Vishay LCD
Abstract: LCD-160H128B-TFK-VZ LCD-160H128B
Text: LCD-160H128B-TFK-VZ www.vishay.com Vishay 160 x 128 Graphic LCD FEATURES • Type: Graphic • Display format: 160 x 128 dots • Built-in controller: RA6963 • Duty cycle: 1/128 • + 5 V power supply • Optional N.V. • Material categorization: For definitions of compliance
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LCD-160H128B-TFK-VZ
RA6963
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
Vishay LCD
LCD-160H128B-TFK-VZ
LCD-160H128B
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Cutler-Hammer HMCP
Abstract: DS363R DS161R tfk 623 tfk 613 Cutler-Hammer contactor HMCP DS262R UL1203 allen bradley to Cutler-Hammer
Text: EBMC Combination Line Starters and Enclosures Cl. I, Div. 1 & 2, Groups B, C, D Cl. II, Div. 1, Groups E, F, G Cl. II, Div. 2, Groups F, G Cl. III NEMA 3, 3R, 4‡, 7BCD, 9EFG, 12 Explosionproof Dust-Ignitionproof Raintight Wet Locations Watertight 1C Applications:
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Cutler-Hammer HMCP
Abstract: HMCP UL1203 Cutler-Hammer contactor allen bradley to Cutler-Hammer equivalent transistor TT 3034 DS363R Cutler-Hammer transformer TFK D 327 DS161R
Text: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0327-2 Name: 1C-327 100: DATE: JAN 19 2006 Time: 5:18:00 PM Operator: RB EBMC Combination Line Starters and Enclosures COLOR: CMYK Cl. I, Div. 1 & 2, Groups B,C,D Cl. II, Div. 1, Groups E,F,G Cl. II, Div. 2, Groups F,G
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SYS19:
CRMAIN06-0327-2
1C-327
66008com
Cutler-Hammer HMCP
HMCP
UL1203
Cutler-Hammer contactor
allen bradley to Cutler-Hammer
equivalent transistor TT 3034
DS363R
Cutler-Hammer transformer
TFK D 327
DS161R
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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TFK 082
Abstract: J1 TRANSISTOR
Text: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications
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PH1617-12N
TT50M
TFK 082
J1 TRANSISTOR
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TFK 175
Abstract: No abstract text available
Text: A tfK Ô M m an A M P com pany 10W GaAs SPDT Switch DC-3 GHz MASW2020G V 2 .0 0 Features QNO 1 B1 COM RF1 GND 2 • V e r y l l i g l i P o w e r, l W atts I tl H C o m p r e s s i o n <f«-l()V • l.o w In s e r tio n Loss, 0. I d B T y p i c a l @ I C iH z
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MASW2020G
TFK 175
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TFK U B
Abstract: R75n
Text: Thh dD«urn«n1 re t h i pr«p«rty «f A m pha io l C w p a n rlk n and fs d*nv«r«d an R E V IS IO N S +h« e xp ress c an dR ia n m o i fh ¡e r o + +a be tfk c b s a d , rap ra dM csd o r u s s d . In whale o r In pari, ta r manu Tod urs ar M l« by « ny«i» al hcr m an Am phm nl
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HK2571
5/29/D3
RWC-1600-001
TFK U B
R75n
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transistor Bc 540
Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Text: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt
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TFK 450 B2
Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Text: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW61B
BCX716
BCX71J
BCW60
42t sot-23
BCD Schalter
TFK BB
transistor BC 458
BCX 458
TFK AF
tfk s 154 p
am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716
tfk 715
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fr 309
Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen
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BC179
fr 309
BC307
BC177
BC179
BC 179
BC308
BC 307
bc 308
BC309
tfk 731
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rjr ce
Abstract: BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V
Text: BD166 • BD168 • BD170 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: • Verlustleistung 20 W Features: • Power dissipation 20 W
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N125A
150mA
500mA
500mA
rjr ce
BD170
Scans-0010668
BD 166, 168, 170
bd166
JEDECTO126
BD169
BD - 100 V
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NJU7074D
Abstract: NJU7071 NJU7071D NJU7071M NJU7071V NJU7072D NJU7072M NJU7074M NJU7074V nju707
Text: H S Î @ Ï I 4S I AUOÉflPN A^¿o¿nrN im oinP N at¿o¿nrN NUO¿nPN ai¿o¿nPN N Z¿ 0 ¿ n P N Q2¿0¿nPN ZNI.— X 3 S J J 0 I— fri ‘8 dOSS / H ‘8 dNa / H ‘8 día SlftSM-O« Afr¿0¿ílPN ALZ.0Z.Í1PN •teau¿o¿nPN ( d A * v d l = 9 1 I) 'g m u y y q : y #
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NJU7071/7
NJU7071/72/74It%
NJU7071
NJU7071D
NJU7071M
NJU7071V
NJU7072D
NJU7072M
NJU7072D
NJU7074D
NJU7071
NJU7071V
NJU7072M
NJU7074M
NJU7074V
nju707
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c 337 25
Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Text: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt
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BSW39
Abstract: lamb
Text: BSW39 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Pianar Switching Transistor Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and sw itches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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BSW39
BSW39
lamb
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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AF239
Abstract: germanium-pnp-mesa-hf-transistor AF 239
Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz
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TFK BSV 60
Abstract: c20m TFK 175 tfk a BSV16
Text: BSV 15 • BSV 16 Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W
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O-20V
211N414
TFK BSV 60
c20m
TFK 175
tfk a
BSV16
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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TSW-10-11B-T15
Abstract: No abstract text available
Text: 3RD ANGLE PROJECTION] SHOWMAN m m 8 C -2 0 8K7y-*Aii3. J; 1 0 , 5 0 0 p c s . P U liT -t* vr 1 , 5 0 0 p c s . / ! “ />) t t i i T S W - l 0T(C $6o tt « « # U * TSW -l0-11 H # $ # ti: ftftttttft ( 1) (2) ( 3) A s i - T C S -1 0 , T C V -1 0lit-7vy
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TSW-10-11_
TSW-10-11B-T15
500pcs.
TSW-10Tfc#
TSW-10-11
TCS-10,
TBN-10,
TPC-10ttCFD-0
TSW-10-11B-Tl5
TSW-10-11B-T15
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