is61m256
Abstract: is61m256-15n ISSI is61c256AH - 15J IS61C256AH IS61C256AH-15JI
Text: IS61C256AH IS61M256 ISSI 32K x 8 HIGH-SPEED CMOS STATIC RAM MARCH 1998 FEATURES DESCRIPTION • High-speed access time: 8,10,12,15, 20, 25 ns The IS61C256AH and IS61M256 are very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabri cated using
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IS61C256AH
IS61M256
PK13197T28
TGG44G4
is61m256-15n
ISSI is61c256AH - 15J
IS61C256AH-15JI
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24197
Abstract: FL003 T4423 BLV38
Text: ISSF fê * » V /B L V 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION JULY 1997 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times
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x8/x16
32-bit
16-KB
96-KB
128-KB
PK13197T48
24197
FL003
T4423
BLV38
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Untitled
Abstract: No abstract text available
Text: ISSI -r iiS IS62C64 •M t» 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • CMOS low power operation The IS S IIS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using ISSPs high-performance CMOS technology. — 400 mW max. operating
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IS62C64
IIS62C64
192-word
IS62C64-45W
IS62C64-45U
600-mil
450-mil
IS62C64-70W
IS62C64-70U
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Untitled
Abstract: No abstract text available
Text: ISSI IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 nA • Low voltage operation — 3.0V Vcc = 2.7V to 5.5V • Hardware write protection
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IS24C02-3
048-BIT
T0Q4404
IS24C02-3P
IS24C02-3G
600-mil
IS24C02-3PI
IS24C02-3GI
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