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    TEN 4623 Search Results

    TEN 4623 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    M100 Coilcraft Inc Designer's Kit, Slot Ten RF inductors, not RoHS Visit Coilcraft Inc Buy
    AFE539F1RTERQ1 Texas Instruments Automotive single-channel ten-bit smart AFE with PWM active discharge control 16-WQFN -40 to 125 Visit Texas Instruments

    TEN 4623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEN 4623

    Abstract: RS-423 S23LC05-G S23LC12-G S23LC15-G S23LC24-G
    Text: S23LC03-G thru S23LC24-G SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4623, REV. - Green Products TVS ARRAY SERIES FEATURES SOT-23 ü Protects 3.3, 5, 12, 15, 24 V Components ü Unidirectional ü Ultra Low Capacitance 3 pF ü Low Leakage ü Provides Electrically Isolated Protection


    Original     		PDF S23LC03-G S23LC24-G OT-23 OT-23 S23LCXX-G TEN 4623 RS-423 S23LC05-G S23LC12-G S23LC15-G S23LC24-G

    Untitled

    Abstract: No abstract text available
    Text: 2-Channel, 256-Position Digital Potentiometer AD5207 a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V Dual Supply 3-Wire SPI-Compatible Serial Data Input


    Original     		PDF 256-Position AD5207 256-Position, 14-Lead RU-14) C01885â

    ct Potentiometer

    Abstract: Fixed resistor AD5235 10K POTENTIOMETER 10 turn dual AD5207 AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100
    Text: a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V Dual Supply 3-Wire SPI-Compatible Serial Data Input Midscale Preset During Power-On 2-Channel, 256-Position


    Original     		PDF 256-Position, 256-Position AD5207 AD5207 SOL-24, TSSOP-24 14-Lead RU-14) C01885 ct Potentiometer Fixed resistor AD5235 10K POTENTIOMETER 10 turn dual AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100

    AD5207

    Abstract: AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100 OP42 RU-14 AD5235
    Text: a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V Dual Supply 3-Wire SPI-Compatible Serial Data Input Midscale Preset During Power-On 2-Channel, 256-Position


    Original     		PDF 256-Position, 256-Position AD5207 AD5207 duSOL-24, TSSOP-24 14-Lead RU-14) C01885 AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100 OP42 RU-14 AD5235

    Untitled

    Abstract: No abstract text available
    Text: RF2516 Preliminary  9+ 8+) 75$160,77 5 7\SLFDO $SSOLFDWLRQV • 315/433MHz Band Systems • Remote Keyless Entry • Local Oscillator Source • Wireless Security Systems • Part 15.231 Applications • AM/ASK/OOK Transmitter 3URGXFW 'HVFULSWLRQ -A- 0.157


    Original     		PDF RF2516 315/433MHz RF2516 16-pin QSOP-16

    100 kilo OHM potentiometer

    Abstract: 1 kilo ohm variable resistor RESISTOR 10 KILO OHM AB Electronics potentiometer 1 kilo ohm resistor specifications 20 kilo OHM potentiometer Schematic of 100K digital potentiometer 100 KILO OHM RESISTOR Variable resistor 50K ohm 3 pins Variable resistor 5K ohm
    Text: PRELIMINARY TECHNICAL DATA 2-Channel, 256 Position Digital Potentiometer a AD5207 FEATURES 256 Position, 2-Channel Potentiometer Replacement 10K, 50K, 100KΩ Power Shut Down-Less than 5µA Midscale Preset +2.7 to +5.5 Single-Supply ±2.7V Dual-Supply 3-Wire SPI Compatible Serial Data Input


    Original     		PDF AD5207 19APR 100 kilo OHM potentiometer 1 kilo ohm variable resistor RESISTOR 10 KILO OHM AB Electronics potentiometer 1 kilo ohm resistor specifications 20 kilo OHM potentiometer Schematic of 100K digital potentiometer 100 KILO OHM RESISTOR Variable resistor 50K ohm 3 pins Variable resistor 5K ohm

    HM-6551-9

    Abstract: HM6551-9 191te D3302 6551-8
    Text: HARRIS SEMICOND SECTOR IS DË| M302S71 DOlObSñ ñ^f~ ' H a r r i s H M Features • • • • • • • • • • • • - 6 256 X T -4 6 -2 3 -0 8 5 5 4 CMOS RAM Pinout TOP VIEW 5 0 |iW Max. L o w S ta n d b y P o w e r.


