Untitled
Abstract: No abstract text available
Text: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V) 210 s
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CPC1590
3750Vrms
CPC1590
DS-CPC1590-R01
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led lifespan
Abstract: No abstract text available
Text: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION PRELIMINARY Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V)
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CPC1590
CPC1590
DS-CPC1590-R00C
led lifespan
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1838 t
Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf
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IRGPH50MD2
C-481
1838 t
1838t
IR 1838 T
IR 1838 T datasheet
D-10
IRGPH50MD2
c485
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PDF
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D-10
Abstract: IRGPH50MD2 1838t
Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf
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IRGPH50MD2
C-481
D-10
IRGPH50MD2
1838t
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IRGBC20FD2
Abstract: D-12 T4 diode 18-A
Text: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt
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IRGBC20FD2
O-220AB
C-100
IRGBC20FD2
D-12
T4 diode
18-A
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PDF
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IRGBC20FD2
Abstract: diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A
Text: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt
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IRGBC20FD2
O-220AB
C-100
IRGBC20FD2
diode 18b
diode 18C
D-12
DIODE T4
T4 DIODE
diode c100
18-A
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rl 724 n
Abstract: 1SV202 1SV202BWT OF VR 10K
Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol
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1SV202BWT
OD-523
OD-523
rl 724 n
1SV202
1SV202BWT
OF VR 10K
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PDF
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SEMTECH MARKING
Abstract: 1SV202BWT rl 724 n
Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol
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1SV202BWT
OD-523
OD-523
SEMTECH MARKING
1SV202BWT
rl 724 n
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PDF
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1SV202BWT
Abstract: 1SV202
Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol
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1SV202BWT
OD-523
OD-523
1SV202BWT
1SV202
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PDF
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1SV202
Abstract: 1SV202BWT
Text: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol
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1SV202BWT
OD-523
OD-523
1SV202
1SV202BWT
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PDF
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IRF7101
Abstract: MS-012AA
Text: IRF7204PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
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IRF7204PbF
EIA-481
EIA-541.
IRF7101
MS-012AA
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PDF
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IRF7101
Abstract: No abstract text available
Text: IRF7306PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
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IRF7306PbF
EIA-481
EIA-541.
IRF7101
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF7303QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
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IRF7303QPbF
EIA-481
EIA-541.
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PDF
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314P
Abstract: EIA-541 IRFL014 TO-261AA Package
Text: IRLL014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
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IRLL014PbF
Intern13)
EIA-481
EIA-541.
EIA-418-1.
314P
EIA-541
IRFL014
TO-261AA Package
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC TD62386AP/AF TD62387AP/AF TD62388AP/AF BIPO LAR DIGITAL INTEGRATED CIRCUIT 8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER T h e T D 62386A P, TD 62386AF, TD 62387A P, TD 62 38 7 A F an d T D 62388A P, TD 62388A F are no n -in vertin g tran sistor
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TD62386AP/AF
TD62387AP/AF
TD62388AP/AF
2386A
62386AF,
2387A
2388A
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PDF
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TD52
Abstract: No abstract text available
Text: DIGITALLY CONTROLLED PIN-DIODE FREQUENCY TRANSLATORS SERIES TD GENERAL INFORMATION: KDI/Triangle's Series TD digitallycontrolled frequency translators are designed for serrodyning applications. The devices have low amplitude modulation, high linearity, and fast fly-back time, which produces superior carrier
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DB-25P
TD-52
TD-48
TD52
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PDF
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Untitled
Abstract: No abstract text available
Text: TO S H IBA TD 62381 P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD 6 2 3 8 1 P, TD SILICON MONOLITHIC 62381F 8CH LOW SATURATIO N SIN K DRIVER The TD62381P and TD62381F are comprised of eight NPN low saturation drivers. These devices are specifically designed for multiplexed digit driving of eight digit
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62381F
TD62381P
TD62381F
TD62785P
TD62785F
500mA
/500mA
DIP18-P-300-2
OP18-P-375-1
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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IXSK35N120AU1
O-26re
IXSK35N120AU1
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PDF
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jvv diode
Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N
Text: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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50N120AU1
OT-227
jvv diode
IXDN 50N120AU1
IXDN50N120AU1
0504N
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PDF
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smd diode 819
Abstract: rg33c
Text: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES
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IXGH32N60BU1
IXGH32N60BU1S
T0-247
O-247
smd diode 819
rg33c
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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31N60D1
O-268
GES12
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES
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28N60B
O-268
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PDF
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P 1010
Abstract: AL 102 074d
Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60BD1
PLUS247â
O-247
P 1010
AL 102
074d
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PDF
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Untitled
Abstract: No abstract text available
Text: TD E1890 TD E1891 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH • ■ ■ ■ ■ ■ ■ . ■ . ■ 2A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING
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E1890
E1891
TDE1890/1891
ATT11
TT11V
TDE1891L
TDE180
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PDF
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