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    TC1201

    Abstract: TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801
    Text: 20060526 FET Chips Products Selection Guide I. Super Lower Noise GaAs FETs Product No. Freq. GHz N.F. (dB) P-1 dB (dBm) Gain (dB) Notes TC1101 12 0.5 18.5 15 Chip TC1101V 12 0.5 18.5 15 Chip / with via hole TC1102 12 0.5 - 13 Chip TC1201 12 0.5 21.5 12 Chip


    Original     		PDF TC1101 TC1101V TC1102 TC1201 TC1201V TC1202 TC1301 TC1301V TC1304 TC1304V TC1201 TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801

    pHEMT 6GHz

    Abstract: 0619 817A TC3957
    Text: TC3957 REV2_20080516 1W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 1W Typical Output Power at 6GHz • 10dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 40 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz


    Original     		PDF TC3957 TC3957 TC1501N pHEMT 6GHz 0619 817A