supersot 6 TE
Abstract: Supersot 6
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor
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FMB1020
300mA.
100uA
100mA
150mA
100MHz
100uA,
200mA,
supersot 6 TE
Supersot 6
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supersot 6 TE
Abstract: No abstract text available
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor
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FMB3946
100mA
100MHz
100uA,
supersot 6 TE
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Untitled
Abstract: No abstract text available
Text: KSD2058 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -22 0 F ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol 60 V C ollector E m itter Voltage VcEO 60 V Em itter Base Voltage V ebo 7
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KSD2058
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Untitled
Abstract: No abstract text available
Text: LM336-2.5/B/LM236-2.5 KA336-2.5, KA236-2.5 PROGRAMMABLE SHUNT REGULATOR PROGRAMMABLE SHUNT REGULATOR T h e L M 3 3 6 -2 .5 /B in te g ra te d C irc u its a re p re c is io n 2 .5 V s h u n t re g u la to rs . T h e m o n o lith ic 1C v o lta g e re fe re n c e s o p e ra te s a s a lo w
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LM336-2
5/B/LM236-2
KA336-2
KA236-2
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.
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SS9012
-500mA)
S9013
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Untitled
Abstract: No abstract text available
Text: POWER RECTIFIER SDS06U150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=120nS Low VF in Turn on (VF=1,4V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS06U150S
120nS)
50units
D06U150S
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm BC817-25 BC817-40 Mark: 6B./6C. NPN General Purpose Amplifier T his device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum RâtinÇjS
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BC817-25
BC817-40
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2N5486
Abstract: BF5484 2n5485 2N5484 transconductance 2N5485
Text: M IC Ü N D U C T Q R ^ MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 Mark: 6B / 6M / 6H N-Channel RF Amplifier T his device is designed prim arily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.
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2N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
2N5486
BF5484
transconductance 2N5485
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm ES3A - ES3D Features • 0 .2 8 0 7.112 0.260 (6 .604 ) For surface mount applications. ^ • Glass passivated junction. • Low profile package. ^ j j r • Easy pick and place. • Built-in strain relief. S M C /D O -2 1 4 A B
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm 1N957B - 1N973B Series Half Watt Zeners Absolute Maximum Ratings* Tolerance: B = 5% / - S T A = 2 5°C unless o th e rw ise noted Parameter Value Units -65 to +200 Maximum Junction Operating Temperature
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1N957B
1N973B
DO-35
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NDC7003P
Abstract: 034A
Text: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDC7003P
bSD113D
NDC7003P
034A
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm BCW68G Mark: DG PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted
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BCW68G
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Untitled
Abstract: No abstract text available
Text: E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ2222A
SC70-6
SOIC-16
FFB2222A
FMB2222A
FMB2222A
FFB2222A
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2n5087
Abstract: 2N5086 BT5086 2N5087 equivalent
Text: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.
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2N5086
MMBT5086
2N5087
MMBT5087
2N5087
OT-23
BT5086
2N5087 equivalent
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Untitled
Abstract: No abstract text available
Text: IRFR/U310A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 3 .6 Q 1 .7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFR/U310A
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA709 HIGH VOLTAGE AMPLIFIER • Col lector-Base Voltage: V Cb o = -1 6 0 V • C ollector D issipation: Pc=8 0 0m W • C om plem ent to KSC 1009 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage
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KSA709
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Untitled
Abstract: No abstract text available
Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 3 5 0 V • C ollector D issipation: Pc m ax =625m W ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage
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2N6517
2N6515
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Untitled
Abstract: No abstract text available
Text: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at lc=60A) * High Input Impedance * Built in Fast Recovery Diode 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE
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SGL60N90DG3
O-264
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"Darlington Transistor"
Abstract: ksp25
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR T O -92 • C ollector-E m itter Voltage: V Ces= K S P 2 5 : 4 0 V KSP26: 50V KSP27: 60V • C ollector D issipation: P c m a x =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic
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KSP25/26/27
KSP26:
KSP27:
KSP25
KSP26
KSP27
"Darlington Transistor"
ksp25
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Untitled
Abstract: No abstract text available
Text: KSA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER S O T-23 • C om plem ent to KSC 1623 • Col lector-Base Voltage: VCbo= -60V A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage
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KSA812
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR 2N6516 HIGH VOLTAG E TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 3 0 0 V • C ollector D issipation: Pc m ax =625m W ABSO LU TE M AXIMUM RATINGS (TA=25°C) Characteristic Symbol Col lector-Base Voltage
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2N6516
2N6515
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LL600
Abstract: No abstract text available
Text: M IC D N D U C T O R i FDH / FDLL 600 C O L O R B A N D M A R K IN G D E V IC E FD LL600 1ST BAND RED 2N D BAND W H IT E LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO -35 High Conductance Ultra Fast Diode
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FDH600
FDLL600
LL600
LL-34
BD1201-1205
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 1N746A-1N759A D iscrete POWER & Sign al Technologies F A IR C H IL D tm 1N746A - 1 N759A Series Half Watt Zeners Tolerance: A = 5% T A = 2 5°C unless o th e rw ise noted / Parameter Value Units -65 to +200 Maximum Junction Operating Temperature
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1N746A-1N759A
1N746A
N759A
DO-35
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Untitled
Abstract: No abstract text available
Text: FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter
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FMBM5401
FMBM5401
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