    OCR Scan     		PDF M302S71 T-46-23-08 HM-6551 20mW/MHz 220nsMax. HM-6551-5 HM-6551-9 HM-6551-8 HM-6551-9 HM6551-9 191te D3302 6551-8

    CTO 2267

    Abstract: A10C CY7C170A A11C
    Text: CYPRESS SEMICONDUCTOR MbE D T ^ 'iy o fe . £5 ’¡ r ES&^hhE QGObSEê S B C Y P • CYPRESS SEMICONDUCTOR CY7C170A 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • Highspeed — t*A = 15 ns — tACS = 10 ns • Low active power


    OCR Scan     		PDF CY7C170A CY7C170A CY7C170A-35DMB CY7C170Aâ 35KMB CY7C170A- CY7C170A-45DMB CY7C170A-45KMB CTO 2267 A10C A11C

    HD04

    Abstract: 32KX8 CYM1420HD-20C CYM1420PD-25C PD05
    Text: CYPRESS •4□e t> m SEMI CONDUCTOR ssñibbs ooGsaoT a eicyp 7 = Y ¿ -2 S -/* i CYM1420 CYPRESS SEMICONDUCTOR 128K x 8 Static RAM M odule Functional Description Features High-density 1-megabit SRAM module High-speed CMOS SRAMs — Access time of 20 ns 32-pin, 0.6-inch-wide DIP package


    OCR Scan     		PDF CYM1420 32-pin, CYM1420 YM1420PD-20C CYM1420HD-20C CYM1420PD-25C CYM1420HD-25C CYM1420PD-30C CYM1420HD-30C CYM1420HD-30MB HD04 32KX8 PD05

    814800

    Abstract: cr2927 814800S
    Text: FUJITSU LTD S3E » • 374<ì75b DDD34D3 ^ ci ci « F C A J c O May 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 8 0 0 A -70/-80/-10 CMOS 512KX.8 BIT FAST PAGE MODE D YNAMIC RAM CMOS 524,288 x 8 bit Fast Page Mode Dynamic RAM The Fujitsu MB814800Ais a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


    OCR Scan     		PDF DDD34D3 512KX MB814800Ais MB814800A 512x8-bits MB814800A-70/-80/-10 814800 cr2927 814800S

    ic 7442

    Abstract: 7442 ic 7442
    Text: 16 MEG DRAM DHE DRAM DIE 16 MEG DRAM M T4C 4M 4B 1D 21A FEATURES DIE OUTLINE Top View Single 5.0V pow er supply Industry-standard x4 timing and functions H igh-perform ance CMOS silicon-gate process All inputs and outputs are TTL- and CM OS-com patible Refresh m odes: RAS"ONLY, CAS‘- BEFO RE-RA S(CBR),


    OCR Scan     		PDF 150mm 309x676 849x17 113x113 ic 7442 7442 ic 7442

    TMS44C256

    Abstract: sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12
    Text: 0 ^ 1 7 5 5 007702=1 7 • TMS4C1024, TMS4C1025, TMS4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORIES TEXAS INSTR N PACKAGE TOP VIEW 1,048,676 x 1 Organization Single 5-V Supply (10% Tolerance) • ACCESS ACCESS ACCESS TIME TIME TIME TMS4C102-10 TMS4C102.-12


    OCR Scan     		PDF TMS4C1024, TMS4C1025, TMS4C1027 576-BIT 86-flE TMS4C102--10 TMS4C102 TMS4C1024--Enhanced TMS44C256 sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12

    SCT T

    Abstract: No abstract text available
    Text: RA MTRO N R a M V H E CORP D | 7555015 DGOGGEfc, FMx 801 FRAMTM T R Q N 1 I T - 4 6 -*3-57 256 x 1 Nonvolatile Static RAM c o r p o r a t io n Design Goal Specification Features 1Ferroelectronic Random Access Memory FRAM Demonstration Vehicle • "True" Nonvolatile CMOS Static RAM


    OCR Scan     		PDF 100ns 7S55015 T-46-23-37 100ns/V. SCT T

    toshiba tmp87ph46

    Abstract: RH56
    Text: TOSHIBA TM P87C447/847/H 47/847 L7H47L C M O S 8-BIT M IC R O C O N T R O L L E R TM P87C447U, TM P87C847U, TM P87CH47U, TM P87C847LU, TM P87CH47LU 87C447/847/H 47 are hig h speed and high p e rfo rm a n ce 8 -bit sin g le chip m icro co m p u ters. T h ese M CU co n ta in


