transistor C 2240
Abstract: cdi unit c 2240 DIO64
Text: Ordering number: EN 6157 CMOS IC LC7940YC,7941YC Dot-matrix LCD Drivers Overview The LC7940YC and LC7941YC are segment driver ICs for driving large, dot–matrix LCD displays. They read 4– bit parallel or serial input, display data from a controller into an 80–bit latch, and then generate LCD drive signals
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LC7940YC
7941YC
LC7941YC
LC7942YC
l/128
transistor C 2240
cdi unit
c 2240
DIO64
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CL-191S-MB-D
Abstract: CL-191S-MG-D CL191SMBD CL191SMGD
Text: 超高輝度青色・緑色チップLED HB1・MB・BG1・MG High brightness Chip LED HB1,MB,BG1,MG • 特徴／ Features 1. A chip LED of super-luminance using InGaN type LED elements. 2. Light emitted is blue, blue-green or green. 1. InGaN 系 LED 素子を用いた超高輝度チップ LED です。
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CL120°
CL-191/260/270
CL-197
CL-201
CL-221
CL-191S-MB-D
CL-191S-MG-D
CL191SMBD
CL191SMGD
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Untitled
Abstract: No abstract text available
Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C
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SEMiX402GB066HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GB066HDs
SEMiX402GB066HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C
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SEMiX402GAL066HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C
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SEMiX402GAR066HDs
E63532
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SEMIX402GAL
Abstract: No abstract text available
Text: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GAL066HDs
SEMiX402GAL066HDs
SEMIX402GAL
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GAR066HDs
SEMiX402GAR066HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V
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SEMiX402GAR066HDs
SEMiX402GAR066HDs
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si504
Abstract: Si502
Text: Si501/2/3 3 2 K H Z –100 MH Z CMEMS O SC ILLA TOR Features Wide frequency range: 32 kHz to 100 MHz Contact Silicon Labs for frequencies above 100 MHz Si501 single frequency w/ OE Si502 dual frequency w/ OE/FS
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Si501/2/3
Si501
Si502
Si503
10-year
si504
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ARF1501
Abstract: "27 mhz" amp RF 207 Simple test MOSFET Procedures 700B ARF1500
Text: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
1525-xx
40MHz
ARF1501
ARF1500
"27 mhz" amp
RF 207
Simple test MOSFET Procedures
700B
ARF1500
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ARF 250v 1500w
Abstract: "27 mhz" amp ARF1500
Text: S D S S D S ARF1501 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
ARF1500
1525-xx
40MHz
ARF1501
75-380pF
4700pF
ATC700B
C9-C11
ARF 250v 1500w
"27 mhz" amp
ARF1500
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"27 mhz" amp
Abstract: arf15beo 700B ARF1500 ARF1501
Text: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
1525-xx
40MHz
ARF1501
ARF1500
75-380pF
"27 mhz" amp
arf15beo
700B
ARF1500
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ARF1501
Abstract: "27 mhz" amp 700B ARF1500 RF BeO
Text: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
1525-xx
40MHz
ARF1501
ARF1500
75-380pF
"27 mhz" amp
700B
ARF1500
RF BeO
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SMD transistor n36
Abstract: transistor smd f36 EDI88128CS EDI88512CA EDI88512LPA
Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin
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EDI88512CA
512Kx8
EDI88512CA
EDI88128CS.
