TC5117440BSJ60
Abstract: TC5117440BSJ TC5117440BSJ/BST-70
Text: TOSHIBA TC5117440BSJ-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117440BSJ-60/70
TC5117440BSJ
300mil)
tcAC15.
TC5117440BSJ60
TC5117440BSJ/BST-70
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117440BS J-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both
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OCR Scan
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PDF
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TC5117440BS
J-60/70
TC5117440BSJ
TheTC5117440BSJ
300mil)
DR16090394
TDT7240
TC5117440BSJ-60/70
SOJ28-P-300B)
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