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    TCA 355 G Search Results

    TCA 355 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10058831-111LF Amphenol Communications Solutions Micro-TCA Card Edge Connectors,Pressfit termination,170 contacts,30u\\. GXTplating, GoldMatte Tin tail plating. Visit Amphenol Communications Solutions
    10058831-211LF Amphenol Communications Solutions Micro-TCA Card Edge Connectors,Pressfit termination,170 contacts, 30u\\. GXTplating,Matte Tin tail plating. Visit Amphenol Communications Solutions
    10058835-1002LF Amphenol Communications Solutions Micro-TCA Card Edge Connectors,Surface Mount termination,170 contacts30u\\. Gold plating.Matte Tin tail plating. Visit Amphenol Communications Solutions
    10084423-101LF Amphenol Communications Solutions Micro-TCA Card Edge Connectors, Storage & Server System, 20 Position Right Angle card edge connector, 0.76um Gold plating. Visit Amphenol Communications Solutions
    10058835-1003LF Amphenol Communications Solutions Micro-TCA Card Edge Connectors,Surface Mount termination,170 contacts,30u\\. Gold plating,Matte Tin tail plating. Visit Amphenol Communications Solutions
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    TCA 355 G Price and Stock

    Infineon Technologies AG TCA355GHLLA1

    IC PROXIMITY SWITCH 8DSO
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    Infineon Technologies AG TCA355GXLLA1

    IC PROXIMITY SWITCH 8DSOP
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    Infineon Technologies AG TCA355GGEGXUMA1

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    Infineon Technologies AG TCA355GGEGHUMA1

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    Infineon Technologies AG TCA355GXK

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    Rochester Electronics TCA355GXK 25 1
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    TCA 355 G Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TCA355 G Infineon Technologies TCA 355 G Original PDF
    TCA355G Infineon Technologies ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; Original PDF
    TCA 355 G Infineon Technologies Bipolar ICs with Short-Circuit Protection Original PDF
    TCA355G Siemens Proximity switch Original PDF
    TCA355G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TCA355GGEG Siemens Proximity Sensors, Sensors, Transducers, IC PROXIMITY SWITCH PDSO-8 Original PDF
    TCA355GGEGHUMA1 Infineon Technologies Integrated Circuits (ICs) - Interface - Sensor, Capacitive Touch - IC PROXIMITY SWITCH 8DSO Original PDF
    TCA355GGEGXUMA1 Infineon Technologies Integrated Circuits (ICs) - Interface - Sensor, Capacitive Touch - IC PROXIMITY SWITCH 8DSOP Original PDF
    TCA355GHLLA1 Infineon Technologies Integrated Circuits (ICs) - Interface - Sensor, Capacitive Touch - IC PROXIMITY SWITCH 8DSO Original PDF
    TCA355GXK Infineon Technologies TCA355 PROXIMITY SWITCH Original PDF
    TCA355GXLLA1 Infineon Technologies Integrated Circuits (ICs) - Interface - Sensor, Capacitive Touch - IC PROXIMITY SWITCH 8DSOP Original PDF

    TCA 355 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3 : Te le sco p ic Ra ils 3 .1 Te le scopic Ra ils 6 0 k g D Despit e t heir rugged const ruct ion, t hese are am ong t he slim m est t elescopic rails avaiable on t he m arket . All types can be locked in the extended position and are itted with a quick release latch. The load carrying capacity of


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    PDF kg/132

    45580

    Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
    Text: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:


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    PDF HMMC-5617 1GG6-8002 HMMC-5617 5989-9479EN 45580 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


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    PDF DS501-00011-6v0-E MB85R256F MB85R256F

    MB85R256FPF

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


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    PDF DS501-00011-2v0-E MB85R256F MB85R256F MB85R256FPF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


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    PDF DS501-00011-6v0-E MB85R256F MB85R256F

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    TCA 321

    Abstract: TCA 345 CRC-32 G781 GR-253-CORE PM5352 30f-310 TETRA terminal
    Text: PM5352 S/UNI STAR DATA SHEET PMC-1990421 ISSUE 2 SATURN USER NETWORK INTERFACE 155 STAR PM5352 S/UNI-STAR SATURN USER NETWORK INTERFACE (STAR) DATA SHEET ISSUE 2: FEBRUARY 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


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    PDF PM5352 PMC-1990421 PM5352 PMC-1990421 TCA 321 TCA 345 CRC-32 G781 GR-253-CORE 30f-310 TETRA terminal

    555 timer

    Abstract: 555 timer 38 khz HMCS43 ARM13 tca 311 555 timer datasheet HMCS400 555 TIMER APPLICATIONS ADE-502-063 09 67 025 9062
    Text: HMCS400 Series Application Note ADE-502-063 Alternate Order Number Marcom Rev. 1.0 9/16/98 Hitachi Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the


