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    TCE 1992 Search Results

    TCE 1992 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    82s141

    Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max


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    512x8) 82S141 82S141 500ns 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24 PDF

    TCP 8126

    Abstract: No abstract text available
    Text: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are


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    MB98A8092x, MB98A8102x, MB98A8112x MB98A8122x 68-pin 16-bit 374T75b MB98A8092X-25 MB98A8102X-25 MB98A8112X-25 TCP 8126 PDF

    MB98A80813

    Abstract: PCMCIA Flash Memory Card 512K
    Text: \_pril 1992 Edition 2.0 FUJITSU DATA SHEET MB98A8081X- / 8091x- / 8101x- / 8111x-20 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 256K / 512K / 1 M / 2M-BYTE The Fujitsu MB98A8081x, MB98A8091x, MB98A8101x and MB98A8111x are Flash electrically eraseable and programmable Flash memory cards capable of


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    MB98A8081X- 8091x- 8101x- 8111x-20 MB98A8081x, MB98A8091x, MB98A8101x MB98A8111x 68-pin 16-bit MB98A80813 PCMCIA Flash Memory Card 512K PDF

    MB832000A

    Abstract: MB832000 A831D MBM27C2001
    Text: September 1992 Edition 1.0 FUJITSU DATA SHEET MB832000A CMOS 2M-BIT MASK READ ONLY MEMORY 256K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB832000A is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 8 bits. The MB832000A has TTL-compatible I/O and 3-state output level with fully-static


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    MB832000A MB832000A 200ns MB832000 A831D MBM27C2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: rO January 1992 Edition 2.0 FUJITSU DATA SHEET MB838200A CMOS 8M-BIT MASK READ ONLY MEMORY 512K x 16 1M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB838200A is a CMOS Si-gate mask-programmable static read only memory organized as 524,288 words by 16 bits or 1,048,576 words by 8 bits.


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    MB838200A MB838200A PDF

    Untitled

    Abstract: No abstract text available
    Text: ff» c Q Novem ber 1992 Edition 2 .0 FUJITSU DATASHEET . — MB834200B CMOS 4M-BIT MASK READ ONLY MEMORY 256K x 16 512K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits.


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    MB834200B MB834200B PDF

    80703

    Abstract: 80502
    Text: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are


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    MB98A8040X- 8050x- 8060x- 8070x-30 MB98A8040x, MB98A8050x, MB98A8060x MB98A8070x 68-pin 16-bit 80703 80502 PDF

    mb83

    Abstract: O26U
    Text: March 1992 Edition 1.0A — FUJITSU DATA SHEET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CM OS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock


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    MB834200B MB834200B 16-bit MB34200B F64005S-7C mb83 O26U PDF

    MBM27C2000-15

    Abstract: Fujitsu Ltd MBM27C2000
    Text: FUJITSU LTD S3E D 374^7Sh D0a3bSb Ô5Ô W F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET MBM27C2000 -12/-15 CMOS 2M-BIT UV EPROM CMOS 2,097,152-BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C2000 EPROM is a high speed read-only static memory that is


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    MBM27C2000 152-BIT 144-byte/8-bit 32-pin MBM27C2000-12 MBM27C2000-15 32-LEAD MBM27C2000-15 Fujitsu Ltd PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU July 1992 Edition 3.0 DATA SHEET MB98A9061X- / 9071x- / 9081x- / 9091x-20 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 64K / 1 28K 1256K / 512K-BYTE The Fujitsu MB98A9061x, MB98A9071x, MB98A9081X and MB98A9091x are Static Random Access Memory SRAM cards capable of storing and retrieving


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    MB98A9061X- 9071x- 9081x- 9091x-20 1256K 512K-BYTE MB98A9061x, MB98A9071x, MB98A9081X MB98A9091x PDF

    Untitled

    Abstract: No abstract text available
    Text: « B #*3 f t e 1 6 r O December 1992 Edition 2.0 FUJITSU DATA SHEET MB834200A/AL CMOS 4M-BÌT MASK READ ONLY MEMORY 256K x 16 512K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB834200A/AL is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits.


