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Microchip Technology Inc DSPIC33CK128MP503T-I-M5 IC MCU 16BIT 128KB FLASH 36UQFN
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DigiKey	DSPIC33CK128MP503T-I-M5	Reel	6,600		3,300	1 - 10 - 100 - 1000 - 10000 $3.20002	Buy Now
	DSPIC33CK128MP503T-I-M5	Digi-Reel	6,600		1	1 $3.85 10 $3.85 100 $3.85 1000 $3.85 10000 $3.85	Buy Now
Microchip Technology Inc DSPIC33EV32GM103T-I-M5 IC MCU 16BIT 32KB FLASH 36UQFN
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DigiKey	DSPIC33EV32GM103T-I-M5	Cut Tape	3,326		1	1 $4.02 10 $4.02 100 $4.02 1000 $4.02 10000 $4.02	Buy Now
	DSPIC33EV32GM103T-I-M5	Digi-Reel	3,326		1	1 $4.02 10 $4.02 100 $4.02 1000 $4.02 10000 $4.02	Buy Now
Microchip Technology Inc DSPIC33EV64GM103T-I-M5 IC MCU 16BIT 64KB FLASH 36UQFN
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DigiKey	DSPIC33EV64GM103T-I-M5	Digi-Reel	3,300		1	1 $4.28 10 $4.28 100 $4.28 1000 $4.28 10000 $4.28	Buy Now
	DSPIC33EV64GM103T-I-M5	Cut Tape	3,300		1	1 $4.28 10 $4.28 100 $4.28 1000 $4.28 10000 $4.28	Buy Now
	DSPIC33EV64GM103T-I-M5	Reel	3,300		3,300	1 - 10 - 100 - 1000 - 10000 $3.55001	Buy Now
Microchip Technology Inc DSPIC33CH64MP203T-I-M5 IC MCU 16BIT 88KB FLASH 36UQFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DSPIC33CH64MP203T-I-M5	Reel	3,300		3,300	1 - 10 - 100 - 1000 - 10000 $3.50003	Buy Now
Microchip Technology Inc DSPIC33EV128GM103T-I-M5 IC MCU 16BIT 128KB FLASH 36UQFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DSPIC33EV128GM103T-I-M5	Cut Tape	3,300		1	1 $4.54 10 $4.54 100 $4.54 1000 $4.54 10000 $4.54	Buy Now
	DSPIC33EV128GM103T-I-M5	Reel	3,300		3,300	1 - 10 - 100 - 1000 - 10000 $3.76001	Buy Now
	DSPIC33EV128GM103T-I-M5	Digi-Reel	3,300		1	1 $4.54 10 $4.54 100 $4.54 1000 $4.54 10000 $4.54	Buy Now

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TIM5 Datasheets (103)

Part	Manufacturer	Description	Datasheet Type	PDF
TIM5053-16	Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM5053-16L	Toshiba	Low Distortion Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM5053-16SL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM5053-30L	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM5053-35SL	Toshiba	Microwave Power GAAS Fet	Scan	PDF
TIM5053-35SL	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
TIM5053-4	Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM5053-4SL	Toshiba	C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 36.5; G1dB (dB): 9.5; Ids (A) Typ.: 1.1; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 4.5; Package Type: 2-16G1B	Original	PDF
TIM5053-8	Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM5053-8L	Toshiba	Transistor	Scan	PDF
TIM5053-8SL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM5359-16	Toshiba	TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power	Original	PDF
TIM5359-16	Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM5359-16EL	Toshiba	TIM5359 - TRANSISTOR RF POWER, FET, FET RF Power	Original	PDF

TIM5359-16L	Toshiba	Transistor	Scan	PDF
TIM5359-16SL	Toshiba	TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power	Original	PDF
TIM5359-16UL	Toshiba	C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 42.5; G1dB (dB): 10; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B	Original	PDF
TIM5359-30L	Toshiba	Low Distortion Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM5359-35SL	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
TIM5359-35SL	Toshiba	Microwave Power GaAs FET	Scan	PDF

