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    Toshiba America Electronic Components TJ150F06M3L

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    Win Source Electronics TJ150F06M3L 9,100
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    TJ150F06M3L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TJ150F06M3L Toshiba Transistors - Mosfets Original PDF
    TJ150F06M3L Toshiba Japanese - Transistors - Mosfets Original PDF
    TJ150F06M3L Toshiba TJ150F06 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF

    TJ150F06M3L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Relay Drivers • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ150F06M3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Relay Drivers • Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ150F06M3L O-220SM

    TJ150F06M3L

    Abstract: No abstract text available
    Text: TJ150F06M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ150F06M3L 1. 用途 • リレードライブ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 4.3 mΩ (標準) (VGS = -10 V) (2) 漏れ電流が低い。: IDSS = -10 µA (最大) (VDS = -60 V)


    Original     		PDF TJ150F06M3L O-220SM TJ150F06M3L

    Untitled

    Abstract: No abstract text available
    Text: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Relay Drivers • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ150F06M3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ150F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F06M3L 1. Applications • Automotive • Relay Drivers • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ150F06M3L AEC-Q101 O-220SM

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TB2926

    Abstract: tc94a92fg TC94A93MFG TC90105FG TB2915 TC90104FG tc94A96mfg TB9061FNG TC94A93 tb2929
    Text: システムカタログ 2010-3 システムカタログ 車載ソリューション h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 情報・エンターテインメント Information & Entertainment クルマの未来を変える東芝の先進半導体テクノロジー


    Original     		PDF SCJ0023E SCJ0023D TB2926 tc94a92fg TC94A93MFG TC90105FG TB2915 TC90104FG tc94A96mfg TB9061FNG TC94A93 tb2929