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    TK31 Search Results

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    TK31 Price and Stock

    NXP Semiconductors TJA1051TK-3,118

    IC TRANSCEIVER HALF 1/1 8HVSON
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    DigiKey TJA1051TK-3,118 Digi-Reel 73,021 1
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    TJA1051TK-3,118 Cut Tape 73,021 1
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    TJA1051TK-3,118 Reel 73,021 6,000
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    NXP Semiconductors TJA1051TK-3-1J

    IC TRANSCEIVER HALF 1/1 8HVSON
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    DigiKey TJA1051TK-3-1J Digi-Reel 25,966 1
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    TJA1051TK-3-1J Cut Tape 25,966 1
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    TJA1051TK-3-1J Reel 24,000 6,000
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    Toshiba America Electronic Components TK31V60X,LQ

    MOSFET N-CH 600V 30.8A 4DFN
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    DigiKey TK31V60X,LQ Reel 20,000 2,500
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    Mouser Electronics TK31V60X,LQ 1,958
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    TTI TK31V60X,LQ Reel 7,500 2,500
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    NXP Semiconductors TJA1042TK-3-1J

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    DigiKey TJA1042TK-3-1J Reel 12,000 6,000
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    C&K PTS641TK31SMTR2LFS

    SWITCH TACTILE SPST-NO 0.05A 12V
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    DigiKey PTS641TK31SMTR2LFS Cut Tape 11,895 1
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    Newark PTS641TK31SMTR2LFS Bulk 9,000 1,500
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    IBS Electronics PTS641TK31SMTR2LFS 9,000 4,691
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    TK31 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK31 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK31 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TK310 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3100 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3120 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3140 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3160 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK31A60W Toshiba TK31A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK31A60W Toshiba Transistors - Mosfets Original PDF
    TK31A60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK31A60W,S4VX Toshiba TK31A60 - Power MOSFET - Nch 500V VDSS 700V Original PDF
    TK31C Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TK31D Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK31E60W Toshiba TK31E60W - Nch 500V Original PDF
    TK31E60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK31E60W Toshiba Transistors - Mosfets Original PDF
    TK31E60W,S1VX Toshiba TK31E60 - Power MOSFET - Nch 500V VDSS 700V Original PDF
    TK31E60X,S1X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V TO-220 Original PDF
    TK31J60W Toshiba TK31J60W - Nch 500V Original PDF
    TK31J60W Toshiba Japanese - Transistors - Mosfets Original PDF

    TK31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


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    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFET シリコンNチャネルMOS形 DTMOS TK31A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31A60W O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。 : trr = 135 ns (typ.) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.082 Ω (標準)


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31A60W O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31N60X MOSFETs Silicon N-Channel MOS DTMOS TK31N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.


    Original
    PDF TK31N60X O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31J60W

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31E60X MOSFETs Silicon N-Channel MOS DTMOS-H TK31E60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.


    Original
    PDF TK31E60X O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W MOSFET シリコンNチャネルMOS形 DTMOS TK31N60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31E60W O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31E60W O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31J60W

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31A60W O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFET シリコンNチャネルMOS形 DTMOS TK31E60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31E60W O-220

    TK31

    Abstract: Toggle Switches 3A120VAC T6N 600
    Text: Toggle Switches Sub-Miniature SPDT Toggle Switches TK31 Series Toggle Switches EPOXY SEAL 5.59 0.51 4.06 Ø2.54 EPOXY SEAL 4.93 2.54 0.51 1.52 4.01 8.64 9.40 5.08 0.76 3.30 0.76 0.41 2.80 5.59 8.13 5.08 Ø6.00 FLAT 2.54 4.39 8.13 5.08 TK31S6 Omit second terminal


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    PDF TK31S6 TK31S1A1B1T1_ TK31S1A2B2T6_ TK31S1A2B2T7_ TK31 Toggle Switches 3A120VAC T6N 600

    Untitled

    Abstract: No abstract text available
    Text: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31V60W

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31J60W

    Untitled

    Abstract: No abstract text available
    Text: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31V60W

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31E60W O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original
    PDF TK31N60W5 O-247