512Kx8
MIL-STD-883
SMD transistor n36
transistor smd f36
EDI88128CS
EDI88512LPA
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Untitled
Abstract: No abstract text available
Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2470
DN2470
O-252
DSFP-DN2470
A012307
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Untitled
Abstract: No abstract text available
Text: UM10462 LPC11Uxx User manual Rev. 4 — 15 November 2012 User manual Document information Info Content Keywords LPC11Uxx, ARM Cortex-M0, microcontroller, LPC11U12, LPC11U14, LPC11U13, USB, LPC11U23, LPC11U24, LPC11U34, LPC11U35, LPC11U36, LPC11U37 Abstract
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UM10462
LPC11Uxx
LPC11Uxx,
LPC11U12,
LPC11U14,
LPC11U13,
LPC11U23,
LPC11U24,
LPC11U34,
LPC11U35,
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Untitled
Abstract: No abstract text available
Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2470
DN2470
O-252
DSFP-DN2470
A110706
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dash 2b-5
Abstract: BJ70FL Trompeter 305 A71AB BJ73 Trompeter 14949 BJ77
Text: FID ND PL74 PL75 PL375 PL75FL CJ70TL CJ70 CJ370 CJ70FL BJ79TL BJ79 BJ379 BJ79FL PL71 BJ74TL BJ74 BJ374 BJ74FL 1A 1A IB 1A 2A 2A 2B 2A 3A 3A 3B 3A 4 5A 5A 5B 5A BJ77 1 BJ377 Al 1 A2 1 A3 1 A4 1 A5 1 AB 1 A7 1 AB 1 A9 1 Al 1 A2 1 A3 1 A4 1 A5 1 A5 -1 -25 -49
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PL375
PL75FL
CJ70TL
CJ370
CJ70FL
BJ79TL
BJ379
BJ79FL
BJ74TL
BJ374
dash 2b-5
BJ70FL
Trompeter 305
A71AB
BJ73
Trompeter 14949 BJ77
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trompeter BJ77
Abstract: trompeter 14949 ad78 Trompeter 305 ADBJ77-A1-PL74 30057
Text: CONN P2 FIG NO PL74 PL75 PL375 PL75FL CJ70TL CJ70 CJ370 CJ70FL BJ79TL BJ79 BJ379 BJ79FL PL71 8J74TL BJ74 BJ374 BJ74FL 1A 1A IB 1A 2A ¿A 28 2A 3A 3A 3B 3A 4 5A 5A 5B bA BJ77 1 A 1 ! A2 1 A3 1 A4 1 A5 1 A6 1 A7 1 AB 1 A9 1 Al | A2 | A3 -1 -25 -49 -73 -97 /4 \
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PL375
PL75FL
CJ70TL
CJ370
CJ70FL
BJ79TL
BJ379
BJ79FL
8J74TL
BJ374
trompeter BJ77
trompeter 14949 ad78
Trompeter 305
ADBJ77-A1-PL74
30057
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NE555
Abstract: Pinout Diagram for IC ne555 ald1502 timer in astable mode
Text: A dvanced \L ± S r I / I 1 L in e a r ALDI 502/ALD2502 D e v ic e s , Inc. SINGLE/DUAL PRECISION HIGH SPEED MICROPOWER TIMER GENERAL DESCRIPTION APPLICATIONS The ALD1502/ALD2502 timers are high performance single/dual mono lithic timing circuits built with advanced silicon gate CMOS technology.
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502/ALD2502
ALD1502/ALD2502
400ns;
NE555
Pinout Diagram for IC ne555
ald1502 timer in astable mode
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NE555 dip pin configuration
Abstract: No abstract text available
Text: I j I/I \ 1 A dvanced L in e a r ALDI 502/ALD2502 D e v ic e s , In c . SINGLE/DUAL PRECISION HIGH SPEED MICROPOWER TIMER G ENERAL DESCRIPTION APPLICATIONS The ALD1502/ALD2502 timers are high performance single/dual monolilhic timing circuits built with advanced silicon gate CMOS technology.
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502/ALD2502
ALD1502/ALD2502
400ns;
100ns
is100
100ms
ALD1502/A
LD2502
NE555 dip pin configuration
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Untitled
Abstract: No abstract text available
Text: 12_I_ 11_ I_ 10_ I_ 9 _ I_ 8 _ I_ 7_ I_ 6_ I_ 5_ I_ 4_ I_ 3_ I_ 2_ I_1
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5M-1982.
8X20mm
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Untitled
Abstract: No abstract text available
Text: □ M/HITE /M IC R O E L E C T R O N IC S 1Mx32SRAM MODULE WS1M32-XG4TX A D V A N C ED * FEATURES • A ccess Tim es o f 17, 20, 25ns ■ Low Pow er CMOS ■ 68 lead, 40m m Low P ro file CQFP, 3.5m m 0.140" high ■ B u ilt-in D ecoupling Caps and M u ltip le Ground Pins fo r Low
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WS1M32-XG4TX
1Mx32SRAM
512Kx32
WS1M32-XG4TX
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