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    M69KB096AB Search Results

    M69KB096AB Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M69KB096AB STMicroelectronics 64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM Original PDF
    M69KB096AB80CW8 STMicroelectronics 64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM Original PDF
    M69KB096AB80DW8 STMicroelectronics 64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM Original PDF

    M69KB096AB Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes


    Original     		PDF M69KB096AB 104MHz 104MHz

    M69KB096AB

    Abstract: synchronous nor flash A0-A21 BCR10 tvs array bare die
    Text: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes


    Original     		PDF M69KB096AB 104MHz 104MHz M69KB096AB synchronous nor flash A0-A21 BCR10 tvs array bare die

    M69KB096AB

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 108MHz, 66MHz TFBGA10thout M69KB096AB PSRAM M36P0R9060E0 M58PR512J