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    Vishay Sprague THBG01

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    T3D 75 diode

    Abstract: T3D DIODE
    Text: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)


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    PDF G003bn THD9751 THD9752 THYA01 THYA02 THYB01 THYB02 THYI01 THYI02 THBQ01 T3D 75 diode T3D DIODE

    diode 1N4001 specifications

    Abstract: 1N4001 general diode purpose Diode Array 1N4448 THD4001 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q
    Text: ALLECRO MICROSYSTEMS INC bbE » • 0S0N33Í 000bS2b £10 BA LG R ELECTRICAL CHARACTERISTICS at TA = + 25°C Device Type Type Max. Description mA v (BR) Min. (V) vF Coo> 'r *rr Max. Max. @ IF Max. Max. (V) (mA) (nA) (ns) (PF) Geometry 1N3600 THD3600 General Purpose


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    PDF 0S0H33fl 1N3600 THD3600 1N4001 THD4001 1N4002 THD4002 1N4003 THD4003 1N4004 diode 1N4001 specifications 1N4001 general diode purpose Diode Array 1N4448 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q

    30 kv diode

    Abstract: P diode BQB 80 THBG01 THD9751 THD9752 D 10 N diode SCHOTT diode
    Text: ALLEGRO MICROSYSTEM S 8514019 INC SPRAGUE. =13 D • 0304330 SEM ICO N D S/ IC S □D 0 3 h n 93D 2 ■ ALGR 03619 DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C ^BR Device Type II* *D Min. <fclR m-A Max. (nA) i'V R (V) Min.


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    PDF THD9751 THD9752 THYA01 THYA02 THYB01 THYB02 THYI01 30 kv diode P diode BQB 80 THBG01 D 10 N diode SCHOTT diode