THERE 2N4264 Search Results

THERE 2N4264 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MMBR2857LT1 Abstract: bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi Text: 145 Adams Avenue Hauppauge, NY 11788 Phone 631 435-1110 Fax (631) 435-1824 www.centralsemi.com/eol EOL –LIFE SUPPORT List as of: March 30, 2001 Central Semiconductor Corp. will continue to manufacture the discrete semiconductors included on this list as long as there is an industry demand. For an update of this list please contact your sales	Original	1N961B 1N962B 5KE100CA TIP32A TIP32B TIP32C MMBR2857LT1 bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor	PDF
MMBF4856 Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to	Original	Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093	PDF
2n3819 replacement Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device	Original	MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265	PDF
MIL-STD-750 method 1037 Abstract: BC237 BF245 MPF4856 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other	Original	OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856	PDF
BC237 Abstract: Fet BF245 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V	Original	VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245	PDF
MPS751 equivalent Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS	Original	MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor	PDF
mpsa63 replace Abstract: BC237 MPSA63 equivalent J111 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit	Original	MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111	PDF
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
motorola JFET 2N3819 Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current	Original	MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA	PDF

BC237 Abstract: MMBV2107 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)	Original	BAV74LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MMBV2107 BCY72	PDF
BC237 Abstract: 2n2222 sot-23 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts	Original	MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BC237 2n2222 sot-23	PDF
BC237 Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ	Original	VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819	PDF
MPSA44 equivalent Abstract: BC237 BF244A MOTOROLA Transistor BC107 PLASTIC PACKAGE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MPSA44 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO	Original	MPSA44 226AA) Sym218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPSA44 equivalent BC237 BF244A MOTOROLA Transistor BC107 PLASTIC PACKAGE	PDF
BC237 Abstract: BC394 motorola 2N956 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3454VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–	Original	MGSF3454VT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC394 motorola 2N956 MOTOROLA	PDF
TRANSISTOR MARKING Y1 SOT23 5L Abstract: BF245 application note BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package	Original	MMBV609LT1 CAPACITAN218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 TRANSISTOR MARKING Y1 SOT23 5L BF245 application note BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 K 2056 transistor	PDF
BC108 plastic Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 78 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–	Original	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 plastic BC237	PDF
BC237 Abstract: A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)	Original	BAS16LT1 236AB) M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode	PDF
MPF910 equivalent Abstract: .model for MPF910 BC237 TRANSISTOR mpf910 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C	Original	MPF910 MPF910 MFE910 226AE) Max218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MPF910 equivalent .model for MPF910 BC237 TRANSISTOR mpf910	PDF
diode hp2800 Abstract: No abstract text available Text: RL2048S J ^ E B x B R E T IC O Solid State Line Scanner 2048 Elements N General Description Common [ Start 3 [ Start 4 C 0421 041 C The RL2048S is a monolithic self-scanning linear photodiode array optimized for spectroscopy applications. The device consists of a row of silicon photodiodes, each with an	OCR Scan	RL2048S RL2048S 32-pin DDD4A40 diode hp2800	PDF

THERE 2N4264 Search Results

THERE 2N4264 Datasheets Context Search

MMBR2857LT1

BC237

BC237

BC237

BC237

MMBF4856

2n3819 replacement

MIL-STD-750 method 1037

BC237

MPS751 equivalent

mpsa63 replace

SOT23 JEDEC standard orientation pad size

BC237

motorola JFET 2N3819

BC237

BC237

BC237

MPSA44 equivalent

BC237

TRANSISTOR MARKING Y1 SOT23 5L

BC108 plastic

BC237

MPF910 equivalent

diode hp2800