Contextual Info: S D -7 3 1 0 0 -0 0 3 3 M ATERIALS AND FINISHES BODY BRASS P LA TED NICKEL CENTER CONTACT PHOSPHOR BRONZE P LA TED GOLD INSULATOR TEFLON FERRULE BRASS P LA TED NICKEL CABLE ATTACHMENT: CENTER CONTACT CRIMP HEX.:1.69> OUTER CONDUCTOR— CRIMP(HEX.:5.41 PACKAGING: INDIVIDUAL PLASTIC BAGS

Contextual Info: S D -7 3 2 5 7 -5 0 0 1 1.244 ±.016 MATERIALS AND FINISHES BODY BRASS CONNECTOR INTERFACE P LA TED NICKEL PER MOLEX STANDARD P S -7 3 5 9 9 -0 0 0 0 CENTER CONTACT BRASS P LA TED SILVER INSULATOR TEFLON .120 *.ooi 3.05 SLEEVE,NUT BRASS *0.03 P LA TED NICKEL

mmcx-j

Contextual Info: SD -73415-096 MATERIALS AND FINI5HES: BODY BRA5S PLA TED GOLD CONTACT BERYLLIUM COPPER P LA TED GOLD INSULATOR TEFLON 014 .35 f I / \ .108 2.75 .138 3.50 7 3 4 1 5 -0 9 6 3 PER COMMERCIAL REQUIREMENTS LEADS ORIENTED TOWARDS FEED HOLES 7 3 4 1 5 -0 9 6 2

C4001

Abstract: S13-146
Contextual Info: 1 MEGABIT 1024KX 1-BIT CMOS STATIC RAM SIP MODULE PRELIMINARY IDT 7MC4001 FEATURES: DESCRIPTION: • H ig h -de n slty 1 m e g a b it (1024K x 1) C M O S sta tic RAM m odule • Surface m o un ted LCC c o m p o n e n ts m o un ted o n a co-fired c e ra m ic substrate

SSF-LXH250IGD

Abstract: SSL-LX509F3GD
Contextual Info: UNCONTROLLED DOCUMENT REV. PA R T N U M B ER REV. S S F -L X H 2 5 0 IG D C E .C .N . N U M B E R AND REV ISIO N COMM ENTS DATE A U PD A TED S P E C S . 1-20-95 B U PD A TED 5-23-95 C E .C .N . #104-96. & DIMS. #10BRDR & REDRAW N. ELECTRO -OPTICAL CHARACTERISTICS Ta =25'C

Contextual Info: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name

murata diplexer

Abstract: HP8594E LDC21897M19D-078 PF08107B LDC21897M19D POWER AMPLIFIER CIRCUIT DIAGRAM 10000 LTC4400 LTC4400-1 LTC4401 LTC4401-1
Contextual Info: DESIGN FEATURES ThinSOT RF Power Controllers Save Critical Board Space and Power in Portable RF Products by Ted Henderson and Shuley Nakamura Introduction The LTC4400-1 and LTC4401-1 provide RF power controller solutions for the latest cellular telephones. They

AN83001

Abstract: daily production report sheet P2T-18 MSP2TA-18XL n12090 MSP2T-18 MSP2T-18XL 1000Life
Contextual Info: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name

Contextual Info: EMI/RFI Ferrite Filtered Connector Series 400 SPECTRUM CONTROL Performance Features Impedance ohms • Superior filtering of high frequency interference ted ■ Low cost, high performance ferrite filter - s| so — Inner Contacts 28 ■ Prevents common-mode noise in signal

murata mqe001

Abstract: murata MQE001-902 MQE001 MQE001-902 murata vco MQE-001-902 VCO MQE001 vco with low power supply vco murata MQE0
Contextual Info: DESIGN IDEAS Low Noise Boost VCO Power Supply for Portable Applications by Ted Henderson Introduction Many portable RF products use voltage controlled oscillators VCOs to generate the RF carrier frequency. These applications often require low noise VCO power supply voltages that

AN2393

Abstract: CYPRESS an2233a AN2233 abstract of Touch screen sensor Finger Sensor AN2041 CYPRESS an2393
Contextual Info: Application Note AN2393 Migrating from CSR to CSA Author: Ted Tsui Associated Project: No Associated Part Family: CY8C20x34, CY8C21x34, CY8C24x94 Software Version: PSoC Designer 4.3 w/CY8C20x34 Extension Pack Associated Application Notes: AN2233a, AN2041 Abstract