    OCR Scan     		PDF P87C447/847/H L7H47L P87C447U, P87C847U, P87CH47U, P87C847LU, P87CH47LU 87C447/847/H P87C447U P37C847U toshiba tmp87ph46 RH56

    m4512

    Abstract: HYM59256AM
    Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18


    OCR Scan     		PDF 4b750flö 256KX M451201A-APR9T HYM59256A HY534256J HY53C256LF 22\sF HYM59256AM HYM59256AP HYM59256A-70 m4512

    a1232

    Abstract: delco 23566 STR 6458 P193D
    Text: -fa Sales Offices, Distributors & Representatives J u n e 1996 Altera Regional Offices NO RTH ERN CALIFORNIA C O R P O R A TE H EAD Q U AR TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408)894-7000 FAX: (408)433-3943 (408) 894-7755


    OCR Scan     		PDF B-201 S-183 P193D a1232 delco 23566 STR 6458

    hyundai tv hy 22 f circuit

    Abstract: c 144 ESS HYM5C9256
    Text: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin


    OCR Scan     		PDF M421202A-APR91 HYM5C9256 HY53C256LF 22jiF HYM5C9256M HYM5C9256P HYM5C9256-70 HYM5C9256-80 HYM5C9256-10 HYM5C9256-12 hyundai tv hy 22 f circuit c 144 ESS

    HS-650

    Abstract: tfmo HS-6564RH Advanced Ceramic X 108RAD
    Text: H A RR IS S E M I C O N D S E CT OR J2J H A R R I S July 1990 T - H U 'Z 3 'iO 4302271 0034133 ? • H A S MGE ]> H S -6564R H Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module Features Pinout TOP VIEW • Radiation Hardened EPI CMOS • • • • • •


    OCR Scan     		PDF GQ34133 HS-6564RH 308mW/MHz 250nation HS-6564RH HS-6504RH HS-650 tfmo Advanced Ceramic X 108RAD

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


    OCR Scan     		PDF CY7C183/184 48-pin 52-pin L7C183/184 L7C183 L7C184

    4678T

    Abstract: 4665T
    Text: T O S H IB A TMP87C446/846/H46 CM OS 8 -BIT M IC R O C O N TR O LLER TMP87C446N, TMP87C846N, TMP87CH46N 87C446/846/H 46 are h ig h speed and hig h p e rfo rm a n ce 8 -bit sin g le chip m icro co m p u ters. T h ese M CU co n ta in CPU co re , RO M , R A M , in p u t/o u tp u t p o rts, an A/D c o n v e rte r, six m u lti-fu n c tio n tim e r/c o u n te rs , a se ria l


    OCR Scan     		PDF TMP87C446/846/H46 TMP87C446N, TMP87C846N, TMP87CH46N 87C446/846/H P87C446N P87C846N P87CH SDIP42-6QQ-1 P87PH 4678T 4665T

    pkg 4623

    Abstract: PKG 4611 PI pkg 4623 PI
    Text: DC/DC Power Modules 30-60 W PKG 4000 I • Effia&xy typ 86% 5 V at full lead * Lcwprdile11.0nmn(0.43in) * 1,500 V deis ialien vdtage (duäs= 1,000 Vcty * MTBF >200yœrsaî +75 'C case • Ruggad rmharica! deágiand éfia&t th&rrá manacpiwti, max + 100 "C e a se


    OCR Scan     		PDF Lcwprdile11 200yoersaî S-164 pkg 4623 PKG 4611 PI pkg 4623 PI

    tms4256

    Abstract: TMS4266
    Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)


    OCR Scan     		PDF U17ES 077GC TM4256EL9, TM4256GU9 -ifc-23-/7 TM4266EL9 30-Pln TM4256EL9) TM4266GU9) tms4256 TMS4266

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CT RONICS INC MSE D Hi 7*T_h43i42 0010110 2 B SMGK KM44C266B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode : Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range; tR A C • • • • • • • • • •


    OCR Scan     		PDF h43i42 KM44C266B 130ns 150ns 44C266B- 180ns 20-LEAD

    samsung pram

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K KM41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


    OCR Scan     		PDF KM41C4002 150ns 100ns 180ns GD10203 T-46-23-15 20-LEAD samsung pram