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    TC247 Search Results

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    LTC2470IMS#TRPBF Analog Devices Sel 208sps/833sps, 16-B ?S ADC Visit Analog Devices Buy
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    LTC2473CMS#PBF Analog Devices Sel 208sps/833sps, 16-B I2C ?S Visit Analog Devices Buy
    LTC2471CDD#PBF Analog Devices Sel 208sps/833sps, 16-B I2C ?S Visit Analog Devices Buy
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    Analog Devices Inc LTC2470IMS#TRPBF

    IC ADC 16BIT SIGMA-DELTA 12MSOP
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    Analog Devices Inc LTC2470IMS#PBF

    IC ADC 16BIT SIGMA-DELTA 12MSOP
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    Analog Devices Inc LTC2471IMS#PBF

    IC ADC 16BIT SIGMA-DELTA 12MSOP
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    DigiKey LTC2471IMS#PBF Tube 984 1
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    Analog Devices Inc LTC2472CMS#PBF

    IC ADC 16BIT SIGMA-DELTA 12MSOP
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    DigiKey LTC2472CMS#PBF Tube 777 1
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    Richardson RFPD LTC2472CMS#PBF 222
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    Analog Devices Inc LTC2470IDD#PBF

    IC ADC 16BIT SIGMA-DELTA 12DFN
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    DigiKey LTC2470IDD#PBF Tube 335 1
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    Analog Devices Inc LTC2470IDD#PBF 551
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    Richardson RFPD LTC2470IDD#PBF 121
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    Find more TC247 price and stock on Findchips.com

    TC247 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC247SPD-B0 Texas Instruments Impactron High Sensitivity VGA-Resolution Frame Interline Transfer B/W CCD (Cooled) Original PDF

    TC247 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tc247

    Abstract: No abstract text available
    Text: TC247 www.ti.com SOCS091B – DECEMBER 2004 – REVISED JUNE 2010 680 x 500 PIXEL IMPACTRON MONOCHROME CCD IMAGE SENSOR Check for Samples: TC247 FEATURES 1 • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain


    Original     		PDF TC247 SOCS091B tc247

    EL7156

    Abstract: No abstract text available
    Text: TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 x x x x x x x x ፸፺ ᎚᎜ᎉ ፸፼ ᎚ᎈᎎ፹ ᎝᎖᎜᎛ ፸፷ ᎚᎜ᎉ ፸፹ ፸፽ ᎚ᎈᎎ፸ ᎀ ፸፻ ᎝ᎊ᎓ᎋ ፸፾ ᎗፯፴፰


    Original     		PDF TC247SPD-B0 SOCS091 EL7156

    ir 499h

    Abstract: cm500 TC247SPD-B0 CCM TEXAS peltier TC247SPD EL7156CS HN1A01F EL7156
    Text: TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 • • • • • • • • 13 SU B 15 SA G 2 V O U T 10 12 16 SA G 1 9 SU B 17 P - 8 NC VDD 19 14 V C LD 18 P(-) 7 SU B 11 20 P(+) 6 TH ER


    Original     		PDF TC247SPD-B0 SOCS091 ir 499h cm500 TC247SPD-B0 CCM TEXAS peltier TC247SPD EL7156CS HN1A01F EL7156

    Three bond

    Abstract: TC247
    Text: TC247 www.ti.com SOCS091B – DECEMBER 2004 – REVISED JUNE 2010 680 x 500 PIXEL IMPACTRON MONOCHROME CCD IMAGE SENSOR Check for Samples: TC247 FEATURES 1 • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain


    Original     		PDF TC247 SOCS091B Three bond TC247

    transistor on 4409

    Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180
    Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units : mm S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5180 2SC5180 transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA

    NT 407 F TRANSISTOR

    Abstract: NT 407 F power transistor 2SC5178 2SC5178-T1 2SC5178-T2 transistor NEC D 587 t84 marking
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec 13772

    Abstract: 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715
    Text: DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5182 2SC5182-T1 SC-59 nec 13772 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715

    UC 3525 IC

    Abstract: 2SC5179 2SC5179-T1 2SC5179-T2
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    ICX655AL

    Abstract: KAF-4202 ICX655ALA CCD47-20 KDS88 CCD-42-40 CCD133ADC IS230-1340-75S-R29-L14 CCD44-82 CCD230-42
    Text: SO C I ATI O IN DU ST RY AU T RoHS Compliant ISO 9001 Certified NT ME RN VE GO AS INTERCONNECTION SPECIALISTS G IN ANDON TED IMA MA G O N EDUCATION Image Sensor to Socket Cross Reference Altasens Altasens Part Number 2460-1280X720 2460-1280X1024 2462-1280X720


    Original     		PDF 2460-1280X720 2460-1280X1024 2462-1280X720 2462-1280X1024 2463-1280X720 2463-1280X1024 2560-1280X720 2560-1280X1024 2562-1280X720 2562-1280X1024 ICX655AL KAF-4202 ICX655ALA CCD47-20 KDS88 CCD-42-40 CCD133ADC IS230-1340-75S-R29-L14 CCD44-82 CCD230-42

    2SC5181

    Abstract: 2SC5181-T1 TC-2478 2Sc5181 application
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec 2651

