10MQ060N
Abstract: No abstract text available
Text: Bulletin PD-20519 rev. E 08/00 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Description/Features Major Ratings and Characteristics Characteristics IF 10MQ060N Units DC 2.1 A VRRM 60 V IFSM @ tp = 5 µs sine 40 A 0.63 V - 55 to 150 °C VF @1.5Apk, TJ=125°C TJ range
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PD-20519
10MQ060N
10MQ060N
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10MQ060N
Abstract: marking code IR1H surface mount diode 10MQ060 AN-994
Text: Bulletin PD-20519 rev. F 05/01 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Major Ratings and Characteristics Characteristics IF Description/Features 10MQ060N Units DC 2.1 A VRRM 60 V IFSM @ tp = 5 µs sine 40 A 0.63 V - 55 to 150 °C VF @1.5Apk, TJ=125°C TJ range
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PD-20519
10MQ060N
10MQ060N
10MQ060
marking code IR1H surface mount diode
AN-994
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ir1h
Abstract: 10MQ060TR marking code IR1H surface mount diode 10MQ060N 10MQ060 AN-994 PD-20519
Text: Bulletin PD-20519 rev. G 02/02 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Major Ratings and Characteristics Characteristics IF Description/Features 10MQ060N Units DC 2.1 A VRRM 60 V IFSM @ tp = 5 µs sine 40 A 0.63 V - 55 to 150 °C VF @1.5Apk, TJ=125°C TJ range
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PD-20519
10MQ060N
10MQ060N
10MQ060
ir1h
10MQ060TR
marking code IR1H surface mount diode
AN-994
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2F P marking
Abstract: 10MQ060N ir1h 10MQ060 AN-994
Text: PD-20519 rev. D 11/99 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Description/Features Major Ratings and Characteristics Characteristics IF 10MQ060N Units DC 2.1 A VRRM 60 V I FSM @ tp = 5 µs sine 40 A 0.63 V - 40 to 150 °C VF @ 1.5Apk, TJ=125°C TJ range The 10MQ060N surface mount Schottky rectifier has been
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PD-20519
10MQ060N
10MQ060N
2F P marking
ir1h
10MQ060
AN-994
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Untitled
Abstract: No abstract text available
Text: VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation
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VS-42CTQ030SHM3,
VS-42CTQ030-1HM3
O-262
VS-42CTQ030SHM3
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation
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PDF
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VS-42CTQ030SHM3,
VS-42CTQ030-1HM3
O-262
VS-42CTQ030SHM3
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-20CTQ150SHM3, VS-20CTQ150-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB D2PAK FEATURES TO-262AA • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation
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VS-20CTQ150SHM3,
VS-20CTQ150-1HM3
O-263AB
O-262AA
VS-20CTQ150SHM3
J-STD-020,
AEC-Q101
JESD-201
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: VS-30CTQ.SHM3, VS-30CTQ.-1HM3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation
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VS-30CTQ.
O-262
J-STD-020,
AEC-Q101
JESD-201
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A VS-MBRB4045CTHM3 VS-MBR4045CT-1HM3 FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-MBRB4045CTHM3,
VS-MBR4045CT-1HM3
VS-MBRB4045CTHM3
J-STD-020,
AEC-Q101
O-262
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A VS-MBRB4045CTHM3 VS-MBR4045CT-1HM3 FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy
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VS-MBRB4045CTHM3,
VS-MBR4045CT-1HM3
VS-MBRB4045CTHM3
J-STD-020,
AEC-Q101
O-262
2002/95/EC.
2002/95/EC
2011/65/EU.
