Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz
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TIM5053-8SL
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TIM5053-4SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz
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TIM5053-4SL
TIM5053-4SL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-16SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 5.0GHz to 5.3GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C
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TIM5053-16SL
42uipment
TIM5053-16SL
2-16G1B)
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-4SL P RELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 5.0GHz to 5.3GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C
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TIM5053-4SL
TIM5053-4SL
2-11D1B)
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TIM5053-4SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz
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TIM5053-4SL
TIM5053-4SL
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TIM5053-30L
Abstract: No abstract text available
Text: TOSHIBA TIM5053-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.0 GHz to 5.3 GHz
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TIM5053-30L
2-16G1B)
MW50640196
TIM5053-30L
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TIM5053-8SL
Abstract: 53GHZ/512K/533FSB
Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz
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TIM5053-8SL
TIM5053-8SL
53GHZ/512K/533FSB
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TIM5053-35SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz
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TIM5053-35SL
35dBm
TIM5053-35SL
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TIM5053-8SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level n HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz
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TIM5053-8SL
TIM5053-8SL
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TIM5053-16SL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz
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TIM5053-16SL
TIM5053-16SL
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TIM5053-8
Abstract: No abstract text available
Text: TOSHIBA TIM5053-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package
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TIM5053-8
2-11D1B)
MW50610196
TIM5053-8
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5053-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 5.0GHz to 5.3GHz HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz
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TIM5053-16SL
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEMICONDUCTOR TIM5053-35SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY IMS » -45dBo at Po » 35.tídBm rjadd a 38« a t S. 0 to 5. 3GHz ■ HIGH POWER ■ HIGH GAIN GldB s 9. OdB at 5.0 to 5.3GHz
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TIM5053-35SL
-45dBo
5053-35SI
TIU5053-35SI
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-4 TECHNICAL DATA FEATURES: • HIGH POWER Pi dB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE
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TIM5053-4
2-11D1B)
TIM5053-4--------------------POWER
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Untitled
Abstract: No abstract text available
Text: TIM5053-8L FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 28 dBm, Single Carrier Level ■ HIGH POWER Pi dB = 39 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN GldB = 9 dB at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE
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TIM5053-8L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16 Internally Matched Power GaAs FETs C-Band Features • H i g h power - P idB = 42.5 dBm at 5.0 GHz to 5.3 GHz • High gain - G-|dB = 8 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package
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TIM5053-16
2-16G1B)
MW50620196
00224m
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P ide = 42.5 dBm at 5.0 GHz to 5.3 GHz
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TIM5053-16L
MW50630196
M5053-16L
372S0
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TIM5053-35SL
Abstract: TIM5053-3SSL
Text: TOSHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEM ICO NDUCTO R TIM5053- 35SL TECHNICAL DATA FEATURES : • LOW INTERM O DULATIO N DISTO RTIO N ■ HIGH EFFIC IEN C Y IMS » -4 5 d B o at Po » 35.ddB m ■qadd a 38« a t S. 0 to 5. 3GHz ■ HIGH G AIN ■ H IG H P O W E R
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TIM5053-35SL
-46dBo
15SHZ
TIM5053-35SL
TIM5053-3SSL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER G aAs FET M ICROWAVE S E M IC O N D U C T O R TIM5053-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION TJadd = 38% at 5. 0 to 5. 3GHz IM3 = -4 5 d B c at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER
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TIM5053-35SL
053-35SL
2-16G1B)
TIM5053-35SL-------------POWER
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-16L TECHNICAL DATA FEATURES: HIGH GAIN G1dB = 8.0 dB at 5.0 GHz to 5.3 GHz BROAD BAND INTERNALLY MATCHED • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 31.5 dBm Single Carrier Level
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TIM5053-16L
2-16G1B)
---------TIM5053-16L----------------POWER
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-8 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 39 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9 0 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE
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TIM5053-8
2-11D1B)
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OC44
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G idB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally m atched • H erm etically sealed package
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TIM5053-8
2-11D1B)
at260
OC44
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TIM5053-4
Abstract: No abstract text available
Text: TIM5053-4 FEATURES: • HIGH POWER PldB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G-|dB = 9.5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS O u tp u t Power
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TIM5053-4
2-11D1B)
2601C.
TCH7250
TIM5053-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.0 G H z to 5 .3 G H z
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TIM5053-16L
2-16G1B)
MW50630196
TIM5053-161Power
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