    Abstract: hfe 4049 2454 transistor 2SC5177 2SC5177-T1 2SC5177-T2 285-2 MAG IC t84 marking of IC 4047 8 pin ic 3773
    Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5177 2SC5177-T2 nec 2651 hfe 4049 2454 transistor 2SC5177 2SC5177-T1 2SC5177-T2 285-2 MAG IC t84 marking of IC 4047 8 pin ic 3773

    ic nec 2701

    Abstract: ic sc 4145 2SC5178 2SC5178-T1 2SC5178-T2 ic 7441 t84 marking PT 4207
    Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units: mm |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5178 2SC5178-T2 2SC51cial: ic nec 2701 ic sc 4145 2SC5178 2SC5178-T1 2SC5178-T2 ic 7441 t84 marking PT 4207

    a1273* transistor

    Abstract: A773* Transistor
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5179

    Abstract: 2SC5179-T1 2SC5179-T2 transistor with marking S 0922
    Text: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5179 2SC5179 2SC5179-T1 2SC5179-T2 transistor with marking S 0922

    nec 3326

    Abstract: TC-2478 2SC5181 2SC5181-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5181 15ecial: nec 3326 TC-2478 2SC5181 2SC5181-T1

    Tc264

    Abstract: No abstract text available
    Text: DATA SHEET AAT4282A: Slew Rate Controlled Load Switch Applications Description • Cellular telephones The AAT4282A SmartSwitch is a member of the Skyworks Application Specific Power MOSFET ASPM™ product family. The AAT4282A is a dual P-channel MOSFET power switch designed


    Original     		PDF AAT4282A: AAT4282A AAT4282A 202231C Tc264

    GHZ micro-X Package

    Abstract: GHZ micro-X ceramic Package TC2281 Micro-X Ceramic TC2282 TC2131 micro-X TC2591 TC2181 micro-x,
    Text: 2007/2/12 P a c k a g e d F E Ts P r o d u c t S e l e c t i o n G u i d e I .Super Lower Noise Packaged GaAs FETs Product No. Freq. GHz N.F.(dB) P-1 dB (dBm) Gain (dB) Notes TC2101 12 1.5 18.5 9 2D, Micro-X Plastic Package TC2111 12 1.5 18.5 8 3D, SOT-143 Plastic Package


    Original     		PDF TC2101 TC2111 OT-143 TC2131 TC2181 TC2182 TC2201 TC2211 TC2281 GHZ micro-X Package GHZ micro-X ceramic Package TC2281 Micro-X Ceramic TC2282 TC2131 micro-X TC2591 TC2181 micro-x,

    transistor NEC D 587

    Abstract: 2SC5177 2SC5177-T1 2SC5177-T2 tc2474
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec 3326

    Abstract: Nec b 616 NF 948
    Text: DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S2ie|2 = 10.5 dBTYP. @ V ce = 2 V , Ic = 7 mA, f = 2 G H z |Szie|2 = 9 .0 dB-rvp. @ V ce = 1 V, Ic = 5 mA, f = 2 G H z


    OCR Scan     		PDF 2SC5181 2SC5181 2SC5181-T1 nec 3326 Nec b 616 NF 948

    NEC k 2134 transistor

    Abstract: 20.000 G nec d 1590 nec 772
    Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain PACKAGE DIMENSIONS Units: mm |Szie|2 = 11.5 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5178 SC-61 2SC5178-T1 2SC5178-T2 NEC k 2134 transistor 20.000 G nec d 1590 nec 772

    NEC IC D 553 C

    Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
    Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z


    OCR Scan     		PDF 2SC5180 2SC5180-- 2SC5180-T2 NEC IC D 553 C ic 723 cn NEC JAPAN 3504 transistor on 4409

    nec 0882

    Abstract: ZO 607 transistor transistor zo 607 zo 607 MA transistor 7813 TC-8001 Specification zo 607 GB marking 2482 TRANSISTOR TRANSISTOR 4841
    Text: NEC A _ DATA SHEET r SILICON TRANSISTOR 2SC4094R MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4094R is an NPN epitaxial silicon tra n s is to r designed fo r use in low -noise and sm all signal a m p lifie rs fro m VHF band to UHF band. Low-


    OCR Scan     		PDF 2SC4094R 2SC4094R 2SC4094R-T1 nec 0882 ZO 607 transistor transistor zo 607 zo 607 MA transistor 7813 TC-8001 Specification zo 607 GB marking 2482 TRANSISTOR TRANSISTOR 4841

    transistor NEC D 882 p

    Abstract: 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS Units: mm Low current consum ption and high gain |Szie|2 = 9 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5179 SC-70 2SC5179-T1 2SC5179-T2 transistor NEC D 882 p 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor

    tc8002

    Abstract: transistor NEC D 586 NEC IC D 553 C 8002 audio amplifier 8 pin TC-8002 nec 817 46R47 transistor NEC D 588 8002 1028 nec d 588
    Text: DATA SHEET N E C ir a - SILICON TRANSISTOR 2SC4095R A MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS M IN I MOLD DESCRIPTION 2S C 4 0 9 5 R is an N P N e p ita x ia l silicon tra n s is to r d e s ig n e d fo r use in lo w noise and sm all sig nal a m p lifie rs fro m VH F band to U H F b an d . 2S C 4095R


    OCR Scan     		PDF 2SC4095R tc8002 transistor NEC D 586 NEC IC D 553 C 8002 audio amplifier 8 pin TC-8002 nec 817 46R47 transistor NEC D 588 8002 1028 nec d 588