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Abstract: No abstract text available
Text: THD45H10 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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THD45H10
Freq40M
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603 transistor npn
Abstract: BT 316 transistor
Text: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —
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DSDH33Ã
Q00bS17
D40D11
THC40D11
D41D11
THC41D11
0S0433fl
05D433fl
603 transistor npn
BT 316 transistor
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MPSU95
Abstract: D40D11 D41D11 D44H10 D45H10 MJE15028 THC40D11 THC41D11 THD44H10 THD45H10
Text: ALLEGRO MICROSYSTEMS INC bbE i • DSDH33Ô Q00bS17 23Ö * A L G R BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = + 25°C A 'cBO 'c D evice A lle g ro T yp e T yp e Max. Polarity mA V T (BR)CBO (V) V ’ (BR)CEO (V) 'cEO V ¥ (BR)EBO Max. @ V CB
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0S0M33Ã
D40D11
THC40D11
D41D11
THC41D11
D44H10
THD44H10
D45H10
THD45H10
MJE15028
MPSU95
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