tms320tci6488 evm
Abstract: TMS320TCI6488 ddr2 ram
Text: Application Report SPRAB57—June 2009 TMS320TCI6488 Memory Access Performance Communication Infrastructure Brighton Feng Abstract The TMS320TCI6488 has three C64x+ cores, each of which has 32KB L1D SRAM, 32KB L1P SRAM, 3MB L2 SRAM and can be configured as 1MB/1 MB/1 MB or 1.5
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SPRAB57--June
TMS320TCI6488
32-bit
667MHz
512MB
TCI6488
tms320tci6488 evm
ddr2 ram
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MBM30AL0064
Abstract: NAND FLASH BGA MB84VN23381EJ-90
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23381EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage:2.7V to 3.3V
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MB84VN23381EJ-90
MBM30AL0064
NAND FLASH BGA
MB84VN23381EJ-90
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schneider 3 phase monitoring relay
Abstract: No abstract text available
Text: Maximize protection MiCOM series 10, 20, 30, 40 Comprehensive range of digital protection relays Make the most of your energy Increase energy availability Maximize energy availability and the profits generated by your installation while protecting life and property.
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NRJED111010EN
ART838325
schneider 3 phase monitoring relay
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527h
Abstract: FPT-44P-M08 MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-4E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-4E
MBM30LV0064
MBM30LV0064
527h
FPT-44P-M08
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527H
Abstract: FPT-44P-M08 MBM30LV0032
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-4E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-4E
MBM30LV0032
MBM30LV0032
527H
FPT-44P-M08
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FPT-44P-M08
Abstract: MBM30LV0032
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-2E
MBM30LV0032
MBM30LV0032
FPT-44P-M08
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20885
Abstract: 50REF FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-1E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20885-1E
MBM30LV0128
MBM30LV0128
20885
50REF
FPT-48P-M19
FPT-48P-M20
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FPT-44P-M08
Abstract: MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-3E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
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526h
Abstract: FPT-44P-M08 MBM30LV0032
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-3E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-3E
MBM30LV0032
MBM30LV0032
526h
FPT-44P-M08
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FPT-44P-M08
Abstract: MBM30LV0064 BGA-52P-M01
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-5E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
BGA-52P-M01
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50REF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20885-2E
MBM30LV0128
MBM30LV0128
50REF
FPT-48P-M19
FPT-48P-M20
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chip resistor
Abstract: No abstract text available
Text: TOKEN 晶片電阻 貼片電阻 片式電阻 Chip Resistors 德鍵電子工業股份有限公司 台灣 : 台灣省台北縣五股鄉中興路一段 137 號 電話 : +886-2-29810109 ； 傳真 : +886-2-29887487 大陸 : 广东省深圳市南山区创业路中兴工业城综合楼十二楼
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50PPM/Â
100PPM/Â
200PPM/Â
chip resistor
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load cell rohs 500g
Abstract: EIA1210 1003 smd resistor FCR 06 eia0603 FCR05 RCA03-4D TDA 2010 AR06 eia0402
Text: TOKEN CHIP RESISTORS Surface Mount Chip Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong
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50PPM/
100PPM/
200PPM/
load cell rohs 500g
EIA1210
1003 smd resistor
FCR 06
eia0603
FCR05
RCA03-4D
TDA 2010
AR06
eia0402
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IR2127
Abstract: 600V Current Sensing N-Channel IGBT IR2127S IR2128 IR2128S MP150
Text: Preliminary Data Sheet No. PD-60143-G IR2127/IR2128 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V
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PD-60143-G
IR2127/IR2128
IR2128)
IR2127)
IR2127/IR2128
IR2127
600V Current Sensing N-Channel IGBT
IR2127S
IR2128
IR2128S
MP150
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a3568
Abstract: S-80141ALMC aplication notes w25q32b quanta 6320 XL710 26 Pin GPIO Connector Header Extender 90 Degree Angle TXAL 228 B
Text: Intel Ethernet Controller XL710 Datasheet Networking Division ND Revision: 2.1 December 2014 Legal Lines and Disclaimers No license (express or implied, by estoppel or otherwise) to any intellectual property rights is granted by this document. Intel disclaims all express and implied warranties, including without limitation, the implied warranties of merchantability, fitness for a
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XL710
a3568
S-80141ALMC aplication notes
w25q32b
quanta 6320
XL710
26 Pin GPIO Connector Header Extender 90 Degree Angle
TXAL 228 B
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MB82D01160-90LPBT
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01160-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION
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MB82D01160-90/90L
576-WORD
MB82D01160
16-bit
MB82D01160-90LPBT
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Low Power SRAM Interface FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01171A-90/-90L/-90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface
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MB82D01171A-90/-90L/-90LL
576-WORD
MB82D01171A
16-bit
F0101
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11404-1E MEMORY Low Power SRAM Interface FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01171A-90/-90L/-90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface
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DS05-11404-1E
MB82D01171A-90/-90L/-90LL
576-WORD
MB82D01171A
16-bit
F0104
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85lp
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11405-1E MEMORY Mobile FCRAM CMOS 16Mbit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/85L/90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface
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DS05-11405-1E
16Mbit
MB82D01161-85/85L/90/90L
576-WORD
MB82D01161
16-bit
MB82D01161
85lp
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F0110
Abstract: 004C2000
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •
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MB82D01161-85/-85L/-90/90L
576-WORD
MB82D01161
16-bit
16bit
90nany
F0110
F0110
004C2000
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SGA29
Abstract: 32-KW Load Bank SA133 MBM29DL640E SA72 SA136
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD23381EF-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash
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DS05-50301-1E
MB84VD23381EF-85
SGA29
32-KW Load Bank
SA133
MBM29DL640E
SA72
SA136
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92121
Abstract: 92121 001 HFBR-5103 S2100 09q25
Text: >4MCC PRELIMINARY DEVICE SPECIFICATION 100VG-AnyLAN STP/FIBER OPTIC TRANSCEIVER FEATURES • • • • • • • • • S2100 DESCRIPTION IEEE 802.12 compliant Full Duplex Capability Single +5 V supply STP or Fiber support Fixed receiver based equalization
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100VG-AnyLAN
S2100
S2100
10OVG-AnyLAN
28-PIN
92121
92121 001
HFBR-5103
09q25
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KM44C1002
Abstract: KM44C1002-8
Text: CMOS DRAM KM44C1002 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1002
200jjs
20-LEAD
KM44C1002
KM44C1002-8
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TC511002A
Abstract: No abstract text available
Text: .1 TENTATIVE D AT A 1 ,048,576 W O R D x 1 BIT D Y N A M I C R A M DESCRIPTION The TC511002A P/A J/A Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002A P/A J/A Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
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