SLA5042
Abstract: No abstract text available
Text: SLA5042 N-channel General purpose Absolute maximum ratings Symbol Ratings VDSS VGSS ID 100 ±20 ±5 Unit V BR DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr •Equivalent circuit diagram 2 7 4 6 9 SLA (12-pin) (Ta=25°C) Specification
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SLA5042
12-pin)
SLA5042
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SMD DIODE MARKING 14
Abstract: SC74 marking 345
Text: SO T4 57 IP4285CZ6-TD ESD protection for high-speed interfaces Rev. 2 — 9 December 2011 Preliminary data sheet 1. Product profile 1.1 General description The device is designed to protect electrical interfaces such as USB 2.0 ports in computer or communication devices against ElectroStatic Discharge ESD .
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IP4285CZ6-TD
OT457
SMD DIODE MARKING 14
SC74 marking 345
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TJA1085
Abstract: sot1113 BM131
Text: TJA1086 FlexRay active star coupler Rev. 1 — 18 April 2013 Product data sheet 1. General description The TJA1086 is a FlexRay active star coupler that connects two branches of a FlexRay network. The TJA1086 is compliant with the FlexRay electrical physical layer specification
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TJA1086
TJA1086
TJA1085
sot1113
BM131
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TJA1085
Abstract: No abstract text available
Text: TJA1085 FlexRay active star coupler Rev. 1 — 23 October 2012 Product data sheet 1. General description The TJA1085 is a FlexRay active star coupler that can connect up to 4 branches of a FlexRay network. The TJA1085 is compliant with the FlexRay electrical physical layer
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TJA1085
TJA1085
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DIODE P31B
Abstract: P61a p31b diode p26b p31b p482a p-8cm DIODE P31A P06C diode p35b
Text: This section presents complete electrical specifications for Teccor’s SIDACtor solid state overvoltage protection devices. DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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DO-214AA
DO-214AA
F1250T
F0500T
F1250T
F1251T
DIODE P31B
P61a
p31b diode
p26b
p31b
p482a
p-8cm
DIODE P31A
P06C diode
p35b
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LTC1081
Abstract: LTC1080 db25 pinout db9 DTE dce DTR-20 LT134 BGA-32 LGA-32 RS232 isolation 25-PIN
Text: RS232 Quick Guide EIA/TIA-232-F Standard RS232 conveys data over a simple unterminated, multiconductor cable at rates up to 20kB. The RS232 standard specifies the electrical characteristics and connector for an all encompassing point-to-point modem interface. Although the original specification was intended for modems, subsequent
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RS232
EIA/TIA-232-F
RS232
20kB/s
MiniSO-16
SSOP-28,
SW-28,
LTC1081
LTC1080
db25 pinout
db9 DTE dce
DTR-20
LT134
BGA-32
LGA-32
RS232 isolation
25-PIN
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p30b diode
Abstract: p31b diode DIODE P31B Teccor P0080SC MC marking code DIODE P31A P06C diode p31b suppressor P3000AA61 p31b P31c
Text: This section presents complete electrical specifications for Teccor’s SIDACtor solid state overvoltage protection devices. DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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DO-214AA
DO-214AA
F1250T
F0500T
F1250T
F1251T
p30b diode
p31b diode
DIODE P31B
Teccor P0080SC MC marking code
DIODE P31A
P06C diode
p31b suppressor
P3000AA61
p31b
P31c
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nec sgp
Abstract: A13286EJ1V0UM00
Text: Preliminary User’s Manual USB Host Controller µPD9210FGC-7EA Document No. A13286EJ1V0UM00 1st edition Date Published July 1998 N CP(N) 1998 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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PD9210FGC-7EA
A13286EJ1V0UM00
transp22/9044
nec sgp
A13286EJ1V0UM00
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BAS31
Abstract: BAV19 259-C
Text: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*
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OT-23
BAS31
BAV19
bS01130
BAS31
259-C
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L4800E
Abstract: ML4800P ML4800 application note ml4800
Text: ^Ék Micro Linear A p r il i 9 9 9 PREKM M A RY ML4800 Power Factor Correction and PWM Controller Combo GENERAL DESCRIPTION FEATURES TheM L 4 8 0 0 is a c o n tro lle rib rp o w e r ia c tD r c o r te c te d , a»i itch ed m o d e pow e r s u p p lie s . Pow e r F a c to r C o rtectio n
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Untitled
Abstract: No abstract text available
Text: R wduit Electrical Group R eel Sm t“In sta lla tio n r a R e q u ire m e n t C h a rt — C D -8 00 D ie Insert S e r ie s CA-800 Applicator Die Inserts The following chart is for general reference. All tooling information, including crimp shut height dimension, is included on the product reel label.