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    MB834200A/AL MB834200A/AL MB834200AL PDF

    20A1

    Abstract: fujitsu PCMCIA flash
    Text: œ FUJITSU DATASHEET: MB98A8092X- / 8102x- / 8112x- / 8122x-25 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1M / 2M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are Flash electrically eraseable and programmable Flash memory cards capable of


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    MB98A8092X- 8102x- 8112x- 8122x-25 MB98A8092x, MB98A8102x, MB98A8112x MB98A8122x 68-pin 16-bit 20A1 fujitsu PCMCIA flash PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1992 Edition 1.0A FUJITSU DATA SHEET MB834200B CMOS 4M-Bit Mask Read Only Memory The Fujitsu MB834200B is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 16 bits or 524,288 words by 8 bits. It has TTL-compatible I/O 3-state output level with full-static operation i.e., no clock


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    MB834200B MB834200B 16-bit MB34200B PDF

    furukawa standard battery

    Abstract: 61113 MB98A60813
    Text: February 1992 Edition 1.0 FUJITSU DATA SHEET M B 9 8 A 6 0 8 1 X - / 6 0 9 1 x - / 6 1 0 1 x - / 6 1 1 1 x-25 OTPROM MEMORY CARD ONE TIME PR O G R AM M ABLE READ ONLY MEMORY CARD 256K / 512K / 1 M / 2M-BYTE The Fujitsu MB98A6081 x. MB98A6091 x, MB98A6101 x and MB98A6111 x are One


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    MB98A6081 MB98A6091 MB98A6101 MB98A6111 68-pin 16-bit furukawa standard battery 61113 MB98A60813 PDF

    MBM27C64-20

    Abstract: MBM27C64-30 MBM27C64-25 MBM27C64 c3200
    Text: 'c FUJITSU October 1992 Edition 2.0 DATA SHEET MBM27C64-20/-25/-30 CMOS 64K-BIT UV EPROM CMOS 65,536-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C64 is a high speed 65,536-bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM . It is especially well suited for


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    MBM27C64-20/-25/-30 64K-BIT 536-BIT MBM27C64 28-pin 32-pad MBM27C64. MBM27C64-20 MBM27C64-30 MBM27C64-25 c3200 PDF

    Tce 1992

    Abstract: No abstract text available
    Text: & Microchip 27LV256 256K 32K x 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION W ide voltage range 3.0V to 5.5V The Microchip Technology Inc. 27LV256 is a low voltage High speed performance — 200ns maximum access tim e at 3.0V (3.0 volt) CMOS EPROM designed for battery powered


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    27LV256 27LV256 200ns DS11020B-7 DS11020B-8 Tce 1992 PDF

    MBM27C64-30

    Abstract: MBM27C64-20 MBM27C64-25 Fujitsu MBM27C64 MBM27C64
    Text: October 1992 Edition 2.0 FUJITSU DATA SHEET MBM27C64-20/-25/-30 CMOS 64K-BIT UV EPROM CMOS 65,536-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C64 is a high speed 65,536-bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM . It is especially well suited for


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    MBM27C64-20/-25/-30 64K-BIT 536-BIT MBM27C64 28-pin 32-pad MBM27C64. JV0098-92XJ1 MBM27C64-30 MBM27C64-20 MBM27C64-25 Fujitsu MBM27C64 PDF

    Untitled

    Abstract: No abstract text available
    Text: & 27LV512 Microchip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION W ide voltage range 3.0V to 5.5V The Microchip Technology Inc. 27LV512 is a low voltage High speed performance (3.0 volt) CMOS EPROM designed for battery powered — 200ns maximum access tim e at 3.0V


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    27LV512 27LV512 200ns DS11Q21B-7 DS11021B-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns maximum access time The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption


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    27C64 120ns 27C64 120ns. DS11107G-7 DS11107G-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 27C256 M icrochip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns maximum access time bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption


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    27C256 27C256 100nA DS11001H-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: & 27C128 M icrochip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns Maximum access time CMOS Technology for low power consumption — 20mA Active current — 100|iA Standby current Factory programming available Auto-insertion-compatible plastic packages


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    27C128 120ns 28-pin 32-pin DS11003G-7 27C128 DS11003G-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: s¿¡5 DATASHEET: M B 9 8 A 8 0 8 1 X - / =_ FUJITSU 8 0 9 1 x - / 8 1 0 1 x - / 8 I I I X -2 0 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARO 256K / 512K / 1M / 2M-BYTE The Fujitsu MB98A8081X, MB98A8091X, MB98A8101x and MB98A8111x are Flash electrically eraseable and program m able Flash memory cards capable of


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    MB98A8081X, MB98A8091X, MB98A8101x MB98A8111x 68-pin 16-ide 0G0bE02 MB98A8081X-20 MB98A8091X-20 MB98A8101X-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: & 27HC256 M icrochip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27HC256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. • — 55ns access tim e available CMOS technology for low power consumption


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    27HC256 27HC256 100jiA DS11124E-7 DS11124E-8 PDF

    27lc64

    Abstract: NM27LC256 27LC512 NM27LC256QE200
    Text: PRELIMINARY June 1992 NM27LC256 262,144-Bit 32k x 8 Low Current CMOS EPROM General Description Features The NM27LC256 is a 32k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes.


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    NM27LC256 144-Bit NM27LC256 27lc64 27LC512 NM27LC256QE200 PDF