
Text: HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs March 1997 Features Packages • 10A, 400V and 500V HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA • VCE ON 2.5V Max. • TFALL ≤1.4µs EMITTER COLLECTOR GATE • Low On-State Voltage
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HGTD10N40F1,
HGTD10N40F1S,
HGTD10N50F1,
HGTD10N50F1S
HGTD10N50F1
O-251AA
O-252AA
G10N50
HGTD10N40F1
HGTD10N40F1S
HGTD10N50F1
HGTD10N50F1S
HGTD10N40
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PDF
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G20N50c
Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance
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HGTG20N50C1D
O-247
500ns
150oC.
G20N50c
g20n50c1d
g20n50
g20N50c1
HGTG20N50
HGTG20N50C1D
20A igbt
IGBT Drivers Transistors
ACT10
AN7254
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PDF
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diode 10a 400v
Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
Text: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance
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HGTP10N40F1D,
HGTP10N50F1D
O-220AB
150oC.
diode 10a 400v
200v dc motor igbt
ultrafast diode 10a 400v
10N40F1D
ge 047 TRANSISTOR
HGTP10N40F1D
HGTP10N50F1D
10N50F1
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PDF
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Untitled
Abstract: No abstract text available
Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSTYC9055D,
FSTYC9055R
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7438 Semiconductor Data Sheet Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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JANSR2N7438
FSL913A0R4,
1-800-4-HARRIS
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PDF
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1E14
Abstract: 2E12 FSL923A0R4 JANSR2N7439
Text: JANSR2N7439 Data Sheet Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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Original
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JANSR2N7439
FSL923A0R4,
1E14
2E12
FSL923A0R4
JANSR2N7439
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PDF
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1E14
Abstract: 2E12 FSF254R4 JANSR2N7407
Text: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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Original
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JANSR2N7407
FSF254R4,
1E14
2E12
FSF254R4
JANSR2N7407
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PDF
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FSS913A0R4
Abstract: 2E12 JANSR2N7440
Text: JANSR2N7440 Data Sheet Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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JANSR2N7440
FSS913A0R4,
FSS913A0R4
2E12
JANSR2N7440
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PDF
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74LS160D
Abstract: 74LS160PC IC 74LS160 74160PC 74LS160 parallel counter 74LS160P Ls 74160 74LS162D 74162FC logic diagram of 74ls160
Text: 160 • 162 CONNECTION DIAGRAM \ftoic oïb PINOUT A 54/74160 • 54LS/74LS160 ¿ ,6 ^ /7 4 1 6 2 • 94LS/74LS162 0/co4- / ^SYNCHRONOUS PRESETTABLE BCD DECADE COUNTERS H E îfilv c c C P |7 î ï DESCRIPTION — The ’160 and '162 are high speed synchronous decade
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OCR Scan
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54LS/74LS160
94LS/74LS162
54/74LS
74LS160D
74LS160PC
IC 74LS160
74160PC
74LS160 parallel counter
74LS160P
Ls 74160
74LS162D
74162FC
logic diagram of 74ls160
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PDF
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74160PC
Abstract: 74LS160 parallel counter 74LS160PC BCD Decade logic diagram 74160 74LS160D 74LS162 74LS160DC 74160 74LS162 parallel counter logic diagram of 74ls160
Text: 160 162 • CO NN ECTIO N DIAGRAM / n i * 54/74160 54LS/74LS160 S4LS/74LS162 ^ ^ 4 /7 4 1 6 2 P IN O U T A \ / ô / o ô ï o / ^S Y N C H R O N O U S PRESETTABLE BCD DECADE COUNTERS DESC R IP TIO N — The ’160 and '162 are high speed synchronous decade
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OCR Scan
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54LS/74LS160
S4LS/74LS162
S4/74LS
02T30S2
74160PC
74LS160 parallel counter
74LS160PC
BCD Decade logic diagram 74160
74LS160D
74LS162
74LS160DC
74160
74LS162 parallel counter
logic diagram of 74ls160
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PDF
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