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    TIP 141 TRANSISTOR Search Results

    TIP 141 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP 141 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 40F/141 F/142F 145F/146F/147F TIP141T TIP142T TIP140T 41HP1

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 40F/141 F/142F 145F/146F/147F TIP141T TIP142T TIP140T

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A TO -3P MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE y . ' . W C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP142F TIP141F TIP140F

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45/146/147 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P \A \ wh C om plem ent to TIP 140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP147 TIP146 TIP145 TIP145/146/147

    142 TRANSISTOR

    Abstract: TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F
    Text: NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ V ce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P • C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP140/141 TIP145/146/147 TIP140 TIP141 TIP142 142 TRANSISTOR TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F

    MPSU52

    Abstract: transistor tip 46 MPS-U52 TIP 41 transistor tip142 darlington transistor tip 142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN T IP I 40 Darlington Com plem entary Silicon Power Transistors TIP 141* . . . designed for general-purpose amplifier and low frequency switching applications. T IP I 4 2 * • • • High DC Current Gain — Min hpE = 1000 @ Iq = 5 A, V ^ e = 4 V


    OCR Scan     		PDF TIP140, TIP145 TIP141, TIP146 TIP142 TIP147 MPS-U52 MPSU52 transistor tip 46 MPS-U52 TIP 41 transistor tip142 darlington transistor tip 142

    OO3A

    Abstract: BL53 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 darlington TIP142 power amplifier AFE1000
    Text: TIP145 TIP146 TIP147 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g applications. SO T-93 plastic envelope. N-P-N com plem ents are T IP 1 4 0, TIP 141


    OCR Scan     		PDF TIP145 TIP146 TIP147 OT-93 TIP140, TIP141 TIP142. TIP146 7Z77492 OO3A BL53 TIP140 TIP142 TIP147 darlington TIP142 power amplifier AFE1000

    Untitled

    Abstract: No abstract text available
    Text: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION


    OCR Scan     		PDF TIP140/141/142 TIP141, TIP142, TIP145 TIP147 TIP140, TIP141 TIP142 O-218 TIP145,

    tip 142

    Abstract: TIP142 TIP 147 TIP142 TIP147 P140 P145 TIP140 TIP141 TIP145 TIP146
    Text: S A N Y O SEMICONDUCTOR NPN TIP140 TIP141 TIP142 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP145 TIP146 TIP147 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @ 5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


    OCR Scan     		PDF TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 tip140, tip145 tip141, tip146 tip 142 TIP 147 TIP142 TIP147 P140 P145

    bdx340

    Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60


    OCR Scan     		PDF 2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p le m e n t to T IP 1 4 5 /1 4 6 /1 4 7


    OCR Scan     		PDF TIP140/141/142 TIP142

    tip 147 TRANSISTOR

    Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 TIP140/141/142 TIP14 TIP147 I45/146/147 tip 147 TRANSISTOR tip 145 transistor transistor tip 142 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P NPv • C o m p le m e n t to TI P 1 4 5 /1 4 6 /1 4 7


    OCR Scan     		PDF TIP140/141/142

    tip 147 transistor

    Abstract: transistor tip 142 npn tip tip 141 transistor tip 35 c transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN h FE = 1000 @ V ce * -4V , IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 --20mA, TIP140/141A142 tip 147 transistor transistor tip 142 npn tip tip 141 transistor tip 35 c transistor

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


    OCR Scan     		PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    B0638

    Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
    Text: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g


    OCR Scan     		PDF BD634, BD636, BD638 BD633, BD635, BD637 BD634 BD636 B0638 BD638 TIP 122 100 V B0738 BD637 tip 42 darlington complementary power amplifier tip 142 73 5302

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


    OCR Scan     		PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    Bow94c

    Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF IRFZ20FI BUZ10 STLT29* BUZ11A SGSP382 SGSP482 BUZ11 BUZ11FI IRFZ42 SGSP492 Bow94c MTP3055A IRFZ22 mosfet b0334 SGSP222 STVHD90 SGS137 SGSD93G

    Bow94c

    Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a

    bow94c

    Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF IRF530FI SGSP361 SGSP461 BUZ21 BUZ25 IRF142 IRF542 IRF542FI IRF152 IRFP152 bow94c BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SMD SJ 87 b0334 BUZ10

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


    OCR Scan     		PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    TIP140

    Abstract: TIP142 TIP146 TIP142 TIP147 TIP141 TIP145 TIP147 tip 147
    Text: Datasheet H C o n tM l TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP tm SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF TIP140 TIP141 TIP142 TIP145 TIP146 O-218 TIP140, TIP142 TIP147 TIP147 tip 147

    IPI-41

    Abstract: TIP147 morocco diode sg 42
    Text: tipi 41 142 TIPI 46/1 47 S GS-THOMSON Kl g«LiM(S iO(gS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION • INTEGRATED ANTIPARALLEL


    OCR Scan     		PDF TIP141, TIP142 TIP147 TIP141and O-218 TIP146 IPI-41 TIP147 morocco diode sg 42

    TIP 41 transistor

    Abstract: B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT
    Text: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED M E S A SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C • 125 W at 25°C Case Temperature •


    OCR Scan     		PDF TIP35, TIP35A, TIP35B, TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A TIP 41 transistor B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT