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Toshiba America Electronic Components TC551864AJ-20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TC551864AJ-20		14,218			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC551864AJ-15 CACHE SRAM, 64KX18, 15NS, CMOS, PDSO44
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TC551864AJ-15		1,490			1 $8.79 10 $8.79 100 $8.79 1000 $4.395 10000 $4.395	Buy Now
	TC551864AJ-15		24			1 $8.7435 10 $6.4119 100 $5.829 1000 $5.829 10000 $5.829	Buy Now

TC551864 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
toshiba toggle mode nand Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit	Original	PDF	64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Untitled Abstract: No abstract text available Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551864AJ-15/20 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC551864AJ is a 1,179,648 bits high speed static random access memory organized as 65,536 words by 18 bits using CMOS technology and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high	OCR Scan	PDF	TC551864AJ-15/20 TC551864AJ SR01040795 SOJ44-P-400)
TC551864AJ-15 Abstract: TC551864 TC551864AJ-20 TC551864AJ tc551864aj15 TC5518 TC551864AJ20 Text: TOSHIBA TC551864AJ-15/20 PRELIMINARY S I L I C ON GATE C M O S 65, 536 W O R D x 18 BI T C M O S STATIC RAM Description The TC551864AJ is a 1,179,648 bits high speed static random access memory organized as 65,536 words by 18 bits using CMOS technology and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high	OCR Scan	PDF	TC551864AJ-15/20 TC551864AJ TC551864AJ-15 TC551864 TC551864AJ-20 tc551864aj15 TC5518 TC551864AJ20

Catalog Datasheet

MFG & Type

PDF

Document Tags

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

Original

PDF

64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

Untitled

Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551864AJ-15/20 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC551864AJ is a 1,179,648 bits high speed static random access memory organized as 65,536 words by 18 bits using CMOS technology and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

OCR Scan

PDF

TC551864AJ-15/20 TC551864AJ SR01040795 SOJ44-P-400)

TC551864AJ-15

Abstract: TC551864 TC551864AJ-20 TC551864AJ tc551864aj15 TC5518 TC551864AJ20
Text: TOSHIBA TC551864AJ-15/20 PRELIMINARY S I L I C ON GATE C M O S 65, 536 W O R D x 18 BI T C M O S STATIC RAM Description The TC551864AJ is a 1,179,648 bits high speed static random access memory organized as 65,536 words by 18 bits using CMOS technology and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high