tc5118165bj
Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide
|
Original
|
PDF
|
TC5116405BSJ/BST-60
TC5116405BSJ/BST-70
TC5116405BSJ/BST
300mil)
cycles/64ms
TC51V16325BJ:
SOJ70-P-400A
tc5118165bj
TC5118165
TC5117405
SOJ42-P-400
TC5117405BSJ
hidden refresh
TSOP70-P-400
TC51181
TC5118
TOSHIBA TSOP50-P-400
|
mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
|
Original
|
PDF
|
CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
|
BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
|
OCR Scan
|
PDF
|
TC5116405BSJ/BST-60
TC5116405BSJ/BST
300mil)
DR16060295
SOJ26-P-300C)
BST60
|
CST A 200
Abstract: 5116405 TC5116405
Text: IN T EG R A T ED TOSHIBA T O S H I B A M O S D I G I T A L I N T E G R A T E D CIRCUI T TC5116405 CSJ /CST-40 TC5116405 CSJ / CST - 50 TC5116405 C S J/ C ST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 WORD x4 BIT EDO HYPER PAGE DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC5116405
/CST-40
TC5116405CSJ/CST
300mil)
CST A 200
5116405
|
BST60
Abstract: No abstract text available
Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
|
OCR Scan
|
PDF
|
TC5116405BSJ/BST60
16405BSJ/BST
16405B
TC5116405BSJ/BST
300mil)
TC5116405BS
J/BST-60
DR16060295
BST60
|
BST60
Abstract: No abstract text available
Text: T O S H I B A ^0^7240 OOHôBlS ÔÔ4 • - TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/
|
OCR Scan
|
PDF
|
TC5116405BSJ/BST-60
TC5116405BSJ/BST
TC5116405BSJ/
300mil)
DR16060295
i72Mfl
BST60
|
TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
|
OCR Scan
|
PDF
|
015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
|