M69KB096AB
Abstract: PSRAM M36P0R9060E0 M58PR512J
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
108MHz,
66MHz
TFBGA10thout
M69KB096AB
PSRAM
M36P0R9060E0
M58PR512J
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"NOR Flash"
Abstract: NOR Flash "NOR Flash" 512MB 512MB NOR FLASH MCP market ST Flash 512Mb nor flash memory TFBGA105
Text: 90nm NOR Flash memory subsystem solutions A wide range of 90nm technology-based devices for the latest generation of mobile phones Offering the most advanced NOR Flash devices available, STMicroelectronics is a leading supplier of memory subsystems for mobile applications. Incorporating the very
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133MHz,
256Mb
512Mb
FLNORWIR0206
"NOR Flash"
NOR Flash
"NOR Flash" 512MB
512MB NOR FLASH
MCP market
ST Flash
512Mb nor flash memory
TFBGA105
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Untitled
Abstract: No abstract text available
Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM
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M36P0R8070E0
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23LIST
Abstract: No abstract text available
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
M36P0R9070E0ZAQF
M36P0R9070E0
23LIST
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P46H
Abstract: TFBGA105
Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58PR256LE
M58PR512LE
M58PR001LE
256-Mbit,
512-Mbit
P46H
TFBGA105
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BGA149
Abstract: TFBGA149 BGA107
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR
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NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
BGA149
BGA107
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M36P0R8070E0
Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM
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M36P0R8070E0
TFBGA107
M36P0R8070E0
M58PR256J
M69KB128AA
strataflash 256 x 2 Mbits
ECR15
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PSRAM
Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
PSRAM
M36P0R9060E0
M58PR512J
M69KB096AM
M58PRxxxJ
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RAS 0510
Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
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256/512-Mbit
x8/x16,
528-byte
256/512-Mbit
x16/x32,
x8/x16)
TFBGA107
TFBGA149
TFBGA137
LFBGA137
RAS 0510
NAND98R3M0
NAND99R
NAND99W3M1
Numonyx MCP
nand98
SDR256
NAND98W
NAND98W3M0
NAND98R
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NAND98W3M0
Abstract: NAND98R3M0 NAND99R NAND98R
Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
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256/512-Mbit
x8/x16,
528-byte
256/512-Mbit
x16/x32,
x8/x16)
TFBGA107
TFBGA149
TFBGA137
TFBGA152
NAND98W3M0
NAND98R3M0
NAND99R
NAND98R
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PSRAM
Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
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M36P0R9070E0
128Mbit
TFBGA107
2112-bit
64-bit
PSRAM
M36P0R9070E0
M58PR512J
M69KB128AA
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TFBGA137
Abstract: BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM
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NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
LFBGA137
TFBGA137
BGA137
BGA bga 10x13
MCP NAND DDR
NAND FLASH BGA
zc 409
NAND512-M
NAND01G-M
NAND256-M
NAND256R3M0
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NANDA9R3N0
Abstract: NANDA9R4N4 nanda8r3
Text: NANDxxRxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features • FBGA MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 2x2-Gbit (x8/x16) large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or
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x8/x16)
2x512-,
256/512-Mbit
x16/x32)
TFBGA107
TFBGA137
TFBGA149
VFBGA160
TFBGA152
NANDA9R3N0
NANDA9R4N4
nanda8r3
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NANDA9R3N
Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or
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2x512-,
256/512-Mbit
x16/x32)
TFBGA107
TFBGA137
LFBGA137
TFBGA149
VFBGA160
VFBGA152
TFBGA152
NANDA9R3N
NANDA9R
TFBGA128
NANDA9R4N4
NANDA9R3N1
nanda8r3
M65KG512AM
d2ed
M65KD001AM
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BGA-Z85
Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
Text: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060N0
TFBGA107
BGA-Z85
ADQ0-ADQ15
M36P0R9060N0
M69KM096AA
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TFBGA107
Abstract: ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G
Text: NAND01G-N 1 Gbit x8/x16 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory
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NAND01G-N
x8/x16)
TFBGA107
ddr flash "ready not busy"
BGA bga 10x13
NAND FLASH BGA
NAND*N
M65KA512AB
NAND01G-N
NAND01GR3N6
NAND01GR4N5
NAND01G
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nor flash 1.8V
Abstract: PSRAM M36P0R9060E0 M58PR512J
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
nor flash 1.8V
PSRAM
M36P0R9060E0
M58PR512J
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BGA bga 10x13
Abstract: NAND FLASH BGA st nand flash application note BGA137 MCP NAND DDR NAND512-M NAND01G-M NAND256-M NAND256R3M0
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR
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NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
BGA bga 10x13
NAND FLASH BGA
st nand flash application note
BGA137
MCP NAND DDR
NAND512-M
NAND01G-M
NAND256-M
NAND256R3M0
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M36P0R9070E0
Abstract: M58PR512J M69KB128AB
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
108MHz,
66MHz
M36P0R9070E0
M58PR512J
M69KB128AB
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TFBGA105
Abstract: CR10 M58PR001LE M58PR512LE
Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58PR512LE
M58PR001LE
512-Mbit
TFBGA105
TFBGA105
CR10
M58PR001LE
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NAND512-M
Abstract: BGA149
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mbit, 512 Mbit (x8/ x16) NAND Flash + 1 die of 256 Mbit (x16) SDR
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NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
LFBGA137
NAND512-M
BGA149
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Untitled
Abstract: No abstract text available
Text: P—TFBGA107—0912—0.80BZ Unit' nn Mar.2005
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P-TFBGA107-0912-0
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