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    PDF HMCS400 ADE-502-063 555 timer 555 timer 38 khz HMCS43 ARM13 tca 311 555 timer datasheet 555 TIMER APPLICATIONS ADE-502-063 09 67 025 9062

    AA13

    Abstract: AC14 G781 GR-253-CORE PM5349
    Text: PMC-Sierra, Inc. PRELIMINARY S/UNI-QUAD DATASHEET PMC-971239 ISSUE 4 PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE 155-QUAD PM5349 S/UNI- 155-QUAD S/UNI-QUAD SATURN USER NETWORK INTERFACE (155-QUAD) DATASHEET PRELIMINARY ISSUE 4: SEPTEMBER 1998 PMC-Sierra, Inc.


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    PDF PMC-971239 PM5349 155-QUAD) PM5349 155-QUAD AA13 AC14 G781 GR-253-CORE

    TCA 321

    Abstract: GR-436-CORE TCA 345 AA13 G781 GR-253-CORE PM5349 PMC-950820
    Text: PMC-Sierra, Inc. PM5349 S/UNI-QUAD S/UNI-QUAD DATASHEET PMC-971239 ISSUE 6 SATURN USER NETWORK INTERFACE 155-QUAD PM5349 S/UNI- 155- QUAD S/UNI-QUAD SATURN USER NETWORK INTERFACE (155-QUAD) DATASHEET ISSUE 6: JULY 1999 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000


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    PDF PM5349 PMC-971239 155-QUAD) PM5349 PMC-971028 TCA 321 GR-436-CORE TCA 345 AA13 G781 GR-253-CORE PMC-950820

    Untitled

    Abstract: No abstract text available
    Text: Proximity Switch Type 0TCA3O5A 0TCA3O5G T C A 305 K 0 TCA 355 B 0TCA355G TCA 305 TCA 355 Ordering Code Package Q67000-A2291 Q67000-A2305 Q67000-A2293 Q67000-A2443 Q67000-A2444 P-DIP-14 P-DSO-14 SMD MIKROPACK, 10 pins (SMD) P-DIP-8 similar to S O -8 (SMD)


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    PDF 0TCA355G Q67000-A2291 Q67000-A2305 Q67000-A2293 Q67000-A2443 Q67000-A2444 P-DIP-14 P-DSO-14 100nF

    Untitled

    Abstract: No abstract text available
    Text: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching


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    PDF fl235bDS 0GSD727

    NF 841 switching diode

    Abstract: DIODE NF-841 TCA355B
    Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier


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    Untitled

    Abstract: No abstract text available
    Text: LMU18 1 6 x 1 6-bit Parallel Multiplier Features Description □ 35 ns worst-case multiply time The LMU18 is a 16-bit parallel multi­ plier featuring high speed and low power consumption. The LMU18 is an 84-pin device which provides simultaneous access to all outputs.


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    PDF LMU18 LMU18 16-bit 84-pin 32-bit MIL-STD883,

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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    Untitled

    Abstract: No abstract text available
    Text: HY514800B Series HYUNDAI 512Kx8-bit CMOS DRAM PREUMINARY DESCRIPTION The HY514800B is the new generation and fast dynamic RAM organized 524,268 x 8-bits. The HY514800B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY514800B 512Kx8-bit 11X388 1AC17-00-MAYM 50fi6 HY514800BJC

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns

    k3882

    Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
    Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d


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    PDF

    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


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    PDF 6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN

    Untitled

    Abstract: No abstract text available
    Text: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY524800 S12KX 28pin 1AC03-20-MAY94 50Afl HY524800J

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of


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    PDF MC-422000A32, 422000A36 32-BIT, 36-BIT MC-422000A32 mPD424400) MC-422000A36 /xPD424400> fiPD421000) 1111rfi

    UD322

    Abstract: H14E AA-322 D322B
    Text: KM416V256DT CMOS D RA M ELECTRONICS 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    PDF KM416V256DT 256Kx16 JU004 7Tb4142 UD322 H14E AA-322 D322B

    MC422000A36

    Abstract: No abstract text available
    Text: DATA SHEET ' MOS INTEGRATED CIRCUIT MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-422000A32 series is a 2 097 152 words by 32 bits dynamic RAM m odule on which 16 pieces of 4 M DRAM fiPD424400 are assembled.


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    PDF MC-422000A32, 422000A36 32-BIT, 36-BIT MC-422000A32 uPD424400 MC-422000A36 jiPD424400) jiPD421000) b427525 MC422000A36

    5118160

    Abstract: No abstract text available
    Text: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)


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    PDF 16-Bit 5118160BSJ-50/-60/-70 W77//77/7/7, ///////////777A 235b05 0071SSb 5118160