CL100 transistor
Abstract: transistor E 13009 1024x4 bit ram transistor cl100 if6 hall 13009 TRANSISTOR equivalent gm f131 13005 TRANSISTOR HALL EFFECT TRANSISTOR 17S IAIO 3Y
Text: MIL-M-38510/245A 28 January 1987 _ s u p e r s iin r MIL-H-38510/2455 USAF 5 April 1983 " m ilit a r y spec ific a t io n MICROCIRCUITS, DIGITAL. CMOS, 4096 BIT, STATIC RANDOM ACCESS MEHORY SRAM), BULK SILICON AND SILICON 0# SAPPHIRE This specification 1s approved f ° r use
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mil-m-38510/245A
mil-m-38510,
NIL-M-3S510/24SA
CL100 transistor
transistor E 13009
1024x4 bit ram
transistor cl100
if6 hall
13009 TRANSISTOR equivalent
gm f131
13005 TRANSISTOR
HALL EFFECT TRANSISTOR 17S
IAIO 3Y
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AAG3AA
Abstract: M6390 DTMF keypad with encoder GoldStar multi tone buzzers transistor a7n 10KO GIV36390 GM6390 IVI6390
Text: GOLDSTAR TECHNOLOGY INC/ B1E D m 4026757 DDOBOflS b • _ - r - iz - c n - o i GM6390 TONE/PULSE SWITCHABLE DIALER WITH REDIAL Description Pin Connection The GM6390 is a monolithic, integrated circuit manufactured using G S silicon Gate CMOS process. The device is TONE/
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GM6390
GM6390
AAG3AA
M6390
DTMF keypad with encoder
GoldStar
multi tone buzzers
transistor a7n
10KO
GIV36390
IVI6390
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TI5C
Abstract: No abstract text available
Text: O K I Semiconductor MSM64164C_ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller G EN ERA L DESCRIPTIO N The M S M 6 4 I6 4 C is a lo w pow er 4-bit m icrocontroller vising O K I original C P U core nX-4/20. The M SM 64164C has the m in im um instruction execution tim e of 7.5 |js @400 k H z and has
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MSM64164C
nX-4/20.
64164C
4064-byte
256-nibble
768kHz,
TI5C
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YW 431
Abstract: EIA rs 481 marking 73H
Text: s TAIWAN SEMICONDUCTOR RS2A - RS2M 2.0 AMPS. Surface Mount Fast Recovery Rectifiers tò RoHS SMB/D-Q-21-4AA C O M P L IA N C E Features •c<r ■> ■> <r ■> <- n & f . 'i •X/IX-'Kj _ F o r s u r fa c e m o u n te d a p p lic a tio n G la s s p a s s iv a te d ju n c tio n c h i p
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SMB/DQ-214AA
YW 431
EIA rs 481
marking 73H
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PA1556A
Abstract: IC-8612 PA1556AH U10120 1556A
Text: C om po un d Field Effect P ow er Transistor / ¿ N P A 1 5 5 6 A MOS F E T T V -f I t i /¿PA1556A l i m < i & < x ^ MOS FET y f > r m t t f i i t i r a n X t> t& m m 4.0 a - a r ? f -^ ^ - , ? X ^ -y f - 0 ^ 7 > '7°.|g|j][H ]ii§ C jlS T ;' i '„ # &
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uPA1556A
PA1556AH
IEI-620)
PA1556A
IC-8612
PA1556AH
U10120
1556A
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