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CA-800
TA13722A01
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Untitled
Abstract: No abstract text available
Text: 1000 pFj 2K V PINS 4&5 o- ELECTRICAL SPECIFICATIONS* NDTES 1.0 TURNS RATIO P 8 -P 6 -P 7 i ( J 6 - J 3 ) (P S -P 3 -P D ! C J2-J1) 2.0 INDUCTANCE (P 7 -P 8 ) 1,0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, ! 1CT i 1± 3 / 1CT i 1 ± 37. 350uH MIN. @ 0,1V , lOOKHz, 8mA DC Bias
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350uH
CT660100X2
SI-10016
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J1 3009-2
Abstract: DC/J1 3009-2 0/J1 3009-2
Text: LDWER ROW 1000PF, 2KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P1-P2-P3 i (J1-J2) (P 4 -P 5 -P 6 ) i CJ3-J6) 2.0 INDUCTANCE CP6-P5) (P2-P1) 3.0 LEAKAGE INDUCTANCE P6-P5 (WITH J6 AND J3 SHORT) P2-P1 (WITH J2 AND J1 SHORT) 4.0 INTERVINDING CAPACITANCE <P6,P5,P4) TO <J6,J3)
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1000PF,
350uH
CT720183
J1 3009-2
DC/J1 3009-2
0/J1 3009-2
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Untitled
Abstract: No abstract text available
Text: L D V E R ROW ELECTRICAL SPECIFICATIONS* 1.0 TURNS RATID P1-P2-P3 i (J1 -J2 ) (P 4 -P 2 -P 6 ) i ( J 3 - J 6 ) 2.0 INDUCTANCE (P 6-P 4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P2,P4) TD <J6 ,J3 )
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350uH
CT720183
SI-30099
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Untitled
Abstract: No abstract text available
Text: 1CT : 1CT SHIELD GROUND NDTES 1,0 PIN S WITHEUT E L E C T R I C A L CONNECTION ARE EMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TU RNS RATIO: P 4 - P 5 - P 6 : ( J 3 - J 6 (P 3 -P 2 -P 1 ) : (J1 -J2 1 CT : 1 CT + 3 % 1 CT : 1 CT + 3 % 2.0 INDUCTANCE: 3 5 0 uH
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350uH
100KHz,
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Untitled
Abstract: No abstract text available
Text: SHIELD lOOOpF j 2 K V o- ELECTRICAL SPECIFICATIONS' NDTES 1.0 TURNS RATIO P 6 -P 5 -P 4 : ( J 6 - J 3 ) (P 3 -P 2 -P 1 ) : (J 2 -J 1 ) 1,0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED, 1CT : 1CT± 37. 1CT . 1CT ± 37. 2,0 INDUCTANCE (P 6 -P 5 -P 4 ) 350 uH MIN, @ 0,1V, 100KHz; 8nA DC Bias
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100KHz;
I-60003
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Untitled
Abstract: No abstract text available
Text: lOOOpFj 2 K V 1 : 1 1 : 1 ELECTRICAL SPECIFICATIONS' NDTES 1.0 TURNS RATIO P 6 - P 5 - P 4 : ( J 6 - J 3 ) 1CT : 1CT ± 37. (P 3 -P 2 -P 1 ) : (J 2 - J 1 ) 1CT . 1CT ± 37. 2,0 INDUCTANCE (P 6 -P 4 ) 1,0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED,
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350uH
100KHz;
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Untitled
Abstract: No abstract text available
