18 marking RF power amplifier
Abstract: amplifier marking 365 AN1235 AN1751 STPAC02 STPAC02F1 DIODE RF DETECTOR ipad Diagram
Text: STPAC02F1 IPAD TM RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION MAIN PRODUCT CHARACTERISTICS 0.8 to 2.5GHz frequency range Detection diode voltage drop compensation Temperature compensation Fast response time Low Power consumption
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STPAC02F1
STPAC02F1
18 marking RF power amplifier
amplifier marking 365
AN1235
AN1751
STPAC02
DIODE RF DETECTOR
ipad Diagram
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AN1235
Abstract: AN1751 JESD97 STPAC02 STPAC02F1 STPAC02F2 DIODE marking le st
Text: STPAC02F2 IPAD RF Detector for power amplifier control with internal temperature compensation Main product characteristics • 0.8 to 2.5 GHz frequency range ■ Detection diode voltage drop compensation ■ Temperature compensation ■ Fast response time
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STPAC02F2
STPAC02F2
AN1235
AN1751
JESD97
STPAC02
STPAC02F1
DIODE marking le st
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rf designer
Abstract: AN1235 AN1751 JESD97 STPAC02 STPAC02F1 STPAC02F2
Text: STPAC02F2 IPAD RF Detector for power amplifier control with internal temperature compensation Main product characteristics • 0.8 to 2.5 GHz frequency range ■ Detection diode voltage drop compensation ■ Temperature compensation ■ Fast response time
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STPAC02F2
STPAC02F2
rf designer
AN1235
AN1751
JESD97
STPAC02
STPAC02F1
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amplifier marking 365
Abstract: AN1235 AN1751 STPAC02 STPAC02F1
Text: STPAC02F1 IPAD TM RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION MAIN PRODUCT CHARACTERISTICS • ■ ■ ■ ■ ■ ■ 0.8 to 2.5GHz frequency range Detection diode voltage drop compensation Temperature compensation Fast response time
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STPAC02F1
STPAC02F1
amplifier marking 365
AN1235
AN1751
STPAC02
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Untitled
Abstract: No abstract text available
Text: Application Note #003 Thermopad Amplifier Temperature Compensation The Thermopad is an absorptive microwave attenuator which provides power dissipation that varies with temperature. It is extremely useful as a temperature compensating element. For example, a very common
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GSM900
Abstract: No abstract text available
Text: AWT6223R WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control Data Sheet - Rev 2.0 features InGaP HBT Technology Optimized for a 50 System Internal Reference Voltage Integrated GSM/EDGE Power Control with Temperature Compensation
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AWT6223R
GSM850/900
GSM900
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Untitled
Abstract: No abstract text available
Text: AWT6223R WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control FEATURES • • • • InGaP HBT Technology Optimized for a 50 Ω System Internal Reference Voltage Integrated GSM/EDGE Power Control with Temperature Compensation •
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GSM850/900
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Untitled
Abstract: No abstract text available
Text: AWT6225R WCDMA/GSM/GPRS Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - REV 1.0 FEATURES • • • • InGaP HBT Technology Optimized for a 50 Ω System Internal Reference Voltage Integrated GSM/GPRS Power Control with Temperature Compensation
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AWT6225R
GSM850/900
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UA748
Abstract: UA748CN LM101A UA748C UA748I UA748M
Text: UA748 PRECISION SINGLE OPERATIONAL AMPLIFIER . . . . . . . INPUT OFFSET VOLTAGE : 3mV max. OVER TEMPERATURE FREQUENCY COMPENSATION WITH A SINGLE 30pF CAPACITOR C1 OPERATION FROM ±5V to ±15V LOW POWER CONSUMPTION : 50mW AT ±15V CONTINUOUS SHORT-CIRCUIT PROTECTION
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UA748
LM101A
UA748C
UA748I
-40oC,
105oC
UA748M
-55oC,
125oC
UA748CN
UA748
UA748CN
LM101A
UA748C
UA748I
UA748M
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sanken SAPM01P
Abstract: sapm01p SAPM01 sanken SAP 61432 M01N SAPM01N G746 SC102 YG6260
Text: SAPM01N １ Scope The present specifications shall apply to Sanken silicon power MOSFET with built-in temperature compensation diodes, SAPM01N, a complementary device of the SAPM01P, for audio amplifier applications. ２ Appearance and outline drawings ２-１ Appearance
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SAPM01N
SAPM01N,
SAPM01P,
251shot
00E-04
00E-03
00E-02
00E-01
SSE-22334
sanken SAPM01P
sapm01p
SAPM01
sanken SAP
61432
M01N
SAPM01N
G746
SC102
YG6260
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DA9142
Abstract: MAS9142AUA1-T BAT62 DCS1800 GSM900 PF08103B TSSOP16 BST100 CAPC100
Text: DA9142.002 4 January, 2002 MAS9142 Power Amplifier Controller PAC and 2.8 V, 50 mA LDO Voltage Regulator • Temperature Compensation of Sensor Signal • Bias Current Source for Detector Diodes • Applicable for a Wide Range of Power Amplifiers • Low Noise LDO Regulator Included
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DA9142
MAS9142
MAS9142
GSM900
DCS1800
PF08103B
MAS9142,
MAS9142AUA1-T
BAT62
GSM900
TSSOP16
BST100
CAPC100
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circuit diagram for automatic voltage regulator
Abstract: DA9142 BAT62 DCS1800 GSM900 JESD22-A113 PF08103B TSSOP16 hitachi pf08103b marking B PAC RF
