S12KX Search Results

TME 57

Contextual Info: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs

Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

EDI8L32512C

Abstract: EDI8L32512C25AC
Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

S12KX

Contextual Info: mosaic S12KX 32 SRAM MODULE semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 PUMA 68S16000/A-020/025/35/45 Issue 4.3: November 1998 Description Features The PUMA 68S16000 is a 16Mbit CMOS High

7C4096

Abstract: AS7C34096 AS7C4096 5hbs AA344
Contextual Info: H igh Perform ance S12KX8 CMOS SRAM AS7C4096 A S7C 34096 1 5 1 2 K X 8 C M O S SR A M P relim inary inform ation SRAM Features • O rg a n iz a tio n : 5 2 4 ,2 8 8 w o rd s x 8 bits • H ig h sp e ed Easy m e m o ry e x p a n s io n w ith CE, OE in p u ts

Contextual Info: mx EDI8G32512V S12Kx32SRAMModule Ei£C1RONC DE9GN& NC. ADVANCED 512Kx32Static RAM CMOS, High SpeedModule F e a tu r e s 512Kx32 bit CMOS Static The EDI8G32512V is a high speed 16 megabit Static RAM Random Access Memory module organized as 512K words by 32 bits. This module is

Contextual Info: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current

KM684000BLP-71

Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
Contextual Info: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package

Contextual Info: «ffí 1 £ 1993 □PM D P S 5 1 2 X 1 6 n 3 Dense-Pac Microsystems, Inc. Ceramic, S12Kx16 SRAM Stack Modules O D E S C R IP T IO N : The D PS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight

ed18f8512

Abstract: ED18F8512C7066C
Contextual Info: ^EDI EDI8F8512C S12Kx8 Static Ram ELECTRONIC QESKSN& MC 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):

CC650

Abstract: H1-200-5
Contextual Info: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read

EDI8F16512

Contextual Info: WDl EDI8F16512Ç 512KX16 SRAM Module ELECTRONIC. LÉSIGNS, INC.i 512KxWStatic RAM CMOS, Module iF eatures The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16bitCM0S Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory

dram zip 256kx16

Contextual Info: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5

Contextual Info: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: intei 28F800BV/CE 8-Mbit 512Kx16,1024Kx8 SmartVoltage Boot Block Flash Memory Family S m artDie P roduct Specification m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V

MT8088

Contextual Info: PRELIMINARY M ir ^ n O M * MT8D88C132VH/432VH S , MT16D88C232VH/832VH (S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM MINICARD 4,8,16,32 m e g a b y t e s 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • • • • • • • •

Contextual Info: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M

3DQ10

Abstract: ICC1 EDI8L32512C20AI
Contextual Info: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

7085NS

Abstract: 7085NS 7085NS 7085NS 44A08
Contextual Info: ^EDI EDI8F32513C 5 12Kx32 Battery Backed SRAM Module ADVANCED Features 512Kx32 bit CMOS Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed SF1AM

Contextual Info: ED18LM32513V-RP 512KX32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed StaticRAM Features 512Kx32 C M O S Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 12,15 and 20ns RAM device with access times of 12,15 and 20ns over the

Contextual Info: ! 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: ■ Organized a s four banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith sixteen 512Kx8 C M O S