1N4728A - 1N4752A
Abstract: zener 1N4752A 1N4700A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
Text: Absolute Maximum Ratings* Tolerance: A = 5% TA = 25°C unless otherwise noted P a ra m e te r V a lu e U n its -6 5 to + 2 0 0 °C M a x im u m J u n c tio n O p e ra tin g T e m p e ra tu re + 200 °C L e a d T e m p e ra tu re 1 /1 6 ” fro m c a s e fo r 1 0 s e c o n d s
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Untitled
Abstract: No abstract text available
Text: E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ2222A
SC70-6
SOIC-16
FFB2222A
FMB2222A
FMB2222A
FFB2222A
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FFB2222A
Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16
Text: E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ2222A
SC70-6
SOIC-16
FFB2222A
FMB2222A
FMB2222A
FFB2222A
MMPQ2222A
SC70-6
SOIC-16
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supersot 6 TE
Abstract: Supersot 6
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor
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FMB1020
300mA.
100uA
100mA
150mA
100MHz
100uA,
200mA,
supersot 6 TE
Supersot 6
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supersot 6 TE
Abstract: No abstract text available
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor
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FMB3946
100mA
100MHz
100uA,
supersot 6 TE
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Untitled
Abstract: No abstract text available
Text: J u ly 1 9 9 6 N NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese N -C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS
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NDS331N
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B4t diode surface mount
Abstract: C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3
Text: J u ly 1 9 9 6 N ational < ß Semiconductor" NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode po w e r fie ld effect tran sisto rs are produced using Nationals proprietary, high cell density, DMOS
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NDS331N
bS0113G
B4t diode surface mount
C05S
702 TRANSISTOR sot-23
S-108
NDS331N
supersot-3
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Untitled
Abstract: No abstract text available
Text: KSD2058 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -22 0 F ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol 60 V C ollector E m itter Voltage VcEO 60 V Em itter Base Voltage V ebo 7
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KSD2058
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d872
Abstract: SSOT-6 CBVK741B019 F63TNR FDC5612
Text: FDC5612 May 1999 FAIRCHILD EM I C O N D U C T O R tm FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N -C h a n n e l M O S F E T has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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FDC5612
d872
SSOT-6
CBVK741B019
F63TNR
FDC5612
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Untitled
Abstract: No abstract text available
Text: LM336-2.5/B/LM236-2.5 KA336-2.5, KA236-2.5 PROGRAMMABLE SHUNT REGULATOR PROGRAMMABLE SHUNT REGULATOR T h e L M 3 3 6 -2 .5 /B in te g ra te d C irc u its a re p re c is io n 2 .5 V s h u n t re g u la to rs . T h e m o n o lith ic 1C v o lta g e re fe re n c e s o p e ra te s a s a lo w
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LM336-2
5/B/LM236-2
KA336-2
KA236-2
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.
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SS9012
-500mA)
S9013
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Untitled
Abstract: No abstract text available
Text: POWER RECTIFIER SDS06U150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=120nS Low VF in Turn on (VF=1,4V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS06U150S
120nS)
50units
D06U150S
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Untitled
Abstract: No abstract text available
Text: D iscrete POWER & Signal Technologies 1R O H I 1ILtQI ^ M IC W J C R J C T D P i m MPS8550 C TO-92 BE PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier appli cations at collector currents to 500 mA. Sourced from Process 60.
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MPS8550
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm BC817-25 BC817-40 Mark: 6B./6C. NPN General Purpose Amplifier T his device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum RâtinÇjS
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BC817-25
BC817-40
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2N5486
Abstract: BF5484 2n5485 2N5484 transconductance 2N5485
Text: M IC Ü N D U C T Q R ^ MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 Mark: 6B / 6M / 6H N-Channel RF Amplifier T his device is designed prim arily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.
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2N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
2N5486
BF5484
transconductance 2N5485
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Untitled
Abstract: No abstract text available
Text: MBR3035PT F A IR C H IL D SEM IC O N D U C TO R MBR3035PT - MBR3060PT Lo w p o w e r loss, h ig h e ffic ie n c y . 0.245 6.2 0.225(5.7) High s u rg e capacity. 0.323(8.2) 0.313(7.9) 0.078(1.98 ^ iO0 ^ - " r For use in lo w vo lta g e , high fre q u e n c y
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MBR3035PT
MBR3035PT
MBR3060PT
O-247AD
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm ES3A - ES3D Features • 0 .2 8 0 7.112 0.260 (6 .604 ) For surface mount applications. ^ • Glass passivated junction. • Low profile package. ^ j j r • Easy pick and place. • Built-in strain relief. S M C /D O -2 1 4 A B
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm 1N957B - 1N973B Series Half Watt Zeners Absolute Maximum Ratings* Tolerance: B = 5% / - S T A = 2 5°C unless o th e rw ise noted Parameter Value Units -65 to +200 Maximum Junction Operating Temperature
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1N957B
1N973B
DO-35
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NDC7003P
Abstract: 034A
Text: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDC7003P
bSD113D
NDC7003P
034A
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm BCW68G Mark: DG PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted
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BCW68G
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2n5087
Abstract: 2N5086 BT5086 2N5087 equivalent
Text: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.
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2N5086
MMBT5086
2N5087
MMBT5087
2N5087
OT-23
BT5086
2N5087 equivalent
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 1.7 A, 60 V. to improve the overall efficiency of DC/DC converters using Rds on = 0.100 £1 @ V GS = 10 V
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FDN5630
effi91
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KSA539
Abstract: KSA542
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA539 LOW FREQUENCY AM PLIFIER • Complement to KSC8I5 • Collector-Base Voltage V Cbo = -60V • Collector Dissipation Pc = 400mW ABSO LU TE MAXIMUM RATINGS TA=25TC C haracteristic Rating Unit V cbo VcEO V ebo lc Pc Tj
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KSA539
400mW
-100jÃ
-10mA,
KSA539
KSA542
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Ksp44 data
Abstract: KSP44
Text: NPN EPITAXIAL SILICON TRANSISTOR KSP44/45 HIGH VOLTAG E TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =625m W ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage
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KSP44/45
KSP44:
KSP45:
KST44
KST45
Ksp44 data
KSP44
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