TC511632
Abstract: TC511632FL
Text: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high
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TC511632FL/FTL-70/85/10
1632FL7FTL
511632FL7F
1632FLVFTL
TC511632
TC511632FL
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TC511632
Abstract: TC511632FL
Text: TOSHIBA T C 5 1 1 6 3 2 F L / F I L - 7 0 / 8 5 / 10 PRELIM INARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC 511632FL7FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL7FTL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high
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511632FL7FTL
TC511632FL7FTL
TC511632FL7FTL-70/85/10
TC511632FIVFTL-70/85/10
TC511632
TC511632FL
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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TC511632
Abstract: TC518128 BTRL FL 16.0
Text: Pseudo Static RAM C apacity 256KB» T yp e N o . X6 O fgt^za^on Active 115 385 85 135 303 TC51832AP/ASP/AF-10 100 160 248 TC51832APUASPL/AFL-70 70 115 385 TC51832APL/ASPL/AFL-85 85 135 303 TC51832APUASPL/AFL-10 100 160 248 32,768 X 8 5V±10% 85 135 385 100
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TC51832AP/ASP/AF-70
TC51832AP/ASP/AF-85
TC51832AP/ASP/AF-10
256KB»
768x16
072x8
FL/BFWL/BFTL/BTRL-70V
TC511632
TC518128
BTRL
FL 16.0
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