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    tc51864

    Abstract: No abstract text available
    Text: TOSHIBA T C 5 1 8 6 4 P L /F L S 5 /1 0 PRELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The


    OCR Scan     		TC51864PL TC51864PL/FL-85/10 002b4Ã tc51864 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC51864PL/FL85/10 PR ELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 6 4 P L is a 5 1 2K bit high speed C M O S p se udo static RAM organized as 6 5 ,5 3 6 w o rd s by 8 bits. T h e T C 5 1 8 6 4 P L utilizes


    OCR Scan     		TC51864PL/FL85/10 TC51864PL/FL-85/10 PDF

    TC511632

    Abstract: TC518128 BTRL FL 16.0
    Text: Pseudo Static RAM C apacity 256KB» T yp e N o . X6 O fgt^za^on Active 115 385 85 135 303 TC51832AP/ASP/AF-10 100 160 248 TC51832APUASPL/AFL-70 70 115 385 TC51832APL/ASPL/AFL-85 85 135 303 TC51832APUASPL/AFL-10 100 160 248 32,768 X 8 5V±10% 85 135 385 100


    OCR Scan     		TC51832AP/ASP/AF-70 TC51832AP/ASP/AF-85 TC51832AP/ASP/AF-10 256KB» 768x16 072x8 FL/BFWL/BFTL/BTRL-70V TC511632 TC518128 BTRL FL 16.0 PDF