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CP08G
Abstract: cp08e CQ08G CL16C CL16D CL16E CL16F CL16G CL16J CM16C
Text: - a n Vtm Vgd VGT V Tj CC) ITM (A) tt dv/dt (min) (min) *typ *typ Tq IH IGT (V) (mA) Te (°C) (V) Tj (°C) vo (V) (V ß s) Tj CC) Vd (V) ( ß s) Tj <°C> Vr (V) ITM (A) *typ (mA) Rth (tt2) m m æ CC/W) 1. 1. 1. 1. 1. 50 50 50 50 50 25# 251 25# 25# 25# 320
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CL16C
CL16D
CL16E
CL16F
H-101
CP08G
cp08e
CQ08G
CL16C
CL16D
CL16E
CL16F
CL16G
CL16J
CM16C
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT IXGH30N60B IXGT30N60B vCES ^C25 vCE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data ÒB Symbol Test Conditions VCES Tj =25°Cto150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 Mft 600 V vGES vGEM Continuous ±20 V Transient ±30
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IXGH30N60B
IXGT30N60B
Cto150
O-247
O-268
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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24N50B
Abstract: IXGH24N50B IXGH24N50BU1 IXGH24N60B IXGH24N60BU1
Text: DIXYS V,CES HiPerFAST IGBT IXGH 24N50B IXGH 24N60B Symbol Maximum Ratine Test Conditions 24N50 Tj =25°C to150°C 500 600 V V CGR Tj = 25°C to 150°C; RG6 = 1 M il 500 600 V v Continuous ±20 V VGEM Transient 30 V C25 Tc = 25°C 48 A Tc = 90°C 24 A
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24N50B
24N60B
24N50
24N60
O-247AD
to150
JEDECTO-247
24N60B
IXGH24N50B
IXGH24N50BU1
IXGH24N60B
IXGH24N60BU1
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Untitled
Abstract: No abstract text available
Text: 95 max. 314425 314425 □ Anford erunq sstufe class 15 x 5.08 = 7 6 ,2 contact layout Bestückungsplan / I -ijj- I -jjj- I -tjì- I -tjì- I -tji- » -ijj- I - -jjj- I -fo ' I -tji I -tji- » -cjfr » -i { j - I bestückt - - fo I I solder terminal 1,0 x 1,0 mm
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50N60B
Abstract: No abstract text available
Text: OIXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES ^C25 vCE sat = 6 0 0 V = 7 5 A = 2 .5 V G_ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 M£1 600 V vGES vGEM u u Maximum Ratings Continuous ±20 V Transient
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50N60B
OT-227B,
50N60B
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VMO 440
Abstract: ixys VMO 440
Text: HiPerFET MOSFET Module VMO 550-01 F VD S S D25 R DS on N-Channel Enhancement Mode ? G = 100 V = 590 A = 2.1 m ii D I Preliminary Data KS A s Symbol Test Conditions Voss Tj = 25°C to 150°C 100 V Tj = 25°C to 150°C; R as = 10 kil 100 V VGs vG SM 'dbo
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x25-m
Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse
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150lC
x25-m
MARKING H140
diode b tu 25 c
JB SMD MARKING
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SG30TC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away
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SG30TC
FTO-220G
J533-1)
SG30TC15M
50IIz
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FSD20A60
Abstract: FSD20A30 H-17 H-18
Text: — » • Ô - t îii-n> IM 315 — < X 9 + fr''( * - K ) • «»na PSD 20A H ttW * o Jiiffiis - ê - 7 'u ■ y $0%$. (Tj = 25’C) ■ *£ * /T(RMS) Itsm 113 r-'t di/di Pgm PC(AV) Vcrm Igfm Tj Tag 180/200 (50Hz/60Hz, I E & « , 1 -i 9 ^ÜfcÜS ) 165 ( 2 —10ms)
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PSD20A
FSD20A30
FSD20A60
125-C,
50Hz/60Hz,
100mA,
H-101
FSD20A60
H-17
H-18
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode • fttK H S60SC4MT O UTLINE U n it I m m Package : MTO-3PT 40V 60A Feature Tj=150°C Tj=150°C 6\c Sm all 6\c High lo Rating Main Use ^ 'v i- y f n M Sw itching Regulator DC/DC n yjK —$ D C /D C Converter Hom e Appliance, Gam e, Office Automation
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S60SC4MT
J533-1)
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SG DIODE MARKING
Abstract: 2KV DIODE diode sg 45
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA
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FTO-220G
50IIz
J533-1)
SG DIODE MARKING
2KV DIODE
diode sg 45
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STS 9015
Abstract: H-17 H-18 H-19
Text: — 300 — -»M y z ? • T M 2 0 0 R Z r-M, -H, -24, -2Hj ±3£/— ^-XR8 AC 2500V • * * £ & ( « « . Tr= -C) i50Hz/60HzIF.£^?£, 1+M 9 [Tj= 125°C, Vb=1/^V7;«,w! f£ iiL ~Tj V Irhm V Idrm V Vtm A Vc.T A Igt A Vcd A?S Igd A'fis dv/dt W In W Rth V
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TM200RZr-M,
ac25oovi
tm200rz-m
tm200rz-h
tm200rz-24
tm200rz-2h
7w25x,
H-101
STS 9015
H-17
H-18
H-19
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S G 10T C 1 5 M Unit : mm Package I FTO-220G Weight J.54g Typ 150 V 10 A 4.5 Feature • Tj=i5(rc • • • • • • 7 J IÆ -J U K • e i R = i5 MA • j r iiìè s b c u c < u • « « M S 2kVßfiE Tj=150°C
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FTO-220G
J533-1
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