S726

Abstract: PWS725/726 PWS726
Contextual Info: PWS725 / 726 ^ PWS725 / PWS726 B U R R -B R O W N I b b | Isolated, Unregulated DC/DC CONVERTERS FEATURES • PR O TEC TED AGAIN ST O U T P U T FA U LTS • IS OLA TED ± 7 TO ± I8 V D C O U T P U T FROM S IN G LE 7 TO 1BVDC SU PPLY • COM PACT • ± 15 m A O U T P U T AT RATED VOLTAGE ACCURACY

chang aluminum capacitor

Contextual Info: GOLD: A STRATEGIC CHOICE! by Ted Johansson and Jim Curtis Introduction The purpose of this paper is to discuss advantages and disadvantages of gold metallization used on RF-power devices, and its impact on device performance and reliability from a user’s perspective. The paper

TRANSISTOR cBC 415

Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
Contextual Info: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details

TRF1070

Contextual Info: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA8701AN SILICON MONOLITHIC PIF I SIF + ATT IC FOR T V/ VT R FEATURES PIF section • RF-Pre Amp. less by high input sensitivity • 3-Stage IF amplifier with variable gain

Contextual Info: 256K 256K x 1-BIT C M O S STATIC RAM SIP M O DULE IDT7MC156 FEATURES: DESCRIPTION: • H ig h -de n sity 256K (256K x 1) C M O S sta tic RAM m odule • S urface m o un ted LCC co m p o n e n ts m o un ted o n a co -fired c e ra m ic substrate • A va ila b le in low p rofile 28-p in c e ra m ic SIP (single In-line

Contextual Info: F-207 ELEV A TED R F C O N N E C TO R iiRiksTRF SPECIFICATIONS For complete specifications see www.samtec.com?ESRF Insulator Material: Black LCP Contact Material: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni RF Connector: Brass with Teflon Operating Temp Range:

Contextual Info: F-206-1 ELEV A TED R F C O N N EC TO R iiRiksTRF For complete specifications see www.samtec.com?ETRF Insulator Material: Black LCP Terminal Material: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni RF Connector: Brass with Teflon Operating Temp Range:

Contextual Info: IN TEG R A TED C IR C U ITS SC26C92 Dual universal asynchronous receiver/transmitter DUART Product specification Supersedes data of 1998 Sep 04 IC19 Data Handbook Philips Semiconductors 1998 Nov 09 PHILIPS PHILIPS Philips Semiconductors Product specification

Contextual Info: IN TEG R A TED CIR C U ITS SA8016 2.5GHz low voltage fractional-N synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 16 PHILIPS Objective specification Philips Semiconductors 2.5GHz low voltage fractional-N synthesizer

RF1K49221

Abstract: s2a15 ST9141A1002 AN9321 AN9322 MS-012AA AN7254 RF1K4922196 TB334
Contextual Info: RF1K49221 Data Sheet Title F1K 221 bt 5A, V, 30 m, D ted, al Cha el FET wer OST) utho August 1999 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET Features The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

TED 2411

Abstract: dc-dc ted 1221 power dip 1222 smd NE
Contextual Info: DC/DC-Converter TED Series 2Watt • 2:1 wide input range • No derating up to +75°C • Metal case for good RFI-shielding • Short circuit protection • High efficiency up to 78% • Regulated outputs • Dual output models with separated outputs • 24-pin DIP with industry standard

TC518129

Contextual Info: IN TEG RA TED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518129 CPL / CFWL / CFTL - 70, TC518129 CPL / CFWL / CFTL - 80 TC518129 CPL / CFWL / CFTL -10, TC518129 CPL / CFWL / CFTL - 70L TC518129 CPL / CFWL / CFTL - 80L, TC518129 CPL / CFWL / CFTL -1 0L

Contextual Info: INDEX OF THIN FILM PRODUCTS COVER SHEET - THIN FILM DIVISION LEADS THE W AY WA INDEX OF THIN FILM PRODUCTS PROCESS CAP ABILITIES CAPABILITIES MSIRP RELIABILITY PROGRAM MSDR 3 SERIES DUAL RESISTOR NETWORKS MSIR 3 SERIES DUAL ISOLA TED RESISTOR NETWORKS ISOLATED