TIM5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5359-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=8.5dB at 5.3GHz to 5.9GHz	Original	TIM5359-16SL TIM5359-16UL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS	Original	TIM5359-4UL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS	Original	TIM5964-30UL 2-16G1B)	PDF
PIN275 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5964-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz	Original	TIM5964-4SL TIM5964-4UL 15GHz PIN275	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5964-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C	Original	TIM5964-12UL 15GHz	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz	Original	TIM5053-8SL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5964-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS	Original	TIM5964-6UL Int38 15GHz	PDF
TIM5964-35SL Abstract: No abstract text available Text: TOSHIBA TIM5964-35SL MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm • High power - P1dB = 45.5 dBm at 5.9 to 6.4 GHz • High efficiency - ηadd = 37% at 5.9 to 6.4 GHz • High gain - G1dB = 8.0 dB at 5.9 to 6.4 GHz	Original	TIM5964-35SL 2-16G1B) MW50830196 TIM5964-35SL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS	Original	TIM5359-16UL	PDF
tim5964-60sl Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5964-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level n HIGH POWER P1dB=48.0dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.4GHz	Original	TIM5964-60SL IDS13 tim5964-60sl	PDF
TIM5964-12UL Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM5964-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C	Original	TIM5964-12UL Dist31 15GHz TIM5964-12UL	PDF
TIM5964-60SL-251 Abstract: No abstract text available Text: PRELIMINARY March 2001 TIM5964-60SL-251 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT 47.0 48.0  dBm 7.5 8.5  dB IDS  13.2 15.0 Power Added Efficiency ηadd  41  % 3rd Order Intermodulation	Original	TIM5964-60SL-251 75GHz 2-16G1B) TIM5964-60SL-251	PDF
POUT315 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED	OCR Scan	-45dBc TIM5964-16SL-081 2-16G1B) POUT315	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz	OCR Scan	TIM5964-8SL TIM5964-8SL MW50750196	PDF

F585 Abstract: No abstract text available Text: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V	OCR Scan	TIM5964-16L-151 TIM5964- 16L-151 2-16G1B) F585	PDF
5964-16L Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.9 G H z to 6.4 G H z	OCR Scan	TIM5964-16L MW50780196 5964-16L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM5964-8A 2-11D1B) at260	PDF
Untitled Abstract: No abstract text available Text: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A	OCR Scan	TIM5964-4SL-031	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 25 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 36 d B m a t 5.9 G H z to 6.4 G H z	OCR Scan	TIM5964-4L MW50710196 TIM5964-4L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM5359-16 TIM5359-16	PDF
si111 Abstract: No abstract text available Text: TIM5359-4L FEATURES : • L O W IN T E R M O D U L A T IO N D IS TO R TIO N I M 3 = - 4 5 dBc at Po = 25 dBm, Single Carrier Level • HIG H GAIN G idB ~ 9- odB at 5. 3 GHz to 5. 9 GHz • BROAD BAND INTERNALLY M A T C H E D « H IG H POWER • HERMETICALLY SEALED PACKAGE	OCR Scan	TIM5359-4L si111	PDF
TIM5359-35SL Abstract: No abstract text available Text: TIM5359-35SL FE A TU R E S : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION rjadd = 38% at 5.3 to 5.9 GHz IM3 = -45dB c at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER G ldB = 8.5 dB at 5.3 to 5 .9 GHz PldB = 45.5dBm at 5.3 to 5.9 GHz ■ BROAD BAND INTERNALLY MATCHED	OCR Scan	TIM5359-35SL -45dBc TIM5359-35SL	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P-idB = 42.5 dBm at 5.9 GHz to 6.4 GHz	OCR Scan	TIM5964-16SL MW50800196	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P-\|dB = 36 dBm at 5.9 GHz to 6.4 GHz	OCR Scan	TIM5964-4L MW50710196 TIM5964-4L	PDF

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TIM5 Price and Stock

Microchip Technology Inc DSPIC33CK128MP503T-I-M5

Microchip Technology Inc DSPIC33EV32GM103T-I-M5

Microchip Technology Inc DSPIC33EV64GM103T-I-M5

Microchip Technology Inc DSPIC33CH64MP203T-I-M5

Microchip Technology Inc DSPIC33EV128GM103T-I-M5

TIM5 Datasheets (103)

TIM5 Datasheets Context Search

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PIN275

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TIM5964-35SL

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tim5964-60sl

TIM5964-12UL

TIM5964-60SL-251

POUT315

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F585

5964-16L

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si111

TIM5359-35SL

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