Text: DA9142.003 28 January, 2004 MAS9142 Power Amplifier Controller PAC and 2.8 V, 50 mA LDO Voltage Regulator • Temperature Compensation of Sensor Signal • Bias Current Source for Detector Diodes • Applicable for a Wide Range of Power Amplifiers • Low Noise LDO Regulator Included
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DA9142
MAS9142
MAS9142
GSM900
DCS1800
PF08103B
MAS9142,
circuit diagram for automatic voltage regulator
BAT62
GSM900
JESD22-A113
TSSOP16
hitachi pf08103b
marking B PAC RF
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UA748
Abstract: UA748CN LM101A UA748C UA748I UA748M m7575
Text: UA748 PRECISION SINGLE OPERATIONAL AMPLIFIER • INPUT OFFSET VOLTAGE : 3mV max. OVER TEMPERATURE ■ FREQUENCY COMPENSATION WITH A SINGLE 30pF CAPACITOR C1 ■ OPERATION FROM ±5V to ±15V ■ LOW POWER CONSUMPTION : 50mW AT ±15V ■ CONTINUOUS SHORT-CIRCUIT PROTEC-
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UA748
LM101A
UA748
UA748CN
LM101A
UA748C
UA748I
UA748M
m7575
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UA748
Abstract: No abstract text available
Text: UA748 PRECISION SINGLE OPERATIONAL AMPLIFIER • INPUT OFFSET VOLTAGE : 3mV max. OVER TEMPERATURE ■ FREQUENCY COMPENSATION WITH A SINGLE 30pF CAPACITOR C1 ■ OPERATION FROM ±5V to ±15V ■ LOW POWER CONSUMPTION : 50mW AT ±15V ■ CONTINUOUS SHORT-CIRCUIT PROTEC-
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UA748
LM101A
UA748
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9893 f
Abstract: LM2904AWYPT
Text: LM2904W, LM2904AW Low power dual operational amplifier Datasheet — production data Features • Frequency compensation implemented internally ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current/op (500 µA per
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LM2904W,
LM2904AW
9893 f
LM2904AWYPT
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Untitled
Abstract: No abstract text available
Text: Hall ICs DN6847/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN6847 2.0±0.2 (1.0) In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single
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DN6847/SE/S
DN6847
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DN6848
Abstract: DN6848-SE-S DN6848S DN6848SE 175 hall sensor KEYBoard magnetic sensor
Text: Hall ICs DN6848/SE/S Wide operating temperature range −40°C to +100°C One-way magnetic field operation Unit: mm DN6848 (1.0) 0.55±0.15 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single
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DN6848/SE/S
DN6848
DN6848
DN6848-SE-S
DN6848S
DN6848SE
175 hall sensor
KEYBoard magnetic sensor
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Untitled
Abstract: No abstract text available
Text: Hall ICs DN6849/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN6849 2.0±0.2 (1.0) In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single
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DN6849/SE/S
DN6849
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DN8899
Abstract: DN8899S DN8899SE
Text: Hall ICs DN8899/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8899 (1.0) 0.55±0.15 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single
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DN8899/SE/S
DN8899
DN8899
DN8899S
DN8899SE
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Diode IN 5404
Abstract: No abstract text available
Text: Hall ICs DN6848/SE/S Wide operating temperature range −40°C to +100°C One-way magnetic field operation Unit: mm DN6848 (1.0) 0.55±0.15 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single
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DN6848/SE/S
DN6848
SSIP003-P-0000A
Diode IN 5404
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE 003 - THERMOPAD* AMPLIFIER TEMPERATURE COMPENSATION The Thermopad is an absorptive microwave attenuator which provides power dissipation that varies with temperature. It is extremely useful as a temperature compensating element. For example, a very common problem with GaAs amplifiers is that the gain of the amplifier varies by
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8 PIN pin diode attenuator
Abstract: No abstract text available
Text: APPLICATION NOTES APPLICATION NOTE 003 - THERMOPAD AMPLIFIER TEMPERATURE COMPENSATION The Thermopad is an absorptive microwave attenuator which provides power dissipation that varies with temperature. It is extremely useful as a temperature compensating element. For example, a very common problem with GaAs amplifiers is that the gain of the amplifier varies by
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTES APPLICATION NOTE 003 - THERMOPAD AMPLIFIER TEMPERATURE COMPENSATION The Thermopad is an absorptive microwave attenuator which provides power dissipation that varies with temperature. It is extremely useful as a temperature com pensating element. For example, a very common problem with GaAs amplifiers is that the gain of the amplifier varies by
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Untitled
Abstract: No abstract text available
Text: Tecimol&pi Thermopad Amplifier Temperature Compensation Application N otes A pplication N o te 001 Thermopad® A m plifier Tem perature Com pensation The Thermopad is an absorptive microwave attenuator which provides power dissipation that varies with temperature. It is extremely useful as a temperature com pensating element. For example, a very common problem
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