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    TETRODE TRANSISTOR Search Results

    TETRODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TETRODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12DV8

    Abstract: transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric
    Text: 12DV8 12DV8 ET-T1458 P age 1 DUPLEX-DIODE TETRODE 5-57 FOR DETECTOR AND A F DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS TUBES ^DESCRIPTION AND RATING= The 12DV8 is a miniature duplex-diode, space-charge-grid tetrode intended for use as a combined detector, AVC rectifier, and transistor driver. The tetrode


    OCR Scan     		12DV8 12DV8 ET-T1458 12-volt transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric PDF

    3N141

    Abstract: tetrode
    Text: 3N141 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N141 Online Store 3N141 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


    Original     		3N141 3N141 com/3n141 tetrode PDF

    3N200 MOSFET

    Abstract: 3N200
    Text: 3N200 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N200 Online Store 3N200 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


    Original     		3N200 3N200 com/3n200 3N200 MOSFET PDF

    3n159

    Abstract: dual-gate
    Text: 3N159 N-Channel; Dual-Gate Tetrode MOSFET 6.38 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N159 Online Store 3N159 Diodes N-Channel; Dual-Gate Tetrode MOSFET Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		3N159 3N159 com/3n159 dual-gate PDF

    12ds7

    Abstract: 12ds7 tube Scans-0017276 general electric
    Text: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube


    OCR Scan     		12DS7 ET-T1551 12DS7 12-volt K-556 I-TD84- K-556II-TD84-2 12ds7 tube Scans-0017276 general electric PDF

    "Frequency Tripler"

    Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
    Text: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply


    OCR Scan     		QQC03/14 "Frequency Tripler" 40647 Tripler noval socket philips 9 pin Frequency tripler PDF

    BF998

    Abstract: application BF998 bf998w 3G1 transistor
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W application BF998 3G1 transistor PDF

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		BF998. BF998 BF998R OT143 OT143R BF998, BF998R application BF998 TRANSISTOR mosfet BF998 PDF

    bf998

    Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R PDF

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		BF998. BF998 BF998R OT143 OT143R BF998, application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note PDF

    BF998

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W PDF

    TRANSISTOR mosfet BF998

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W TRANSISTOR mosfet BF998 PDF

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998 PDF

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original     		BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998 PDF

    SOT-343

    Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
    Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BF998 Q62702-F1586 OT-343 Jul-30-1996 SOT-343 G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note PDF

    BF998

    Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
    Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BF998 Q62702-F1177 OT-143R Oct-23-1996 BF998 G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge PDF

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998 PDF

    BF998

    Abstract: bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998
    Text: BF998 3 Silicon N-Channel MOSFET Tetrode 4 • Short-channel transistor with high S/C quality factor 2 • For low-noise, gain-controlled input stages up to 1 GHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF998


    Original     		BF998 VPS05178 OT143 Apr-14-2003 BF998 bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		BF998 Q62702-F1586 OT-343 fl235bG5 PDF

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772


    OCR Scan     		Q62702-F1772 OT-343 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		BF991 S0T143 SQT103 PDF

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998 PDF

    S887T

    Abstract: 1s887
    Text: S 887 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF TV-tuners. Features D Integrated gate protection diodes


    Original     		D-74025 S887T 1s887 PDF