Text: LDWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P1-P2-P3 i (J1 -J2 ) (P 4 -P 5 -P 6 ) i C J3 -J6 ) 2.0 INDUCTANCE CP6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHORT) 4.0 INTERVINDING CAPACITANCE <P6,P5,P4) TO <J6 ,J3 )
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350uH
CT720183
SI-30084
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j1 3003
Abstract: No abstract text available
Text: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS; 1.0 TURNS RATIO P 6 -P 5 -P 4 ì (J6 -J3 ) (P3-P2-P1) • (J2 -J1 ) 2,0 INDUCTANCE (P 6 -P 5 -P 4 ) NOTES 1,0 PINS WITHDUT ELEC TR IC A L CDNNECTIDN ARE DMITTED, 1CT ! 1CT+ 3 / 1CT • 1.41CT ± 3 / 350uH MIN, @ 0,1V , lOOKHz, 8nA DC Bias
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350uH
CT720034X1
SI-4O235
j1 3003
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SI-40239
Abstract: No abstract text available
Text: lOOOpF j 2 K V PINS 48,5 o ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO <P8-P6-P7> i J1-J2 (P2-P3-P1) i <J3-J6> 2.0 INDUCTANCE CP7-P8) 1.0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, 1 1CT I 1± 3 / I 1CT I 1 ± 37. 1 350uH MIN, @ 0.1V , lOOKHz, 8nA DC Bias
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350uH
CT720034X1/24-001302
SI-4Qg39r01
SI-40239
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Untitled
Abstract: No abstract text available
Text: .OOluF , 2 K V NOTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P 6 - P 5 - P 4 i ( J 6 - J 3 ) (P 2 -P 5 -P 1 ) ! ( J 2 - J 1 ) 2.0 INDUCTANCE (P 3 -P 1 ) (J 3 -J 6 ) 2CT : 1 1.0 P I N S W I T H O U T E L E C T R I C A L CONNECTION ARE OMITTED, . ± 37
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350uH
SI-40204
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Untitled
Abstract: No abstract text available
Text: PINS lOOOpF 4 & 5 o- j 2KV ELECTRICAL SPECIFICATIONS* NDTES 1.0 TURNS RATIO P 8 -P 6-P 7 i (J 6 -J 3 ) (P S -P 3-PD ! CJ2-J1) 2.0 INDUCTANCE (P 7-P8) 1,0 P I N S W I T H D U T E L E C T R I C A L C D N N EC TID N A R E DM ITTED, ì 1CT 1 1± 3/ 1CT I 1 ± 37.
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350uH
CT720035X1/24-001701
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Untitled
Abstract: No abstract text available
Text: PINS lOOOpF 4 & 5 o- j 2KV ELECTRICAL SPECIFICATIONS* NDTES 1.0 TURNS RATIO P 8 -P 6-P 7 i (J 6 -J 3 ) (P S -P 3-PD ! CJ2-J1) 2.0 INDUCTANCE (P 7-P8) 1,0 P I N S W I T H D U T E L E C T R I C A L C D N N EC TID N A R E DM ITTED, ì 1CT 1 1± 3/ 1CT I 1 ± 37.
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350uH
CT720035X1/24-001701
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Untitled
Abstract: No abstract text available
Text: 1CT I 1CT TD+ TD- RCT lOOOpF, J1 J2 J3 TX- J4 J5 J6 J7 J8 RX- TX+ RX+ 2KV ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO P 4 - P 5 - P 6 : ( J 3 - J 6 ) (P 3 -P 2 -P 1 ) : ( J 1 - J 2 ) 1,0 PINS WITHOUT E LE CTR IC AL CONNECTION ARE OMITTED, 1CT : 1CT± 37.
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350uH
SI-70001
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